4 /Rectifier Diodes SBD, LLD Features of the SBD, LLD SBD (Shottoky-Barrier Diode) Ultra Low-IR SBD Features =175 IR VF IR 1/10 LLD VF 10% IR 1/10 LLD SBD IR-SBD Temperature reduction effect of Ultra Low-IR SBD on standard power supply. * Junction temperature (Tj) of 175C is guaranteed Able to operate at a higher temperature than conventional products. * Compared with the conventional low IR series, offers equivalent VF while IR is reduced to 1/10 or less. Reduced risk of thermal runaway and enhanced reliability at higher temperatures. * Compared with conventional LLD, VF is reduced by 10%, while IR is reduced to 1/10 or less. Can be used to replace existing LLD or lower voltage class SBD. n ow d 6C . 15 UL-IR-SBD (150V/20A) LLD (200V/20A) Condition : 75W standard power supply, AC100V f=125kHz Super LLD series for PFC circuit Features Super LLD-3 PFC Super LLD VF-trr Super LLD-1 MOSFET+DIODE Super LLD VF-trr VF-trr characteristics of Super LLD Series trr (ns) 10A,-100A/us,100 LLD (Low Loss Diode) Super LLD-2, 2A PFC DCM-PFC VF Super LLD-3 for CCM-PFC * Improvement in the VF-trr trade off line of the conventional type. * As a result of having balanced shorter trr with a lower VF than the conventional Super LLD-1 for CCM-PFC, Super LLD series, the restraint of the temperature rise and low loss of MOSFET + Diode and the high efficiency of the were made possible. SuperLLD2 SuperLLD1 SuperLLD3 CCM-PFC Super LLD-3 Temperature reduction effect of Super LLD-3 on CCM-PFC DIODET () MOSFETT () Super LLD-2, 2A for DCM-PFC * Low power loss is achieved by optimization of DCM-PFC of low VF. * Low noise depend on soft recovery characteristic. VF (V) 10A,100 E MOSF T: 2.0 C do wn 8C : 8. n dow DE DIO SuperLLD-3 (600V/10A) 46 SuperLLD-1 (600V/10A) Condition : 400W PC Server supply, AC100V f=68.7kHz /Rectifier Diodes 4 Schottky-Barrier Diodes(SBD) 1 in one-package Device type SD882-02 SD883-02 SD832-03 CB803-03 SD833-03 SD834-03 ERA82-004 ERA81-004 ERA83-004 SC802-04 SD832-04 SD862-04 ERB83-004 ERB81-004 SD883-04 SD863-04 SD833-04 ERC81-004 SD834-04 ERC81S-004 ERA83-006 SC802-06 ERB83-006 CB863-06 SD863-06 SD833-06 ERC81-006 ERA85-009 SC802-09 ERA84-009 ERB84-009 SD833-09 ERC84-009 SD863-10 CB863-12 FD867-12 FD868-12 CB863-15 FD867-15 FD868-15 SMD Maximum rating VRRM IO1 Volts Amps. SMD 20 2.0 (Tl=96C) SMD 20 3.0 (Tl=103C) SMD 30 2.0 (Tl=124C) 30 2.0 (Tl=133C) SMD 