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Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C50A
IDM TC= 25°C, pulse width limited by TJM 200 A
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
MegaMOSTMFET
N-Channel Enhancement Mode
TO-204 AE (IXTM)
G = Gate, D = Drain,
S = Source, TAB = Drain
DG
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 200 V
VGS(th) VDS = VGS, ID = 250 µA24V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 0.045 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
l
International standard packages
l
Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
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Fast switching times
Applications
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Switch-mode and resonant-mode
power supplies
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Motor controls
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Uninterruptible Power Supplies (UPS)
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DC choppers
Advantages
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Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
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Space savings
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High power density
91534F(5/97)
D (TAB)
IXTH 50N20 VDSS = 200 V
IXTM 50N20 ID25 = 50 A
RDS(on) = 45 mΩΩ
ΩΩ
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
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IXTH 50N20
IXTM 50N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 2 0 3 2 S
Ciss 4600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 8 00 p F
Crss 285 pF
td(on) 18 25 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 15 20 ns
td(off) RG = 2 Ω, (External) 7 2 9 0 ns
tf16 25 ns
Qg(on) 190 220 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 35 50 nC
Qgd 95 110 nC
RthJC 0.42 K/W
RthCK 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 50N20 50 A
ISM Repetitive; 200 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, 1. 5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 4 00 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD (IXTH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 1.53 3.42 .060 .135
∅b 1.45 1.60 .057 .063
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 11.18 12.19 .440 .480
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 12.58 13.33 .495 .525
R1 3.33 4.77 .131 .188
s 16.64 17.14 .655 .675
TO-204AE (IXTM) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Pins 1 - Gate 2 - Source
Case - Drain
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- No rmalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 VGS(th)
BVCES
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
10
20
30
40
50
60
70
80
42N20
50N20
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Norma lized
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 25 50 75 100 125 150 175 200
R
DS(on)
- mO h ms
25
50
75
100
125
VGS - V o lts
012345678910
I
D
- Amperes
0
10
20
30
40
50
60
70
80
90
100
VDS - V o lts
012345678910
I
D
- Amperes
0
10
20
30
40
50
60
70
80
90
100
6V
5V
TJ = 25°CVGS = 10V
9V
8V
7V
TJ = 25°C
TJ = 25°C
VGS = 15V
VGS = 10V ID = 40A
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
IXTH 50N20
IXTM 50N20
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© 2000 IXYS All rights reserved
IXTH 50N20
IXTM 50N20
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
TJ = 25°C
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
V
GE
- Volts
0
2
4
6
8
10
12
14
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
VDS - Vo l t s
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500 Ciss
Coss
Crss
10ms
100ms
VDS - V o lts
1 10 100
I
D
- Amperes
1
10
100
VSD - Volts
0.20.40.60.81.0
I
D
- Amperes
0
10
20
30
40
50
VDS = 100V
ID = 50A
IG = 10mA Limited by RDS(on)
10µs
100µs
1ms
f = 1 MHz
VDS = 25V
TJ = 125°C
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Single pulse
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