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FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 1
January 2014
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General-Purpose Amplifier
Block Diagram
Figure 1. FFB2907A Device Package Figure 2. FFB2907A Internal Connections
Figure 3. FMB2907A Device Package Figure 4. FMB2907A Internal Connections
Figure 5. MMPQ2907A Device Package Figure 6. MMPQ2907A Internal Conn ection s
SC70-6
Mark: .2F
C1
B2
E2
E1
B1
C2
pin #1
E2
B2
C1
C2
B1
E1
SuperSOT™-6
Mark: .2F
Dot denotes pin #1
C1
E1
C2
B1
E2
B2
pin #1
C2
E1
C1
B2
E2
B1
SOIC-16
Mark:
MMPQ2907A
C1C1C2C2C3C3C4
C4
E1 B1 E2 B2E3 B3E4B4
pin #1
B4E4B3E3B2E2B2E1
C4C4C3C3C2C2C1C1
Description
This device is designed for use as a general-purpose
amplifier and switch for collector currents to 500 mA.
Sourced from Process 63.
FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 2
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Part Number Top Mark Package Packing Method
FFB2907A .2F SC70 6L Tape and Reel
FMB2907A .2F SSOT 6L Tape and Reel
MMPQ2907A MMPQ2907A SOIC 16L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -60 V
VCBO Collector-Base Voltage -60 V
VEBO Emitter-Base Voltage -5.0 V
ICCollector Current - Continuous -600 mA
TJ, TSTG Junction and Storage Temperature -55 to +150 °C
Symbol Parameter Max. Unit
FFB2907A FMB2907A MMPQ2907A
PD
Total Device Dissipation 300 700 1,000 mW
Derate Above 25°C2.45.68.0mW/°C
RθJA
Thermal Resistance, Junction to Ambient 415 180
°C/W
Thermal Resistance, Junction to Ambient,
Effective 4 Die 125
Thermal Resistance, Junction to Ambient,
Each Die 240
FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 3
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
V(BR)CEO
Collector-Emitter Breakdown
Voltage(4) IC = -10 mA, IB = 0 -60 V
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V
IBL Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA
ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA
ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -0.02 μA
VCB = -50 V, IE = 0, TA = 125°C-20
hFE DC Current Gain
IC = -0.1 mA, VCE = -10 V 75
IC = -1.0 mA, VCE = -10 V 100
IC = -10 mA, VCE = -10 V 100
IC = -150 mA, VCE = -10 V(4) 100 300
IC = -500 mA, VCE = -10 V(4) 50
VCE(sat) Collector-Emitter Saturation
Voltage(4)
IC = -150 mA, IB = -15 mA -0.4 V
IC = -500 mA, IB = -50 mA -1.6
VBE(sat) Base-Emitter Saturation Voltage IC = -150 mA, IB = -15 mA(4) -1.3 V
IC = -500 mA, IB = -50 mA -2.6
fTCurrent Gain-Bandwidth Product IC = -50 mA, VCE =- 20 V,
f = 100 MHz 250 MHz
Cob Output Capacitance VCB = -10 V, IE = 0, f = 100 kHz 6.0 pF
Cib Input Capacitance VEB = -2.0 V, IC = 0, f = 100 kHz 12 pF
ton Turn-On Time
VCC = -30 V, IC = -150 mA,
IB1 = -15 mA
30 ns
tdDelay Time 8 ns
trRise Time 20 ns
toff Turn-Off Time
VCC = -6.0 V, IC = -150 mA,
IB1 = IB2 = -15 mA
80 ns
tsStorage Time 60 ns
tfFall Time 20 ns
FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 4
Typical Performance Characteristics
Figure 7. Typical Pulsed Current Gain vs.
Collector Current Figure 8. Colle ctor-Emitter Saturation Voltage vs.
Collector Current
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current Figure 10. Base-Emitter On Voltage vs.
Collector Current
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature Figure 12. Input and Output Capacitance vs.
Revers e B ia s Voltage
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
110100500
0
0. 1
0. 2
0. 3
0. 4
0. 5
I - COLLECTOR CURRE NT (mA)
V - COLLECTOR EMITTE R VOLTAGE (V)
C
CESAT
β= 10
25 °C
- 40 °C
125 °C
110100500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β= 10
0.1 1 10 25
0
0. 2
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE( ON)
V = 5V
CE
25 °C
- 40 °C
125 °C
25 50 75 100 125
0.01
0.1
1
10
10 0
T - A MBI E NT T EMP ER AT UR E ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 35V
CB
0.1 1 10 50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cob
C
ib
FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 5
Typical Performance Characteristics (Continued)
Figure 13. Switching Times vs. Collector Cur rent Figure 14. Turn -On and Turn- Off Time s vs.
Collector Current
Figure 15. Rise Time vs.
Collecto r an d Turn-On Base Current Figure 16. Power Dissipation vs.
Ambient Temperature
10 100 1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2
Ic
10
V = 15 V
cc
tf
td
10 100 1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2
I
c
10
V = 15 V
cc
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I - TURN 0N BASE CURRENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
0 25 50 75 100 125 150
0
0.2 5
0.5
0.7 5
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
°
D
SOIC-16
SOT-6
SC70-6
FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 6
Typical Performance Characteristics (f = 1.0 kHz)
Figure 17. Common Emitter Characteristics Figure 18. Common Emitter Characteristics
Figure 19. Common Emitter Characteristics
12 51020 50
0.1
0.2
0.5
1
2
5
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = -10mA
V = -10 V
CE
C
C
T = 25 C
A o
hoe
hre
hfe
hie
_ _ _ _ _ _
-20-16-12-8-4
0.8
0.9
1
1.1
1.2
1.3
V - COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT V = -10V
I = -10mA
C
CE
CE
T = 25 C
A o
hoe
h and h
re
hfe
h ie
oe hfe
hie
hre
-40 -20 0 20 40 60 80 100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AMBIENT TEMPERATURE ( C)
CHAR. RELATIVE TO VALUES AT T = 25 C
V = -10 V
CE
A
A
hoe
hre
hfe
h ie
o
o
I = -10mA
C hfe
h ie
hre
hoe
FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 7
Physical Dimensions
Figure 20. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MAA06A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MAA06A.pdf.
SCALE: 60X
B
1.90
2.00
±0.20
0.50 MIN
1.00
0.80
1.10
0.80
0.10 C
0.25
0.10
0.46
0.26
0.20
GAGE
PLANE (R0.10)
30°
0°
SEATING
PLANE
C0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-88, 1996.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH.
D) DRAWING FILENAME: MKT-MAA06AREV6
2.10±0.30
0.10 A B
0.65
1.30
(0.25) 0.30
0.15
1
1.25
±0.10
3
1.30
0.40 MIN
SEE DETAIL A
LAND PATTERN RECOMMENDATION
6
A
4
C
0.65
L
SYMM
PIN ONE
FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 8
Physical Dimensions (Continued)
Figure 21. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA06A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf.
FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 9
Physical Dimensions (Continued)
Figure 22. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/M1/M16A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-M16A.pdf.
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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