MIXA80R1200VA
Boost Chopper
XPT IGBT Module
4/5
1/2
9
10
6/7
Part number
MIXA80R1200VA
Backside: isolated
C25
CE(sat)
V V1,9
CES
120
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
V1-A-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20151102cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA80R1200VA
-di /dt = A/µs
T = °C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
120
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
min.
Conditions
Unit
84
V
V
CE(sat)
total power dissipation
390 W
collector emitter leakage current
6,5 V
turn-on delay time
70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
225
±30
T = °C
T = °C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2,2
2,2
5,95,4
mA
0,6 mA
0,2
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
230 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
6,8 mJ
8,3 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEma
1200
short circuit safe operating area
µs
SCSOA
10T = °C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
300 A
R
thJC
thermal resistance junction to case
0,32 K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
135
A
C
90T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2,30
V
VJ
2,10T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0,3
mA
VJ
0,8T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
12,5 µC
105 A
350 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
F GE
E
rec
4 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case
0,4 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = °C
VJ
VJ
75
6
75
75
100
100
10
10
10
600
900
1600
600
I
CM
1,9
R
thCH
thermal resistance case to heatsink
K/W
R
thCH
thermal resistance case to heatsink
K/W
IGBT
Diode
600 V
V = V
CEma
1200
80
80
80
80
125
125
125
125
125
nA
0,20
0,20
IXYS reserves the right to change limits, conditions and dimensions. 20151102cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA80R1200VA
Ratings
Part Number (Typ)
yywwA
Date Code Prod. Index
Lot No.:
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
I
X
M
A
80
R
1200
VA
Part description
IGBT
XPT IGBT
Gen 1 / std
Boost Chopper
V1-A-Pack
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm2,5
mounting torque
2
T
VJ
°C150
virtual junction temperature
-40
Weight g37
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6,0
12,0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
100 A
per terminal
125-40
terminal to terminal
V1-A-Pack
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MIXA80R1200VA 510585Blister 24MIXA80R1200VAStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V
mΩ
V
0 max
R
0 max
slope resistance *
1,1
17,9
1,09
9,1
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
IGBT Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20151102cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA80R1200VA
Remarks / Bemerkungen:
1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm
2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c
3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad
38
1
2
4
5
7
9
10
6
6
52 (see 1)
5,5
25
25,75
5,5
15
12,2
1x45°
±0,3
11,75
±0,3
0,5
*11
= =
*14 *7 *14*7
*14 *7 *14*7
25
25,75
±0,3
*11
*0
Ø 0,8
*
11,75
±0,3
Marking on product
Aufdruck der Typenbezeichnung
26
31,6
2
0,5
+0,2
3,6
±0,5
*0
*0
1
±0,2
2
+0,2
35
63
13
17
R2
max. 0,25
±0,25
Ø 6,1
Ø 2,5
1,5
Ø 2,1
4
6
4/5
1/2
9
10
6/7
Outlines V1-A-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20151102cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA80R1200VA
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
14
16
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
20
40
60
80
100
120
140
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
20
40
60
80
100
120
140
0 50 100 150 200 250 300
0
5
10
15
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
8 10 12 14 16 18 20 22 24
5
6
7
8
9
10
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
on
Fig. 6 Typ. switching energy vs. gate resistance
R
G
[]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
= 75 A
V
CE
= 600 V
R
G
= 10
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 75 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
V
GE
= 15 V
T
VJ
= 125°C
IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20151102cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
MIXA80R1200VA
1000 1200 1400 1600 1800 2000 2200
4
8
12
16
20
24
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
2
0
0
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
50 A
100 A
200 A
Fig. 7 Typ. Forward current versus V
F
Fig. 8 Typ. reverse recov.charge Q
rr
vs. di/dt
1000 1200 1400 1600 1800 2000 2200
40
60
80
100
120
140
160
I
RR
[A]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
200 A
50 A
100 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
1000 1200 1400 1600 1800 2000 2200
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
200 A
50 A
100 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ. recovery time t
rr
versus di/dt
Fig. 11 Typ. recovery energy E
rec
versus di/dt
1000 1200 1400 1600 1800 2000 2200
0
2
4
6
8
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
200 A
50 A
100 A
0.001 0.01 0.1 1 10
0.01
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transient thermal impedance
IGBT
Diode
Diode
IXYS reserves the right to change limits, conditions and dimensions. 20151102cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
