2SK3490
No.9085-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Semiconductors
DATA SHEET
82506 MS IM TC-00000128 / 82605PA MS IM TA-100579
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
2SK3490
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID8A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 32 A
Allowable Power Dissipation PDMounted on a ceramic board (600mm2✕0.8mm) 1.5 W
Tc=25°C 3.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=4A 4.8 8 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=4A, VGS=10V 30 39 mΩ
RDS(on)2 ID=2A, VGS=4V 40 56 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 690 pF
Output Capacitance Coss VDS=10V, f=1MHz 160 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 88 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise Time trSee specified Test Circuit. 60 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 27 ns
Fall T ime tfSee specified Test Circuit. 32 ns
Marking : LG Continued on next page.
Ordering number : EN9085A
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK3490
No.9085-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=10V, VGS=10V, ID=8A 16 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=8A 3.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=8A 2.4 nC
Diode Forward Voltage VSD IS=8A, VGS=0V 0.85 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7007A-003
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=4A
RL=3.75Ω
VDD=15V
VOUT
2SK3490
VIN
10V
0V
VIN
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
123
1.5
0.75
Top View
Bottom View
1
2
3
4
5
6
8
7
0 0.2 0
6
5
4
3
2
1
00.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
VGS=2.0V
2.5V
10V
IT06300
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
25°C
--25°C
IT06301
6.0V
3.0V
4.5V
3.5V
4.0V
VDS=10V
Ta=75°C
2SK3490
No.9085-3/4
02468101214161820
80
70
60
50
40
30
20
10
0
4A
ID=2A
0.01
2
2
3
5
7
0.1
2
3
5
7
2
3
5
7
1.0
223 57
0.1 2357
1.00.01 IT10070
IDP=32A
Operation in this
area is limited by RDS(on).
DC operation
100ms
10ms
1ms
ID=8A
10µs
100µs
235 357
10
3
5
7
10
0.01
0.1
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
10
100
1000
7
5
3
2
7
5
3
2
7
5
3
2
1.0
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
IT10069
Drain Current, ID -- A IT10068
23 57
0.1 1.0 23 57
10
0.1
1.0
10
2
3
5
7
7
5
3
2
2
Forward T ransfer Admittance, yfs -- S
y
fs -- ID
IT06305
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
VGS=0V
25°C
Ta=75°C
0 5 10 15 20 25 30
10
100
1000
3
5
2
2
7
7
5
3
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
f=1MHz
IT06307
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT10080
0024681012141618
10
9
8
7
6
5
4
3
2
1
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
23 57
0.01 0.1 1.0
23 57 23 57
10
--25°C
VDS=10V
ID=8A
Ciss
Coss
Crss
Ciss, Coss, Crss -- VDS
--60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT10066 Ambient Temperature, Ta -- °C
RDS(on) -- Ta
IT10067
80
70
60
50
40
30
20
10
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
ID=2A, VGS=4V
ID=4A, VGS=10V
td(on)
td(off)
tr
tf
VDD=15V
VGS=10V
75°C
--25
°
C
Ta=25
°
C
VDS=10V
Tc=25°C
Single pulse
2SK3490
No.9085-4/4
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
PS
Note on usage : Since the 2SK3490 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
0 20 40 60 80 100 120 140 160
0
0.5
1.0
1.5
2.0
IT10071
0 20 40 60 80 100 120 140 160
0
1.0
2.0
3.0
3.5
4.0
IT10072
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
Mounted on a ceramic board (600mm
2
✕0.8mm)
Case Tamperature, Tc -- °C
PD -- Tc
Allowable Power Dissipation, PD -- W
This catalog provides information as of August, 2006. Specifications and information herein are subject
to change without notice.
