©2002 Fairchild Semiconductor Corporation Rev. A2, January 2002
KSB1116/1116A
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: PW ≤350µs, Duty Cycle≤2%
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : KSB1116
: KSB1116A -60
-80 V
V
VCEO Collector-Emitter Voltage : KSB1116
: KSB1116A -50
-60 V
V
VEBO Emitter-Base Voltage -6 V
ICCollector Current (DC) -1 A
ICP * Collector Current (Pulse) -2 A
PCCollector Power Dissipation 0.75 W
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Param e ter Test Condi tion Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -60V, IE=0 -100 nA
IEBO Emitter Cut-off Current VEB= -6V, IC= 0 -100 nA
hFE1
hFE2
* DC Current Gain : KSB111 6
: KSB1116A VCE= -2V, IC= -100mA
VCE= -2V, IC = -1A
135
135
81
600
400
VBE (on) * Base-Emitter On Volt age VCE= -2V, IC= -50mA -600 -650 -700 mV
VCE (sat) * Collector-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.2 -0.3 V
VBE (sat) * Base-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.9 - 1.2 V
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 25 pF
fTCurrent Gain Bandwidth Product VCE= -2V, IC= -100mA 70 120 MHz
tON Turn On Time VCC= -10V, IC= -100mA
IB1= -IB2= -10mA
VBE (off)= 2~3V
0.07 µs
tSTG Storage Tim e 0.7 µs
tFFall Time 0.07 µs
Classification Y G L
hFE1 135 ~ 270 200 ~ 400 300 ~ 600
KSB1116/1116A
Audio Frequency Power Amplifi er & Medium
Speed Swi tching
• Complement to KSD1616/1616A
1. Emitter 2. Collector 3. Base
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. A2, January 2002
KSB1116/1116A
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Switching Time Figure 6. Collector Output Capacitance
0-2-4-6-8-10
0
-20
-40
-60
-80
-100 IB = -250µA
IB = -200µA
IB = -100µA
IB = -150µA
IB = -50µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0 IB = -4.0mA
IB = -4.5mA
IB = -5.0mA IB = -3.5mA
IB = -3.0mA
IB = -2.5mA
IB = -2.0mA
IB = -1.0mA
IB = -1.5mA
IB = -0.5mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLE C TOR -E MITTER VOLTA G E
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.01
-0.1
-1
-10
IC = 20 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.001 -0.01 -0.1 -1
0.01
0.1
1
10 VCC = -10V
IC = 10IB1 = -10IB2
tF
tON
tSTG
tON, tSTG, tF [µs], TIME
IC[A], COLLECTOR CURRENT
-1 -10 -100
1
10
100
1000
IE=0
f = 1MH z
Cob[pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
©2002 Fairchild Semiconductor Corporation
KSB1116/1116A
Rev. A2, January 2002
Typical Characteristics (Continued)
Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area
Figure 9. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -2V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
-1 -10 -100
-0.01
-0.1
-1
-10
10ms
KSB1116A
KSB1116
PW=1ms
200ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
PC[W], POWER DISSIPATION
Ta[oC], AMBIENT TEMPERATURE
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A2, January 2002
KSB1116/1116A
Dimensions in Millimeters
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2002 Fairchild Semiconductor Corporation Rev. H4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
STAR*POWE R is used under license
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