MUN2211T1-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

May, 2002 – Rev. 9 1Publication Order Number:

MUN2211T1/D

MUN2211T1 Series

Preferred Devices

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SC–59

package which is designed for low power surface mount applications.

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Moisture Sensitivity Level: 1

•ESD Rating – Human Body Model: Class 1

ESD Rating – Machine Model: Class B

•The SC–59 package can be soldered using wave or reflow. The

modified gull–winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

•Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Base Voltage VCBO 50 Vdc

Collector-Emitter Voltage VCEO 50 Vdc

Collector Current IC100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD230 (Note 1)

338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

°C/W

Thermal Resistance –

Junction-to-Ambient RθJA 540 (Note 1)

370 (Note 2) °C/W

Thermal Resistance –

Junction-to-Lead RθJL 264 (Note 1)

287 (Note 2) °C/W

Junction and Storage

Temperature Range TJ, Tstg –55 to +150 °C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

SC–59

CASE 318D

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

NPN SILICON

BIAS RESISTOR

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

EMITTER

(GROUND)

PIN 2

BASE

(INPUT)

MARKING DIAGRAM

8x = Specific Device Code*

M = Date Code

8x M

DEVICE MARKING INFORMATION

*See specific marking information in the device marking table

on page 2 of this data sheet.

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DEVICE MARKING AND RESISTOR VALUES

Device Package Marking R1 (K) R2 (K) Shipping

MUN2211T1 SC–59 8A 10 10 3000/Tape & Reel

MUN2212T1 SC–59 8B 22 22 3000/Tape & Reel

MUN2213T1 SC–59 8C 47 47 3000/Tape & Reel

MUN2214T1 SC–59 8D 10 47 3000/Tape & Reel

MUN2215T1 (Note 3) SC–59 8E 10 ∞3000/Tape & Reel

MUN2216T1 (Note 3) SC–59 8F 4.7 ∞3000/Tape & Reel

MUN2230T1 (Note 3) SC–59 8G 1.0 1.0 3000/Tape & Reel

MUN2231T1 (Note 3) SC–59 8H 2.2 2.2 3000/Tape & Reel

MUN2232T1 (Note 3) SC–59 8J 4.7 4.7 3000/Tape & Reel

MUN2233T1 (Note 3) SC–59 8K 4.7 47 3000/Tape & Reel

MUN2234T1 (Note 3) SC–59 8L 22 47 3000/Tape & Reel

MUN2236T1 SC–59 8N 100 100 3000/Tape & Reel

MUN2237T1 SC–59 8P 47 22 3000/Tape & Reel

MUN2240T1 (Note 3) SC–59 8T 47 ∞3000/Tape & Reel

MUN2241T1 (Note 3) SC–59 8U 100 ∞3000/Tape & Reel

3. New devices. Updated curves to follow in subsequent data sheets.

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc

Emitter-Base Cutoff Current MUN2211T1

(VEB = 6.0 V, IC = 0) MUN2212T1

MUN2213T1

MUN2214T1

MUN2215T1

MUN2216T1

MUN2230T1

MUN2231T1

MUN2232T1

MUN2233T1

MUN2234T1

MUN2236T1

MUN2237T1

MUN2240T1

MUN2241T1

IEBO –

–

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.05

0.13

0.2

0.1

mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc

Collector-Emitter Breakdown Voltage (Note 4)

(IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc

ON CHARACTERISTICS (Note 4)

