MIXA60WB1200TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 190 A IC25 = 60 A IC25 = 85 A = 700 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V IFSM Part name (Marking on product) MIXA60WB1200TEH D11 D13 21 D15 22 D7 7 1 2 3 D12 D14 D16 16 D1 18 T1 15 D3 17 T7 11 T2 D2 D5 T5 NTC 8 19 5 6 14 20 T3 12 T4 D4 4 13 D6 T6 9 E 72873 10 23 24 Pin configuration see outlines. Features: Application: Package: * Easy paralleling due to the positive temperature coefficient of the on-state voltage * Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - square RBSOA @ 3x IC - low EMI * Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) * SONICTM diode - fast and soft reverse recovery - low operating forward voltage * AC motor drives * Solar inverter * Medical equipment * Uninterruptible power supply * Air-conditioning systems * Welding equipment * Switched-mode and resonant-mode power supplies * "E3-Pack" standard outline * Insulated copper base plate * Soldering pins for PCB mounting * Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 1-8 MIXA60WB1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 55 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 85 60 A A TC = 25C 290 W 2.1 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C 1.8 2.1 5.4 6.0 6.5 V 0.5 mA mA 500 nA 0.2 QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 50 A 165 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 50 A VGE = 15 V; RG = 15 W TVJ = 125C 70 40 250 100 4.5 5.5 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = 15 V; RG = 15 W; TVJ = 125C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = 15 V; RG = 15 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 125C 150 A 10 s A 0.43 K/W 200 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 60 A; VGE = 0 V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1200 A/s IF = 60 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 25C 1200 V TC = 25C TC = 80C 88 59 A A 2.2 V V TVJ = 25C TVJ = 125C 1.95 1.95 TVJ = 125C 8 60 350 2.5 C A ns mJ 0.6 K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 2-8 MIXA60WB1200TEH Brake T7 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 35 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 1.5 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 60 40 A A TC = 25C 200 W 2.1 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C 1.8 2.1 5.4 6.0 6.5 V 0.5 mA mA 500 nA 0.1 QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 35 A 107 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 35 A VGE = 15 V; RG = 27 W TVJ = 125C 70 40 250 100 3.8 4.1 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = 15 V; RG = 27 W; TVJ = 125C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = 15 V; RG = 27 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 125C 105 A 10 s A 0.64 K/W Ratings typ. max. Unit 140 Brake Chopper D7 Symbol Definitions Conditions min. VRRM max. repetitive reverse voltage TVJ = 25C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 44 29 A A VF forward voltage IF = 30 A; VGE = 0 V TVJ = 25C TVJ = 125C 1.95 1.95 2.2 V V IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 2.0 0.8 mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = 600 A/s IF = 30 A; VGE = 0 V 3.5 30 350 0.9 C A ns mJ RthJC thermal resistance junction to case (per diode) TVJ = 125C 1.2 K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 3-8 MIXA60WB1200TEH Input Rectifier Bridge D11 - D16 TVJ = 25C Ratings typ. max. 1600 Unit V sine 180 rect.; d = 1/3 TC = 80C TC = 80C 70 190 A A max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 700 620 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 1920 2450 A2s A2s Ptot total power dissipation TC = 25C 192 W VF forward voltage IF = 80 A TVJ = 25C TVJ = 125C 1.2 1.2 1.5 V V IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 0.05 1.5 0.1 mA mA RthJC thermal resistance junction to case (per diode) 0.65 K/W min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit C C C 3000 V~ Symbol VRRM Definitions max. repetitive reverse voltage IFAV IDAVM average forward current max. average DC output current IFSM