2SA1428 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428 Power Amplifier Applications Power Switching Applications Unit: mm * Low collector-emitter saturation voltage: VCE (sat) = -0.5 V (max) * High-speed switching: tstg = 1.0 s (typ.) * Complementary to 2SC3668 (IC = -1 A) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -2 A Base current IB -0.2 A Collector power dissipation PC 900 mW Junction temperature Tj 150 C Tstg -55 to 150 C Collector current Storage temperature range 1 JEDEC JEITA TOSHIBA 2-7D101A Weight: 0.2 g (typ.) 2004-07-07 2SA1428 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 -1.0 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 -1.0 A V (BR) CEO IC = -10 mA, IB = 0 -50 V VCE = -2 V, IC = -0.5 A 70 240 hFE (2) VCE = -2 V, IB = -1.5 A 40 Collector-emitter saturation voltage VCE (sat) IC = -1 A, IB = -0.05 A -0.5 V Base-emitter saturation voltage VBE (sat) IC = -1 A, IB = -0.05 A -1.2 V VCE = -2 V, IC = -0.5 A 100 MHz VCB = -10 V, IE = 0, f = 1 MHz 40 pF 0.1 1.0 0.1 hFE (1) DC current gain (Note) Transition frequency fT Collector output capacitance Cob Turn-on time ton Storage time tstg IB1 Switching time Input IB2 20 s IB1 IB2 Output 30 Collector-emitter breakdown voltage s VCC = -30 V Fall time tf -IB1 = IB2 = 0.05 A, duty cycle 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking A1428 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1428 VCE - IC Ta = 25C IB = -5 mA VCE -0.8 (V) Common emitter -1.0 -10 -20 -40 -80 Collector-emitter voltage Collector-emitter voltage VCE (V) VCE - IC -120 -0.6 -160 -0.4 -200 -0.2 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -0.8 Ta = 100C -20 IB = -5 mA -30 -40 -60 -120 -160 -180 -0.4 -200 -0.2 -0.4 -0.8 Collector current IC (A) -1.2 -1.6 VCE - IC -2.8 hFE - IC Common emitter 500 IB = -10 mA -20 -30 -40 hFE Ta = -55C -60 DC current gain (V) VCE Collector-emitter voltage -2.4 1000 Common emitter -80 -0.6 -120 -160 -0.4 -200 -0.2 0 0 -2.0 Collector current IC (A) -1.0 -0.8 -80 -0.6 0 0 -2.8 Common emitter -1.0 300 VCE = -2 V Ta = 100C 25 100 -55 50 30 10 -0.005 -0.01 -0.03 -0.1 -0.3 -3 -1 Collector current IC (A) -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector current IC (A) VCE (sat) - IC VBE (sat) - IC -10 Common emitter -0.5 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) -1 IC/IB = 20 -0.3 -0.1 Ta = 100C -0.05 -0.01 -0.005 -0.01 -55 25 -0.03 -0.03 -0.1 -0.3 -1 Common emitter -5 IC/IB = 20 -3 Ta = -55C -1 -0.5 -0.3 100 -0.1 -0.005 -0.01 -3 Collector current IC (A) 25 -0.03 -0.1 -0.3 -1 -3 Collector current IC (A) 3 2004-07-07 2SA1428 IC - VBE PC - Ta -2.0 1.2 (W) Common emitter -1.0 Ta = 100C 25 -0.5 0 0 1.0 PC Collector power dissipation Collector current IC (A) VCE = -2 V -1.5 -0.4 -55 -0.8 -1.2 Base-emitter voltage -1.6 VBE 0.8 0.6 0.4 0.2 0 0 -2.0 (V) 20 40 60 80 100 Ambient temperature Ta 120 140 160 (C) Safe Operating Area -10 -5 I max (pulsed) C 10 ms* Collector current IC (A) -3 -1 t = 1 ms* IC max (continuous) 100 ms* -0.5 -0.3 DC operation Ta = 25C -0.1 -0.05 -0.03 *: Single nonrepetitive pulse -0.01 Ta = 25C Curves must be derated linearly -0.005 with increase in temperature. -0.003 -0.1 -1 -0.3 -0.03 -3 Collector-emitter voltage -10 VCE -30 -100 (V) 4 2004-07-07 2SA1428 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07