10BQ015PbF
Bulletin PD-20782 07/04
2www.irf.com
Part number 10BQ015PbF
VRMax. DC Reverse Voltage (V) 15
VRWM Max. Working Peak Reverse Voltage (V) 25
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.35 V @ 1.0A
* See Fig. 1 0.44 V @ 2.0A
0.32 V @ 1.0A
0.40 V @ 2.0A
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 12 mA TJ = 100 °C
VF(TO) Threshold Voltage - V TJ = TJ max.
rtForward Slope Resistance - mΩ
C TTypical Junction Capacitance 390 pF VR = 5VDC, (test signal range 100KHz to 1MHz) 25°C
L STypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Electrical Specifications
Parameters 10BQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJMax. Junction Temperature Range (*) - 55 to 125 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJL Max. Thermal Resistance 36 °C/W DC operation (See Fig. 4)
Junction to Lead (**)
RthJA Max. Thermal Resistance 80 °C/W DC operation
Junction to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar to DO-214AA
Device Marking IR1C
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
(**) Mounted 1 inch square PCB
Absolute Maximum Ratings
IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 84 °C, rectangular wave form.
* See Fig. 5
IFSM Max. Peak One Cycle Non-Repetitive 140 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 7 40 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 1A, L = 2mH
IAR Repetitive Avalanche Current 1.0 A Current decayng linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Parameters 10BQ Units Conditions
AFollowing any rated
load condition and
with rated VRRM applied
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)