2
DN2530
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
0V
V
DD
RGEN
0V
-10V
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVDSX Drain-to-source breakdown voltage 300 - - V VGS = -5.0V, ID = 100µA
VGS(OFF) Gate-to-source off voltage -1.0 - -3.5 V VDS = 25V, ID = 10µA
ΔVGS(OFF) Change in VGS(OFF) with temperature - - -4.5 mV/OC VDS = 25V, ID = 10µA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
ID(OFF) Drain-to-source leakage current
- - 10 µA VDS = Max rating, VGS = -10V
- - 1.0 mA VDS = 0.8 Max Rating,
VGS = -10V, TA = 125OC
IDSS Saturated drain-to-source current 200 - - mA VGS = 0V, VDS = 25V
RDS(ON)
Static drain-to-source on-state
resistance - - 12 Ω VGS = 0V, ID = 150mA
ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 0V, ID = 150mA
GFS Forward transconductance 300 - - mmho VDS = 10V, ID = 150mA
CISS Input capacitance - - 300
pF
VGS = -10V,
VDS = 25V,
f = 1MHz
COSS Common source output capacitance - - 30
CRSS Reverse transfer capacitance - - 5
td(ON) Turn-on delay time - - 10
ns
VDD = 25V,
ID = 150mA,
RGEN = 25Ω,
trRise time - - 15
td(OFF) Turn-off delay time - - 15
tfFall time - - 20
VSD Diode forward voltage drop - - 1.8 V VGS = -10V, ISD = 150mA
trr Reverse recovery time - 600 - ns VGS = -10V, ISD = 1.0A
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Thermal Characteristics
Package
ID
(continuous)†
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TA = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
†
(mA)
IDRM
(mA)
TO-243AA 200 500 1.6‡15 78‡200 500
TO-92 175 500 0.74 125 170 175 500
Notes:
† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Switching Waveforms and Test Circuit