VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 Doc. No. 5SYA 1600-02 04-2012 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VCES VGE = 0 V 6500 V IC Tc = 85 C 750 A Peak collector current ICM tp = 1 ms, Tc = 85 C 1500 A Gate-emitter voltage VGES DC forward current Peak forward current Surge current Ptot -20 Tc = 25 C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 4400 V, VCEM CHIP 6500 V VGE 15 V, Tvj 125 C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature 20 V 9500 W 750 A 1500 A 8000 A 10 s 10200 V 125 C Tvj(op) -50 125 C Case temperature Tc -50 125 C Storage temperature Tstg -50 125 C Mounting torques 2) min DC collector current Total power dissipation 1) Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 0750G650300 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 6500 Collector-emitter 4) saturation voltage VCE sat IC = 750 A, VGE = 15 V typ max Unit V Tvj = 25 C 2.9 Tvj = 125 C 3.9 Tvj = 25 C V 4.5 V 12 mA 100 mA Collector cut-off current ICES VCE = 6500 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C -500 500 nA VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 C 5.5 7.5 V Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) tf Eon Eoff ISC L Tvj = 125 C 60 IC = 750 A, VCE = 3600 V, VGE = -15 V .. 15 V 7.4 113 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 6.6 nF 2.0 VCC = 3600 V, IC = 750 A, RG = 2.7 , CGE = 220 nF, VGE = 15 V, L = 280 nH, inductive load Tvj = 25 C 1060 Tvj = 125 C 980 Tvj = 25 C 260 Tvj = 125 C 300 Tvj = 25 C 4950 Tvj = 125 C 5520 Tvj = 25 C 610 Tvj = 125 C 590 VCC = 3600 V, IC = 750 A, RG = 2.7 , CGE = 220 nF, VGE = 15 V, L = 280 nH, inductive load Tvj = 25 C 4700 Tvj = 125 C 6400 VCC = 3600 V, IC = 750 A, RG = 15 , CGE = 220 nF, VGE = 15 V, L = 280 nH, inductive load Tvj = 25 C 4200 Tvj = 125 C 5300 VCC = 3600 V, IC = 750 A, RG = 15 , CGE = 220 nF, VGE = 15 V, L = 280 nH, inductive load ns ns ns ns mJ mJ tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 4400 V, VCEM CHIP 6500 V CE RCC'+EE' C 3400 A 18 nH TC = 25 C 0.07 TC = 125 C 0.1 Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1600-02 04-2012 page 2 of 9 5SNA 0750G650300 Diode characteristic values Parameter Forward voltage 5) Symbol VF 6) Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 6) min IF = 750 A Irr Recovered charge 5) Conditions VCC = 3600 V, IF = 750 A, VGE = 15 V, RG = 2.7 , CGE = 220 nF, L = 280 nH inductive load Erec typ max Tvj = 25 C 3.2 3.8 Tvj = 125 C 3.4 4.0 Tvj = 25 C 860 Tvj = 125 C 930 Tvj = 25 C 920 Tvj = 125 C 1500 Tvj = 25 C 2100 Tvj = 125 C 3200 Tvj = 25 C 1400 Tvj = 125 C 2700 Unit V A C ns mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.011 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.021 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) min max Unit grease = 1W/m x K 0.009 K/W Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.018 K/W Ve Comparative tracking index CTI f = 50 Hz, QPD 10pC (acc. to IEC 61287) 5100 V 600 For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions 7) Symbol x L W x Conditions H Typical , see outline drawing min typ x max x 190 140 48 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 40 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 64 Mass m 7) typ Rth(c-s)IGBT IGBT per switch, Partial discharge extinction voltage 2) Conditions Unit mm mm 26 mm 56 1760 g Package and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1600-02 04-2012 page 3 of 9 5SNA 0750G650300 Electrical configuration 5 7 9 4 6 8 3 2 1 Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1600-02 