DC Current Gain MUN2211T1

(VCE = 10 V, IC = 5.0 mA) MUN2212T1

MUN2213T1

MUN2214T1

MUN2215T1

MUN2216T1

MUN2230T1

MUN2231T1

MUN2232T1

MUN2233T1

MUN2234T1

MUN2236T1

MUN2237T1

MUN2240T1

MUN2241T1

hFE 35

160

3.0

8.0

160

100

140

350

5.0

200

150

140

350

–

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1

(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/

MUN2232T1/MUN2233T1/MUN2234T1

VCE(sat) – – 0.25 Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN2211T1

MUN2212T1

MUN2214T1

MUN2215T1

MUN2216T1

MUN2230T1

MUN2231T1

MUN2232T1

MUN2233T1

MUN2234T1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN2213T1

MUN2240T1

(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ) MUN2236T1

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) MUN2237T1

(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kΩ) MUN2241T1

VOL –

–

0.2

Vdc

4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

MUN2211T1 Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS (Note 5) (Continued)

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2230T1

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2215T1

MUN2216T1

MUN2233T1

MUN2240T1

VOH 4.9 – – Vdc

Input Resistor MUN2211T1

MUN2212T1

MUN2213T1

MUN2214T1

MUN2215T1

MUN2216T1

MUN2230T1

MUN2231T1

MUN2232T1

MUN2233T1

MUN2234T1

MUN2235T1

MUN2236T1

MUN2237T1

MUN2240T1

MUN2241T1

R17.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

15.4

32.9

4.7

1.0

2.2

4.7

100

28.6

61.1

6.1

1.3

2.9

6.1

28.6

130

61.1

130

61.1

100

kΩ

Resistor Ratio MUN2211T1/MUN2212T1/MUN2213T1/

MUN2236T1

MUN2214T1

MUN2215T1/MUN2216T1/MUN2240T1/

MUN2241T1

MUN2230T1/MUN2231T1/MUN2232T1

MUN2233T1

MUN2234T1

MUN2237T1

R1/R20.8

0.17

–

0.8

0.055

0.38

1.7

1.0

0.21

–

1.0

0.1

0.47

2.1

1.2

0.25

–

1.2

0.185

0.56

2.6

5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

Figure 1. Derating Curve

350

200

150

100

–50 0 50 100 150

TA, AMBIENT TEMPERATURE (°C)

RθJA = 370°C/W

250

PD, POWER DISSIPATION (mW)

300

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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2211T1

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN

Figure 2. VCE(sat) versus IC

1002030

IC, COLLECTOR CURRENT (mA)

0.1

VO = 0.2 V TA=-25°C

75°C

25°C

40 50

Figure 3. DC Current Gain

Figure 4. Output Capacitance

0.1

0.01

0.001 0204060 80

IC, COLLECTOR CURRENT (mA)

VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)

1000

100

10 1 10 100

IC, COLLECTOR CURRENT (mA)

TA=75°C

25°C

-25°C

TA=-25°C

25°C

IC/IB = 10

Figure 5. Output Current versus Input Voltage

75°C

25°C

TA=-25°C

100

0.1

0.01

0.001 01 2 34

Vin, INPUT VOLTAGE (VOLTS)

5678910

Figure 6. Input Voltage versus Output Current

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

Cob, CAPACITANCE (pF)

75°C

VCE = 10 V

f = 1 MHz

IE = 0 V

TA = 25°C

VO = 5 V

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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2212T1

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN

Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain

Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage

1000

IC, COLLECTOR CURRENT (mA)

TA=75°C

25°C

-25°C

100

101 100

75°C 25°C

100

Vin, INPUT VOLTAGE (VOLTS)

0.1

0.01

0.001 246 810

TA=-25°C

IC, COLLECTOR CURRENT (mA)

100

VO = 0.2 V

TA=-25°C

75°C

0.1 10 20 30 40 50

25°C

Figure 11. Input Voltage versus Output Current

0.001

VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)

25°C

IC/IB = 10

0.01

0.1

IC, COLLECTOR CURRENT (mA)

020 6080

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

Cob, CAPACITANCE (pF)

VCE = 10 V

f = 1 MHz

IE = 0 V

TA = 25°C

VO = 5 V

TA=-25°C

75°C

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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2213T1

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN

Figure 12. VCE(sat) versus IC

0246810

100

0.1

0.01

0.001

Vin, INPUT VOLTAGE (VOLTS)

