1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
38 01.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BCW 60 General Purpose Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BCW 60
Collector-Emitter-voltage B open VCE0 32 V
Collector-Base-voltage E open VCB0 32 V
Emitter-Base-voltage C open VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (DC) IC100 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 32 V ICB0 – – 20 nA
IE = 0, VCB = 32 V, Tj = 150/CI
CB0 – – 20 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 4 V IEB0 – – 20 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 10 mA, IB = 0.25 mA VCEsat 50 mV 350 mV
IC = 50 mA, IB = 1.25 mA VCEsat 100 mV 550 mV
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
39
01.11.2003
General Purpose Transistors BCW 60
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.25 mA VBEsat 600 mV – 850 mV
IC = 50 mA, IB = 1.25 mA VBEsat 700 mV – 1050 mV
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 5 V, IC = 10 :A
BCW 60B hFE 20 – –
BCW 60C hFE 40 – –
BCW 60D hFE 100 – –
VCE = 5 V, IC = 2 mA
BCW 60B hFE 180 – 310
BCW 60C hFE 250 – 460
BCW 60D hFE 380 – 630
VCE = 1 V, IC = 50 mA
BCW 60B hFE 70 – –
BCW 60C hFE 90 – –
BCW 60D hFE 100 – –
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 10 :AV
BEon – 520 mV –
VCE = 5 V, IC = 2 mA VBEon 550 mV 650 mV 700 mV
VCE = 1 V, IC = 50 mA VBEon – 780 mV –
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz fT100 MHz 250 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 1.7 pF –
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 11 pF –
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz F – 2 dB 6 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BCW 61 series
Marking – Stempelung BCW 60B = AB BCW 60C = AC BCW 60D = AD