30 3.0 (Tl=127C) SMD 30 4.0 (Tl=100C) 40 0.6 (Ta=45C) 40 1.0 (Ta=25C) 40 1.0 (Tl=136C) SMD 40 1.0 (Tl=136C)4 SMD 40 2.0 (Tl=120C) SMD 40 2.0 (Tl=125C) 40 2.0 (Tl=130C) 40 2.0 (Tl=130C) SMD 40 3.0 (Tl=100C) SMD 40 3.0(Tl=116C) SMD 40 3.0 (Tl=122C) 40 3.0 (Tl=130C) SMD 40 4.0 (Tl=96C) 40 5.0 (Tl=108C) 60 1.0 (Tl=136C) SMD 60 1.0 (Tl=136C)4 60 2.0 (Tl=130C) 60 2.0 (Tl=131C) SMD 60 3.0 (Tl=115C) SMD 60 3.0 (Tl=121C) 60 3.0 (Tl=131C) 90 1.0 (Tl=131C) SMD 90 1.0 (Tl=131C)4 90 1.0 (Tl=131C)5 90 2.0 (Ta=50C)6 SMD 90 3.0 (Tl=112C) 90 3.0 (Tl=122C) SMD 100 3.0 (Tl=105C) 120 2.0 (Tl=124C) 120 3.0 (Tl=115C) 120 4.0 (Tl=106C) 150 2.0 (Tl=116C) 150 3.0 (Tl=113C) 150 4.0 (Tl=102C) ( ) 1 2 10ms. 3 VR=VRRM 4 ,15x15mm 5 (10x10mm) 6 20x20mm Letter symbols VRRM VRSM IO IFSM Tj Ta Tc Thermal rating IFSM2 Tj and Tstg Amps. 70 -55 to +125 70 -40 to +125 70 -55 to +150 80 -40 to +150 70 -40 to +150 70 -55 to +150 25 -40 to +150 50 -40 to +150 50 -40 to +150 40 -40 to +150 70 -55 to +150 80 -55 to +150 100 -40 to +150 100 -40 to +150 70 -40 to +125 110 -55 to +150 70 -40 to +150 120 -40 to +150 70 -55 to +150 140 -40 to +150 30 -40 to +150 F 30 -40 to +150 60 -40 to +150 90 -40 to +150 60 -55 to +150 60 -40 to +150 80 -40 to +150 30 -40 to +150 30 -40 to +150 30 -40 to +150 60 -40 to +150 60 -40 to +150 80 -40 to +150 60 -55 to +150 70 -40 to +150 100 -40 to +150 120 -40 to +150 60 -40 to +150 90 -40 to +150 110 -40 to +150 (Ta=25) Characteristics VFM IRRM3 Max. Volts Max.mA 0.39 (IF=2.0A) 2 0.39 (IF=3.0A) 2 0.46 (IF=2.0A) 1 5 0.47 (IF=1.5A) 0.46 (IF=3.0A) 1 1 0.46 (IF=4.0A) 0.55 (IF=0.6A) 1 2 0.55 (IF=1.0A) 0.55 (IF=1.0A) 2 0.55 (IF=1.0A) 2 0.51 (IF=2.0A) 1 0.59 (IF=2.0A) 0.1 0.55 (IF=2.0A) 5 0.55 (IF=2.0A) 5 1 0.45 (IF=3.0A) 0.59 (IF=3.0A) 0.1 1 0.51 (IF=3.0A) 0.55 (IF=3.0A) 5 1 0.51 (IF=4.0A) 0.55 (IF=5.0A) 5 2 0.58 (IF=1.0A) 0.58 (IF=1.0A) 2 0.58 (IF=2.0A) 5 0.62 (IF=2.0A) 0.1 0.62 (IF=3.0A) 0.1 1 0.58 (IF=2.5A) 0.58 (IF=3.0A) 5 1 0.82 (IF=1.0A) 0.85 (IF=1.0A) 1 0.90 (IF=1.0A) 1 0.90 (IF=2.0A) 2 0.85 (IF=3.0A) 1 0.80 (IF=3.0A) 5 0.84 (IF=3.0A) 0.1 0.08 0.88 (IF=2.0A) 0.88 (IF=3.0A) 0.12 0.15 0.88 (IF=4.0A) 0.90 (IF=2.0A) 0.08 0.12 0.90 (IF=3.0A) 0.90 (IF=4.0A) 0.15 Package Rth (j-c) /W 18.0 18.0 18.0 10.0 18.0 18.0 10.0 15.0 10.0 15.0 18.0 18.0 10.0 12.0 18.0 18.0 18.0 8.0 18.0 8.0 10.0 15.0 10.0 10.0 18.0 18.0 8.0 10.0 15.0 15.0 12.0 18.0 8.0 18.0 10.0 8.0 8.0 10.0 