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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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MMBT2222AT — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 1
September 2008
MMBT2222AT
NPN Epitaxial Silicon Tr ansistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
•General purpose switching & amplification application
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise note d
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 600 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Max Unit
PCCollector Power Dissipation, by RθJA 250 mW
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 75 V
BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V
BVEBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 V
ICEX Collector Cut-off Current VCE = 60V, VEB(OFF) = 3V 10 nA
hFE DC Current Gain VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
35
50
75
100
VCE (sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.3
1.0 V
V
VBE (sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.6 1.2
2.0 V
V
fTCurrent Gain Bandwidth Product VCE = 20V, IC = 20mA, f = 100MHz 300 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8pF
Cib Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 30 pF
tdDelay Time VCC = 30V, IC = 150mA
IB1 =- IB2 = 15mA 10 ns
trRise Time 25 ns
tsStorage Time 225 ns
tfFall Time 60 ns
SOT-523F
Marking : A02
B
C
E
MMBT2222AT — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 2
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation voltage
Figure 5. Collector- Base Leakage Current Figure 6. Collector-Base Capapcitance
1 10 100 1000
10
100
Vce=10V
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Current Gain
Collector Current, [mA] 1 10 100 1000
100
Vce=5V
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Current Gain
Collector Current, [mA]
10 100
10
100
1000 Ic=10*Ib
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Collector-Emitter Voltage,[mV]
Collector Cu rren t, [mA ] 10 100
100
1000
Ic=10*Ib
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base- Emitter V oltage,[mV ]
Collector Current, [mA]
10 20 30 40 50 60 70
1
10
100
1000
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base-Collector Leakage Current,[nA]
Base-Collector Revere Voltage, [V]
0510
5
8
10
13
15
f=1mhz
Base- Collector Juntion Capacitance, Cob[pF]
Base- Collector Reverse Voltage, Vcb[V]
MMBT2222AT — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 3
Typical Performance Characteristics
Figure 7. Power Derating
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Power Dissipation, [mW]
Ambient Tempe rature, Ta[oC]
MMBT2222AT — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 4
Package Dimensions
SOT-523F
• Case : SOT-523F
• Case Material(Molded Plastic): KTMC1060SC
• UL Flammability classification rating : “V0”
• Moisture Sensitivity level per JESD22-A1113B : MSL 1
• Lead terminals solderable per MIL-STD7502026 /JESD22A121
• Lead Free Plating : Pure Tin(Matte)
Dimensions in Millimeters
MMBT2222AT NPN Epitaxial Silicon TransistorMMBT2222AT
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222AT Rev. 1.0.0 5
Rev. I31
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The following are re giste re d and un re gis tere d t radem ar ks an d s ervic e ma rks Fair child Sem i condu ct o r owns or is autho rized to use and
is not intended to be an exhaustive list of all such tradema rks.
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FAIRCHILD SEMICOND UCTOR RESERVES THE RIGHT TO MAKE CHA NGES WITHOUT FURTHER NOTICE TO ANY PRODUC TS
HEREIN TO IMPROV E RELIABILITY, FUNCTIO N, OR DESIGN. FAIRCHILD DO ES NOT ASSUME ANY LIABILIT Y ARISING OUT O F
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
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PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasona bly expected to result
in significant injury to the us er .
2. A critical component is any component of a life support
device or s ystem whose failure t o perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Build it Now™
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Current Transfer Logic™
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Fairchild®
Fairchild Semiconductor®
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®
PDP-SPM™
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QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
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SyncFET™
The Power Franchise®
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Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary dat a will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This dat asheet contains final specifications . Fairchild Semicond uctor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semic onductor. The datasheet is printed for reference infor-
mation only.
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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