04-2012 page 4 of 9 5SNA 0750G650300 1500 1500 VCE = 25 V 1250 1250 25 C 1000 125 C IC [A] IC [A] 1000 750 750 500 500 250 250 125 C 25 C VGE = 15 V 0 0 0 1 2 3 4 5 0 6 1 2 3 4 5 Fig. 2 Typical on-state characteristics, chip level 1500 9 10 11 12 13 1500 Tvj = 125 C 17 V 17 V 1250 15 V 1250 15 V 13 V 13 V 11 V 11 V 1000 IC [A] 1000 IC [A] 8 Typical transfer characteristics, chip level Tvj = 25 C 750 500 750 500 250 9V 250 9V 0 0 0 1 2 3 4 5 6 0 VCE [V] Fig. 3 7 VGE [V] VCE [V] Fig. 1 6 Typical output characteristics, chip level 1 2 3 4 5 6 7 8 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1600-02 04-2012 page 5 of 9 5SNA 0750G650300 20 25 VCC = 3600 V VGE = 15 V RGon = 2.7 ohm RGoff = 15 ohm CGE = 220 nF Tvj = 125 C L = 280 nH 20 Eon Eon Eon, Eoff [J] Eon, Eoff [J] 15 VCC = 3600 V IC = 750 A CGE = 220 nF VGE = 15 V Tvj = 125 C L = 280 nH 10 15 10 Eoff Eoff 5 5 -6 2 -3 Esw [J] = 5.64 x 10 x IC + 9.17 x 10 x IC + 1.65 0 0 0 250 500 750 1000 1250 0 1500 5 Typical switching energies per pulse vs collector current Fig. 6 100 td(off) 10 25 Typical switching energies per pulse vs gate resistor tf td(off) td(on) tr 1 tf 1 VCC = 3600 V IC = 750 A CGE = 220 nF VGE = 15 V Tvj = 125 C L = 280 nH td(on) tr 0.1 0.1 0 250 500 750 1000 1250 0 1500 Typical switching times vs collector current 5 10 15 20 25 RG [ohm] IC [A] Fig. 7 20 10 VCC = 3600 V RGon = 2.7 ohm RGoff = 15 ohm CGE = 220 nF VGE = 15 V Tvj = 125 C L = 280 nH td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] 15 RG [ohm] IC [A] Fig. 5 10 Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1600-02 04-2012 page 6 of 9 5SNA 0750G650300 20 1000 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Tvj = 25 C VCC = 3600 V 15 Cies 100 C [nF] VGE [V] VCC = 4500 V 10 Coes 10 5 Cres IC = 750 A Tvj = 25 C 1 0 0 5 10 15 20 25 30 35 0 VCE [V] Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 1 2 3 4 Qg [C] 5 6 7 Typical gate charge characteristics 2.5 Chip Module 2 ICpulse / IC 1.5 1 VCC 4400 V Tvj = 125 C VGE = 15 V RG = 15 ohm CGE = 220nF 0.5 0 0 1000 2000 3000 4000 5000 6000 7000 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1600-02 04-2012 page 7 of 9 5SNA 0750G650300 3000 4000 1000 Irr 1000 Irr VCC = 3600 V IF = 750 A CGE = 220 nF Tvj = 125 C L = 280 nH 500 500 -3 2 Erec [mJ] = -1.12 x 10 x I F + 3.94 x IF + 375 0 0 0 250 500 750 1000 1250 0 1500 1 2 3 di/dt [kA/s] IF [A] Fig. 12 RG = 2.2 ohm RG = 2.7 ohm RG = 3.3 ohm RG = 4.7 ohm 1500 Qrr 1500 RG = 5.6 ohm 2000 2000 RG = 8.2 ohm Qrr RG = 15 ohm 2500 RG = 3.9 ohm 2500 RG = 22 ohm 3000 Erec Erec [mJ], Irr [A], Qrr [C] 3500 Erec [mJ], Irr [A], Qrr [C] Erec VCC = 3600 V VGE = 15 V RG = 2.7 ohm CGE = 220 nF Tvj = 125 C L = 280 nH Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 1500 VCC 4400 V di/dt 4000 A/s Tvj = 125 C L = 280 nH 1500 1250 25 C 1250 1000 IR [A] IF [A] 1000 125 C 750 500 750 500 250 250 0 0 0 1 2 3 4 0 5 Typical diode forward characteristics, chip level 2000 3000 4000 5000 6000 7000 VR [V] VF [V] Fig. 14 1000 Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1600-02 04-2012 page 8 of 9 5SNA 0750G650300 0.1 Analytical function for transient thermal impedance: n R i (1 - e -t/ i ) Z th (j-c) (t) = 0.01 Zth(j-c) IGBT 0.001 i 1 2 IGBT i 1 Ri(K/kW) 8.5 2 151 5.84 DIODE Zth(j-c) [K/W] IGBT, DIODE Zth(j-c) Diode Ri(K/kW) 17 4.2 144 5.83 i(ms) i(ms) 3 4 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays 5SYA 2043-01 Load - cycle capability of HiPaks 5SZK 9120-00 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1600-02 04-2012