SB120, SB130, SB140, SB150, SB160
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-13 1Document Number: 88715
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Schottky Barrier Plastic Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 20 V, 30 V, 40 V, 50 V, 60 V
IFSM 50 A
VF0.48 V, 0.65 V
TJ max. 125 °C, 150 °C
Package DO-204AL
Diode variations Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SB120 SB130 SB140 SB150 SB160 UNIT
Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V
Maximum RMS voltage VRMS 14 21 28 35 42 V
Maximum DC blocking voltage VDC 20 30 40 50 60 V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1) IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 50 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction temperature range TJ- 65 to + 125 - 65 to + 150 °C
Storage temperature range TSTG - 65 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL SB120 SB130 SB140 SB150 SB160 UNIT
Maximum instantaneous
forward voltage 1.0 A VF (1) 0.48 0.65 V
Maximum instantaneous reverse
current at rated DC blocking voltage
TA = 25 °C IR (1) 0.50 mA
TA = 100 °C 10 5.0