2011-07-13
Rev 1.4 Page 1
BSS84PW
SIPMOS Small-Signal-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
Logic Level
·
d
v
/d
t
rated
Product Summary
Drain source voltage
V
DS -60 V
Drain-source on-state resistance
R
DS(on) 8
W
Continuous drain current
I
D-0.15 A
1
3
VSO05561
2
Pin 1 PIN 2
PIN 3
G S D
Type Package
Tape and Reel
BSS84PW
PG-SOT-323
L6327:3000pcs/r.
Marking
YBs
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Value Unit
Continuous drain current
T
A
= 25 °C
I
D
-0.15 A
Pulsed drain current
T
A
= 25 °C
I
D puls
-0.6
Avalanche energy, single pulse
I
D
= -0.15 A ,
V
DD
= -25 V,
R
GS
= 25
W
E
AS
2.61 mJ
Avalanche energy, periodic limited by
T
jmax
E
AR
0.03
Reverse diode d
v
/d
t
I
S
= -0.15 A,
V
DS
= -48 V, d
i
/d
t
= 200 A/µs,
T
jmax
= 150 °C
d
v
/d
t
6
kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
T
A
= 25 °C
P
tot
0.3
W
Operating and storage temperature
T
j ,
T
stg
-55...+150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
2011-07-13
Rev 1.4 Page 2
BSS84PW
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
R
thJS - - 110 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
420
350
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS = 0 V,
I
D = -250 µA
V
(BR)DSS -60 - - V
Gate threshold voltage,
V
GS =
V
DS
I
D = -20 µA
V
GS(th) -1 -1.5 -2
Zero gate voltage drain current
V
DS = -60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -60 V,
V
GS = 0 V,
T
j = 125 °C
I
DSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V
I
GSS - -10 -100 nA
Drain-source on-state resistance
V
GS = -2.7 V,
I
D = -0.01 A
R
DS(on) - 10.5 25
W
Drain-source on-state resistance
V
GS = -4.5 V,
I
D = -0.12 A
R
DS(on) - 6.9 12
Drain-source on-state resistance
V
GS = -10 V,
I
D = -0.15 A
R
DS(on) - 4.6 8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2011-07-13
Rev 1.4 Page 3
BSS84PW
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
£
2*
I
D*
R
DS(on)max ,
I
D=0.15A
0.08 0.16 - S
Input capacitance
C
iss
V
GS=0V,
V
DS=-25V,
f
=1MHz
- 15.3 19.1 pF
Output capacitance
C
oss - 5.8 7.3
Reverse transfer capacitance
C
rss - 3 3.8
Turn-on delay time
t
d(on)
V
DD=-30V,
V
GS=-4.5V,
I
D=-0.12A,
R
G=25
W
- 6.7 10 ns
Rise time
t
r- 16.2 24.3
Turn-off delay time
t
d(off) - 8.6 12.9
Fall time
t
f- 20.5 30.8
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD=-48V,
I
D=-0.15A - 0.25 0.38 nC
Gate to drain charge
Q
gd - 0.3 0.45
Gate charge total
Q
gV
DD=-48V,
I
D=-0.15A,
V
GS=0 to -10V
- 1 1.5
Gate plateau voltage
V
(plateau)
V
DD=-48V,
I
D=-0.15A - -3.4 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A=25°C - - -0.15 A
Inverse diode direct current,
pulsed
I
SM - - -0.6
Inverse diode forward voltage
V
SD
V
GS=0V,
I
F=-0.15A - -0.84 -1.12 V
Reverse recovery time
t
rr
V
R=-30V,
I
F=
l
S,
d
i
F/d
t
=100A/µs
- 23.6 35.4 ns
Reverse recovery charge
Q
rr - 11.6 17.4 nC
2011-07-13
Rev 1.4 Page 4
BSS84PW
Power Dissipation
P
tot =
f
(
T
A)
0 20 40 60 80 100 120 °C 160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
W
0.32 BSS84PW
P
tot
Drain current
I
D =
f
(
T
A)
parameter:
V
GS
³
10 V
0 20 40 60 80 100 120 °C 160
T
A
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
A
-0.16 BSS84PW
I
D
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 °C
-10 -1 -10 0 -10 1 -10 2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS84PW
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 40.0µs
Transient thermal impedance
Z
thJA =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3
s
t
p
0
10
1
10
2
10
3
10
K/W
BSS84PW
Z
thJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2011-07-13
Rev 1.4 Page 5
BSS84PW
Typ. output characteristic
I
D =
f
(
V
DS);
T
j=25°C
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0
V
DS
0.00
-0.04
-0.08
-0.12
-0.16
-0.20
-0.24
-0.28
A
-0.36 BSS84PW
I
D
V
GS [V]
a
a -2.5
b
b -3.0
c
c -3.5
dd -4.0
e
e -4.5
f
f -5.0
g
P
tot = 0W
g -6.0
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A-0.30
I
D
0
2
4
6
8
10
12
14
16
18
20
22
W
26 BSS84PW
R
DS(on)
V
GS [V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-6.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS
³
2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0
V
GS
0.00
-0.05
-0.10
-0.15
-0.20
A
-0.30
I
D
Typ. forward transconductance
g
fs = f(
I
D);
T
j=25°C
parameter:
g
fs
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
S
0.22
g
fs
2011-07-13
Rev 1.4 Page 6
BSS84PW
Drain-source on-resistance
R
DS(on) = f(
T
j)
parameter:
I
D = -0.17A,
V
GS = -10 V
-60 -20 20 60 100 °C 160
T
j
0
2
4
6
8
10
12
W
16
R
DS(on)
max.
typ.
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = -20 µA
-60 -20 20 60 100 °C 180
T
j
0.0
-0.5
-1.0
-1.5
V
-2.5
V
GS(th)
max.
min.
typ.
Typ. capacitances
C = f(VDS)
Parameter:
V
GS=0 V,
f
=1 MHz
0 -5 -10 -15 -20 V -30
V
DS
0
10
1
10
2
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
-3
-10
-2
-10
-1
-10
0
-10
A
BSS84PW
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
2011-07-13
Rev 1.4 Page 7
BSS84PW
Avalanche energy
E
AS =
f
(
T
j)
par.:
I
D = -0.15 A ,
V
DD = -25 V,
R
GS = 25
W
25 45 65 85 105 125 °C 165
T
j
0.0
0.5
1.0
1.5
2.0
mJ
3.0
E
AS
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = -0.15 A pulsed
0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16 BSS84PW
V
GS
0,8
V
DS max
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
f
(
T
j)
-60 -20 20 60 100 °C 180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72 BSS84PW
V
(BR)DSS
Published by
Infineon Technologi es AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rig hts Rese rved.
Legal Disclaimer
The information giv e n in this doc ume nt s hall in no event be rega r d ed as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated her e in and/or any inf o r mation r e garding the application of the device,
Infineo n Technolo g ies hereby dis claims any and all war r anties and liabilities o f any k ind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and pr ices, please
contact the nearest Infineon Techn ologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Of f ice.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or p r o tec t human life . I f they fail, it is reas onable to assume that the health of the user
or other persons may be endangered.
2011-07-13
Rev 1.4 Page 3
BSS84PW