8.0 8.0 SD SD SD Lead-3 SD SD Lead-1 Lead-2 Lead-1 SC SD SD Lead-3 Lead-4 SD SD SD Lead-7 SD Lead-7 Lead-1 SC Lead-3 Lead-3 SD SD Lead-7 Lead-1 SC Lead-2 Lead-4 SD Lead-7 SD Lead-3 Lead-7 Lead-7 Lead-3 Lead-7 Lead-7 Net mass Grams 0.035 0.035 0.035 0.3 0.035 0.035 0.18 0.22 0.18 0.06 0.035 0.035 0.3 0.5 0.035 0.035 0.035 1.2 0.035 1.2 0.18 0.06 0.3 0.3 0.035 0.035 1.2 0.18 0.06 0.22 0.5 0.035 1.2 0.035 0.3 1.2 1.2 0.3 1.2 1.2 ( ) Conditions Resistive load 2 Sine wave, 10ms 3 VR=VRRM 4 Mounted to fabric base epoxy resin printed circuits (land 15x15mm) 5 P.C board mounting (land 10x10mm) 6 Mounted Cu fins (20x20mm) on the both lead 1 Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Junction temperature Ambient temperature Case temperature Tstg VFM IRRM trr Rthj-c Tl IF(AV) ( ) Storage temperature Forward voltage Reverse current Reverse recovery time Thermal resistance (Junction to case) Lead temperature Average forward current 47 4 /Rectifier Diodes 1 in one-package Device type KS826S04 YG811S04R YG812S04R YG811S06R YG804S06R YG811S09R SMD Maximum rating VRRM IO1 Volts Amps. SMD 40 5.0 (Tc=110) 40 5.0 (Tc=122) 45 10 (Tc=124) 60 5.0 (Tc=127) 60 15 (Tc=99) 90 5.0 (Tc=116) ( ) 1 50Hz duty=1/2 2 10ms. 3 V =V R RRM Letter symbols VRRM VRSM IO IFSM Tj Ta Tc 48 Schottky-Barrier Diodes(SBD) Thermal rating IFSM2 Tj and Tstg Amps. 80 -40 to +150 120 -40 to +150 120 -40 to +150 80 -40 to +150 120 -40 to +150 80 -40 to +150 (Ta=25) Characteristics VFM IRRM3 Rth (j-c) Max. Volts Max.mA /W 0.55 (IF=5.0A) 5 10 5 5.0 0.55 (IF=5.0A) 0.6 (IF=10A) 2 2.5 5 5.0 0.59 (IF=5.0A) 0.63 (IF=15A) 20 2.2 5 5.0 0.9 (IF=4.0A) Package K-pack(S) TO-220F TO-220F TO-220F TO-220F TO-220F ( ) Conditions 1 50Hz Square wave duty=1/2 2 Sine wave, 10ms 3 V =V R RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Junction temperature Ambient temperature Case temperature Tstg VFM IRRM trr Rthj-c Tl IF(AV) ( ) Storage temperature Forward voltage Reverse current Reverse recovery time Thermal resistance (Junction to case) Lead temperature Average forward current Net mass Grams 0.6 1.7 1.7 1.7 1.7 1.7 /Rectifier Diodes 4 Schottky-Barrier Diodes (SBD) 2 in one-package Device type KP883C02 KS883C02 YG881C02R YG882C02R YG885C02R KP823C03 KS823C03 YG831C03R YG802C03R YG832C03R YG835C03R YG838C03R KP823C04 KS823C04 YG801C04R YG831C04R YG802C04R YG832C04R YG803C04R YG805C04R YG835C04R YG838C04R