Conditions min. Temperature Sensor NTC Symbol R25 B25/50 Definitions Conditions TC = 25C resistance Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Conditions -40 IISOL < 1 mA; 50/60 Hz - Md mounting torque (M5) 3 dS dA creep distance on surface strike distance through air 6 6 Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink with heatsink compound Weight 6 Nm mm mm 5 mW 0.01 K/W 300 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 R0 Ratings typ. max. 0.85 3.9 Unit V mW TVJ = 150C 1.1 25.1 V mW D1 - D6 TVJ = 150C 1.22 13 V mW IGBT T7 TVJ = 150C 1.1 40 V mW free wheeling diode D7 TVJ = 150C 1.2 27.0 V mW Definitions rectifier diode Conditions D8 - D13 min. TVJ = 150C V0 R0 IGBT T1 - T6 V0 R0 free wheeling diode V0 R0 V0 R0 TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 4-8 MIXA60WB1200TEH Circuit Diagram D11 21 D15 D13 22 D7 7 1 2 3 D12 D14 D16 16 D1 18 T1 15 D3 17 T7 11 T2 D2 D5 T5 NTC 8 19 6 14 20 T3 5 12 T4 D4 4 13 D6 T6 9 10 23 24 Outline Drawing Dimensions in mm (1 mm = 0.0394") Product Marking Part number 2D Data Matrix: FOSS-ID 6 digits Batch # 6 digits M I XA 60 WB 1200 T EH XXXXXXXXXX yywwx Logo UL Part name Date Code Location Ordering Part Name Marking on Product Standard MIXA60WB1200 TEH MIXA60WB1200TEH IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved = Module = IGBT = XPT standard = Current Rating [A] = 6-Pack + 3~ Rectifier Bridge & Brake Unit = Reverse Voltage [V] = NTC = E3-Pack Delivering Mode Base Qty Ordering Code Box 5 507653 20110916e 5-8 MIXA60WB1200TEH Inverter T1 - T6 100 100 VGE = 15 V 80 80 60 TVJ = 25C IC IC TVJ = 125C [A] 40 60 0 1 2 0 3 VCE [V] 9V 0 1 4 15 VGE 10 [V] 40 5 TVJ = 125C 20 TVJ = 25C 5 6 7 8 9 10 11 12 0 13 0 40 80 Fig. 3 Typ. tranfer characteristics 10 Eoff [mJ] 4 5.0 2 60 80 100 120 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 4.0 IC = 50 A VCE = 600 V VGE = 15 V TVJ = 125C Eon 4.5 40 240 Eoff 5.5 E 20 200 6.0 6 0 160 Fig. 4 Typ. turn-on gate charge Eon RG = 15 VCE = 600 V VGE = 15 V TVJ = 125C 8 120 QG [nC] VGE [V] 0 3 IC = 50 A VCE = 600 V IC 60 [mJ] VCE [V] 20 80 E 2 Fig. 2 Typ. output characteristics 100 0 TVJ = 125C 20 Fig. 1 Typ. output characteristics [A] 11 V [A] 40 20 0 13 V VGE = 15 V 17 V 19 V 12 16 20 24 28 32 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance 20110916e 6-8 MIXA60WB1200TEH Inverter D1 - D6 120 14 100 12 TVJ = 125C VR = 600 V 120 A 10 80 IF Qrr 60 [A] 60 A 8 [C] 6 40 30 A TVJ = 125C 4 TVJ = 25C 20 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 600 700 800 900 1000 90 1300 700 TVJ = 125C 80 120 A TVJ = 125C 600 VR = 600 V VR = 600 V 70 [A] 1200 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt Fig. 7 Typ. Forward current versus VF IRR 1100 diF /dt [A/s] VF [V] 500 60 A 60 trr 30 A 50 40 400 120 A 60 A [ns] 300 30 30 A 200 20 100 10 0 600 700 800 900 1000 1100 1200 0 600 1300 700 800 Fig. 9 Typ. peak reverse current IRM vs. di/dt 4.0 900 1000 1100 1300 Fig. 10 Typ. recovery time trr versus di/dt 1 TVJ = 125C Diode 120 A VR = 600 V 3.2 IGBT 60 A Erec 2.4 [mJ] 1200 diF /dt [A/s] diF /dt [A/s] ZthJC 0.1 30 A 1.6 IGBT [K/W] 1 2 3 4 0.8 0.0 600 700 800 900 1000 1100 1200 1300 diF /dt [A/s] Fig. 8 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 0.01 0.001 0.01 0.1 0.05 0.21 0.07 FRD ti Ri ti 0.002 0.03 0.03 0.08 0.137 0.1 0.233 0.13 0.002 0.03 0.03 0.08 Ri 0.1 1 10 tp [s] Fig. 9 Typ. transient thermal impedance 20110916e 7-8 MIXA60WB1200TEH Brake T7 & D7 70 60 VGE = 15 V 60 50 50 IC 40 [A] 30 40 IF TVJ = 25C TVJ = 125C 20 20 TVJ = 125C 10 10 0 30 [A] 0 1 2 TVJ = 25C 0 0.0 3 0.5 1.0 VCE [V] 1.5 2.0 2.5 3.0 VF [V] Fig. 14 Typ. forward characteristics Fig. 13 Typ. output characteristics 10 100000 10000 diode 1 ZthJC IGBT R [] [K/W] Inverter-IGBT 0.1 0.01 0.001 1 2 3 4 0.01 Ri 0.152 0.0724 0.3078 0.1078 Inverter-FRD ti 0.002 0.03 0.03 0.08 0.1 1000 Ri 0.3413 0.2171 0.3475 0.2941 1 ti 0.002 0.03 0.03 0.08 10 100 10 0 25 50 75 100 125 150 tP [s] TC [C] Fig. 15 Typ. transient thermal impedance Fig.16 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 8-8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MIXA60WB1200TEH