TA=-25°C

75°C25°C

Figure 13. DC Current Gain

Figure 14. Output Capacitance

100

0.1

010 2030 40 50

IC, COLLECTOR CURRENT (mA)

Figure 15. Output Current versus Input Voltage

1000

IC, COLLECTOR CURRENT (mA)

TA=75°C

25°C

-25°C

100

10 1 100

Figure 16. Input Voltage versus Output Current

0204060 80

0.1

0.01

IC, COLLECTOR CURRENT (mA)

TA=-25°C

25°C75°C

VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)

TA=-25°C

25°C

75°C

010203040

0.8

0.6

0.4

0.2

VR, REVERSE BIAS VOLTAGE (VOLTS)

Cob, CAPACITANCE (pF)

VCE = 10 V

f = 1 MHz

IE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

MUN2211T1 Series

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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2214T1

0.1 01020304050

100

10246810

3.5

2.5

1.5

0.5

00 2 4 6 8101520253035404550

VR, REVERSE BIAS VOLTAGE (VOLTS)

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN

Figure 17. VCE(sat) versus IC

IC, COLLECTOR CURRENT (mA)

020406080

VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)

Figure 18. DC Current Gain

1 10 100

IC, COLLECTOR CURRENT (mA)

Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

Cob , CAPACITANCE (pF)

Figure 21. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

0.1

0.01

0.001

-25°C

25°C

TA=75°C

VCE = 10

300

250

200

150

100

02468 1520405060708090

f = 1 MHz

lE = 0 V

TA = 25°C

TA=-25°C

25°C

75°C

IC/IB = 10

75°C25°C

TA=-25°C

VO = 5 V

VO= 0.2 V

TA=-25°C

25°C

75°C

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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2236T1

100

0.1 0102030355

100

0510

3.5

2.5

1.5

0.5

00 5 10 15 20 25 30 35 40 45

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 22. VCE(sat) versus IC

IC, COLLECTOR CURRENT (mA)

010203040

Figure 23. DC Current Gain

0.1 1 100

IC, COLLECTOR CURRENT (mA)

Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

Figure 26. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

0.1

0.01

VCE = 10 V

1000

100

10 10

f = 1 MHz

lE = 0 V

TA = 25°C

TA= –25°C25°C

75°C

25°C

TA= –25°C

VO = 5 V

VO = 0.2 V TA= –25°C25°C

75°C

VCE(sat), COLLECTOR VOLTAGE (VOLTS)

IC/IB = 10

hFE, DC CURRENT GAIN

TA= –25°C25°C

75°C

Cob, CAPACITANCE (pF)

4.5

15 20 25 30 35 40

0.1

IC, COLLECTOR CURRENT (mA)

15 25

Vin, INPUT VOLTAGE (VOLTS)

5152535

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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2237T1

100

10102030405

100

024

1.4

0.6

0.2

00 5 10 15 20 25 30 35 40 45

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 27. VCE(sat) versus IC

IC, COLLECTOR CURRENT (mA)

010203040

Figure 28. DC Current Gain

1 100

IC, COLLECTOR CURRENT (mA)

Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

Figure 31. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

0.1

0.01

VCE = 10 V

1000

100

110

f = 1 MHz

lE = 0 V

TA = 25°C

TA= –25°C25°C

75°C

25°CTA= –25°C

VO = 5 V

VO = 0.2 V

TA= –25°C

25°C75°C

VCE(sat), COLLECTOR VOLTAGE (VOLTS)

IC/IB = 10

hFE, DC CURRENT GAIN

TA= –25°C25°C

75°C

Cob, CAPACITANCE (pF)

1.8

6 8 10 12 14 16

0.001

IC, COLLECTOR CURRENT (mA)

15 25

Vin, INPUT VOLTAGE (VOLTS)

