1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
DN2530
GATE
SOURCE
DRAIN
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
General Description
The DN2530 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSX
Drain-to-gate voltage BVDGX
Gate-to-source voltage ±20V
Operating and storage
temperature -55OC to +150OC
Soldering temperature* 300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Device Package Options BVDSX/BVDGX
(V)
RDS(ON)
(max)
(Ω)
IDSS
(min)
(mA)
TO-243AA (SOT-89) TO-92
DN2530 DN2530N8-G DN2530N3-G 300 12 200
-G indicates package is RoHS compliant (‘Green’)
N-Channel Depletion-Mode
Vertical DMOS FETs
Pin Configurations
TO-243AA (SOT-89) (N8)
TO-92 (N3)
GATE
SOURCE
DRAIN
DRAIN
TO-243AA (SOT-89) (N8)
TO-92 (N3)
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
DN
2530
YYWW
DN5TW W = Code for week sealed
= “Green” Packaging
Product Marking
2
DN2530
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
0V
V
DD
RGEN
0V
-10V
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVDSX Drain-to-source breakdown voltage 300 - - V VGS = -5.0V, ID = 100µA
VGS(OFF) Gate-to-source off voltage -1.0 - -3.5 V VDS = 25V, ID = 10µA
ΔVGS(OFF) Change in VGS(OFF) with temperature - - -4.5 mV/OC VDS = 25V, ID = 10µA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
ID(OFF) Drain-to-source leakage current
- - 10 µA VDS = Max rating, VGS = -10V
- - 1.0 mA VDS = 0.8 Max Rating,
VGS = -10V, TA = 125OC
IDSS Saturated drain-to-source current 200 - - mA VGS = 0V, VDS = 25V
RDS(ON)
Static drain-to-source on-state
resistance - - 12 Ω VGS = 0V, ID = 150mA
ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 0V, ID = 150mA
GFS Forward transconductance 300 - - mmho VDS = 10V, ID = 150mA
CISS Input capacitance - - 300
pF
VGS = -10V,
VDS = 25V,
f = 1MHz
COSS Common source output capacitance - - 30
CRSS Reverse transfer capacitance - - 5
td(ON) Turn-on delay time - - 10
ns
VDD = 25V,
ID = 150mA,
RGEN = 25Ω,
trRise time - - 15
td(OFF) Turn-off delay time - - 15
tfFall time - - 20
VSD Diode forward voltage drop - - 1.8 V VGS = -10V, ISD = 150mA
trr Reverse recovery time - 600 - ns VGS = -10V, ISD = 1.0A
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Thermal Characteristics
Package
ID
(continuous)
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TA = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
(mA)
IDRM
(mA)
TO-243AA 200 500 1.615 78200 500
TO-92 175 500 0.74 125 170 175 500
Notes:
† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Switching Waveforms and Test Circuit
3
DN2530
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Typical Performance Curves
Output Characteristics
1.0
0.8
0.6
0.4
0.2
0
0 50100 150 200 250
VDS (volts)
ID (amperes)
Transconductance vs. Drain Current
ID (amperes)
Power Dissipation vs. Case Temperature
0 15010050 1257525
TO-92
TO-243AA
VGS = 1.0V
0.5V
-0.5V
-1.0V
-1.5V
0V
Saturation Characteristics
0.25
0.2
0.15
0.1
0.05
0
2.0
1.6
1.2
0.8
0.4
0
0 1 2 3 54
VGS = 1.0V
-1.5V
0.5V 0V
-0.5V
-1.0V
Maximum Rated Safe Operating Area
1 100010010
1
0.1
0.01
0.001
VDS (volts)
ID (amperes)
TO-92 (pulsed)
TC = 25°C
TO-92 (DC)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
tp (seconds)
0
TO-243AA
TA = 25°C
PD = 1.6W
0.5
0.4
0.3
0.2
0.1
0
0 0.250.05 0.1 0.15 0.2
VDS = 10V
TA = -55°C
TA = 25°C
TA = 125°C
TO-92
TC = 25°C
PD = 1.0W
ID (amperes)
VDS (volts)
GFS (siemens)
TC (°C)
PD (watts)
4
DN2530
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
BVDSS (normalized)
1.1
1.05
1.0
0.95
0.9
0.85
-50 0 0.2 0.4 0.6 0.8 1.00 50 100 150
Transfer Characteristics
Tj (°C)
VGS (Volts)
VDS (Volts)
ID (amperes)
1.0
0.8
0.6
0.4
0.2
0
-2 -1 01 2
Capacitance Vs. Drain-to-Source Voltage
C (picofarads)
200
150
100
50
0
0 1020 30 40
VGS = -5V
ID = 100mA
VGS = 0V
VDS = 10V
VGS = -10V
COSS
CRSS
CISS
TA = -55°C
TA = 25°C RDS (ON) @ ID = 150mA
VGS(OFF) @ 10mA
VDS = 40V
TA = 125°C
On-Resistance vs. Drain Current
50
40
30
20
10
0
ID (amps)
QC (Nanocoulombs)
RDS(on) (ohms)
-50 0 50 100 150
0 1 2 3 4 5
VGS (Off) and RDS Variation with Temperature
2.5
2
1.5
1
0.5
0
15
10
5
0
-5
Tj (°C)
VGS(th) (normalized)
Gate Drive Dynamic Characteristics
VGS (volts)
VDS = 20V
250pF
152pf
5
DN2530
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014.014.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022.022.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version D080408.
Seating Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2008 All rights reserved. Unauthorized use or reproduction is prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
6
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
DN2530
Doc.# DSFP-DN2530
A103108
3-Lead TO-243AA (SOT-89) Package Outline (N8)
Symbol A b b1 C D D1 E E1 e e1 H L
Dimensions
(mm)
MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13
1.50
BSC
3.00
BSC
3.94 0.89
NOM - - - - - - - - - -
MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version D070908.
bb1