BAT54WS
Vishay Semiconductor
Document Number 88144 www.vishay.com
03-Jan-02 1
New Product
Schottky Diode
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Forward Continuous Current at Tamb = 25°CI
F200(1) mA
Repetitive Peak Forward Current at Tamb = 25°CI
FRM 300(1) mA
Surge Forward Current at tp < 1 s, Tamb = 25°CI
FSM 600(1) mA
Power Dissipation at Tamb = 25°CP
tot 150(1) mW
Ther mal Resistance Junction to Ambient Air RθJA 650(1) °C/W
Maximum Junction Temperature Tj125 °C
Storage Temperature Range TS–65 to +150 °C
.006 (0.15)
max.
.010 (0.25)
min.
.012 (0.3)
.076 (1.95)
.112 (2.85)
.059 (1.5)
.004 (0.1)
max.
.049 (1.25)
max.
Cathode Band
Top View
.100 (2.55)
.065 (1.65)
.043 (1.1)
Features
• These diodes feature very low tur n-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
Mechanical Data
Case: SOD-323 Plastic Package
Weight: approx. 0.004 grams
Marking Code: L4
Packaging Codes/Options:
D5/10K per 13”reel (8mm tape), 30K/box
D6/3K per 7”reel (8mm tape), 30K/box
SOD-323
Mounting Pad Layout
0.055
(1.40) 0.062
(1.60)
0.047 (1.20)
Dimensions in inches
and (millimeters)
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 100µA pulses 30 ——V
Pulse Test tp< 300µs
Leakage Current(2) IRδ< 2% —— 2µA
at VR= 25V
IF = 0.1mA ——240
IF = 1mA ——320 mV
F orward Voltage(2) VFIF = 10mA ——400
IF = 30mA ——500
IF= 100mA ——1000
Capacitance Ctot VF= 1V, f = 1MHz ——10 pF
Reverse Recover y Time trr IF= 10mA, IR = 10mA —— 5ns
Irr = 1mA, RL= 100Ω
Notes: (1) Valid provided that electrodes are kept at ambient temperature
(2) Pulse test: tp < 300µs,δ< 2%