5152535

1.6

1.2

0.8

0.4

0.1

0.01

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TYPICAL APPLICATIONS FOR NPN BRTs

LOAD

+12 V

Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

OUT

VCC

ISOLATED

LOAD

FROM µP OR

OTHER LOGIC

+12 V

Figure 33. Open Collector Inverter:

Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source

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PD = TJ(max) – TA

RθJA

PD = 150°C – 25°C

370°C/W = 338 milliwatts

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied dur-

ing cooling

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

INFORMATION FOR USING THE SC–59 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

SC–59 POWER DISSIPATION

The power dissipation of the SC–59 is a function of the

pad size. This can vary from the minimum pad size for sol-

dering to the pad size given for maximum power dissipa-

tion. Power dissipation for a surface mount device is deter-

mined b y T J(max), the maximum rated junction temperature

of the die, RθJA, the thermal resistance from the device

junction t o ambient; and the operating temperature, TA. Us-

ing the values provided on the data sheet, PD can be calcu-

lated as follows.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature TA of 25°C, one

can calculate the power dissipation of the device which in

this case is 338 milliwatts.

The 370°C/W assumes the use of the recommended foot-

print on a glass epoxy printed circuit board to achieve a

power dissipation of 338 milliwatts. Another alternative

would be to use a ceramic substrate or an aluminum core

board such as Thermal Clad. Using a board material such

as Thermal Clad, the power dissipation can be doubled us-

ing the same footprint.

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10°C.

inches

0.039

1.0

0.094

0.8

2.4

0.031

0.95

0.037

0.95

0.037

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STEP 1

PREHEAT

ZONE 1

RAMP"

STEP 2

VENT

SOAK"

STEP 3

HEATING

ZONES 2 & 5

RAMP"

STEP 4

HEATING

ZONES 3 & 6

SOAK"

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

STEP 6

VENT

STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO 219°C

PEAK AT

SOLDER JOINT

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

100°C

150°C

160°C

140°C

Figure 35. Typical Solder Heating Profile

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

170°C

For any given circuit board, there will be a group of

control settings that will give the desired heat pattern. The

operator must set temperatures for several heating zones,

and a figure for belt speed. Taken together, these control

settings make up a heating “profile” for that particular

circuit board. On machines controlled by a computer, the

computer remembers these profiles from one operating

session t o the next. Figure 7 shows a typical heating profile

for use when soldering a surface mount device to a printed

circuit board. This profile will vary among soldering

systems but it is a good starting point. Factors that can

affect the profile include the type of soldering system in

use, density and types of components on the board, type of

solder used, and the type of board or substrate material

being used. This profile shows temperature versus time.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the surface mounted package

should be the same as the pad size on the printed circuit

board, i.e., a 1:1 registration.

TYPICAL SOLDER HEATING PROFILE

The line on the graph shows the actual temperature that

might be experienced on the surface of a test board at or

near a central solder joint. The two profiles are based on a

high density and a low density board. The Vitronics

SMD310 convection/infrared reflow soldering system was

used to generate this profile. The type of solder used was

62/36/2 Tin Lead Silver with a melting point between

177–189°C. When this type of furnace is used for solder

reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because i t has a lar ge surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

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PACKAGE DIMENSIONS

SC–59

CASE 318D–04

ISSUE F

DIM

MIN MAX MIN MAX

INCHES

2.70 3.10 0.1063 0.1220

MILLIMETERS

B1.30 1.70 0.0512 0.0669

C1.00 1.30 0.0394 0.0511

D0.35 0.50 0.0138 0.0196

G1.70 2.10 0.0670 0.0826

H0.013 0.100 0.0005 0.0040

J0.09 0.18 0.0034 0.0070

K0.20 0.60 0.0079 0.0236

L1.25 1.65 0.0493 0.0649

S2.50 3.00 0.0985 0.1181

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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Notes

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

MUN2211T1/D

Thermal Clad is a trademark of the Bergquist Company.

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Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

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