MS838C04 YG801C06R YG802C06R YG803C06R YG805C06R MS808C06 KP823C09 KS823C09 YG801C09R YG802C09R YG801C10R YG802C10R YG805C10R YG808C10R SMD Maximum rating VRRM IO1 Volts Amps. 20 7.0 (Tc=89) SMD 20 7.0 (Tc=89) 20 8.0 (Tc=103) 20 16 (Tc=94) 20 30 (Tc=81) 30 5.0 (Tc=117) SMD 30 5.0 (Tc=117) 30 6.0 (Tc=127) 30 10 (Tc=126) 30 12 (Tc=118) 30 25 (Tc=99) 30 38 (Tc=85) 40 5.0 (Tc=107) SMD 40 5.0 (Tc=107) 40 5.0 (Tc=125) 40 6.0 (Tc=122) 40 10 (Tc=110) 40 12 (Tc=112) 40 15 (Tc=92) 40 20 (Tc=100) 40 22 (Tc=96) 40 30 (Tc=85) SMD 40 30 (Tc=111) 60 5.0 (Tc=125) 60 10 (Tc=118) 60 15 (Tc=94) 60 20 (Tc=108) SMD 60 30 (Tc=118) 90 5.0 (Tc=100) SMD 90 5.0 (Tc=100) 90 5.0 (Tc=117) 90 10 (Tc=102) 100 5.0 (Tc=117) 100 10 (Tc=102) 100 20 (Tc=91) 100 30 (Tc=80) ( ) 1 50Hz duty=1/2 () 2 10ms. 3 4 V =V R RRM Thermal rating IFSM2 Tj and Tstg Amps. 60 -40 to +125 60 -40 to +125 80 -40 to +125 120 -40 to +125 120 -40 to +125 60 -40 to +150 60 -40 to +150 90 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 200 -40 to +150 60 -40 to +150 60 -40 to +150 100 -40 to +150 80 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 180 -40 to +150 180 -40 to +150 60 -40 to +150 80 -40 to +150 100 -40 to +150 80 -40 to +150 150 -40 to +150 60 -40 to +150 60 -40 to +150 60 -40 to +150 80 -40 to +150 60 -40 to +150 80 -40 to +150 100 -40 to +150 180 -40 to +150 (Ta=25) Characteristics IRRM4 VFM3 Max. Volts Max.mA 10 0.39 (IF=2.5A) 0.39 (IF=2.5A) 10 10 0.39 (IF=2.0A) 10 0.39 (IF=4.0A) 30 0.39 (IF=8.0A) 5 0.47 (IF=2.5A) 0.47 (IF=2.5A) 5 0.45 (IF=2.0A) 5 5 0.47 (IF=4.0A) 5 0.45 (IF=4.0A) 15 0.45 (IF=6.0A) 10 0.45 (IF=12.5A) 0.55 (IF=2.5A) 5 5 0.55 (IF=2.5A) 5 0.55 (IF=2.0A) 2 0.53 (IF=2.0A) 0.55 (IF=4.0A) 5 0.53 (IF=4.0A) 3 3 0.55 (IF=7.0A) 15 0.6 (IF=10A) 0.53 (IF=8.0A) 6 8 0.53 (IF=12.5A) 0.53 (IF=12.5A) 8 0.58 (IF=2.0A) 5 0.58 (IF=4.0A) 5 0.58 (IF=6.0A) 5 0.58 (IF=8.0A) 15 0.58 (IF=12.5A) 3 0.9 (IF=2.0A) 5 0.9 (IF=2.5A) 5 0.9 (IF=2.0A) 2 0.9 (IF=4.0A) 5 0.8 (IF=1.5A) 0.7 0.8 (IF=3.0A) 1.2 0.8 (IF=5.0A) 2.5 0.8 (IF=10A) 20 Package Rth (j-c) /W 10.0 10.0 5.0 3.5 2.5 10.0 10.0 5.0 3.5 3.5 2.5 2.0 10.0 10.0 5.0 5.0 3.5 3.5 3.5 2.5 2.5 2.0 1.2 5.0 3.5 3.0 2.5 1.2 10.0 10.0 5.0 3.5 5.0 3.5 2.5 2.0 K-pack(P) K-pack(S) TO-220F TO-220F TO-220F K-pack(P) K-pack(S) TO-220F TO-220F TO-220F TO-220F TO-220F K-pack(P) K-pack(S) TO-220F TO-220F TO-220F TO-220F TO-220F TO-220F TO-220F TO-220F TFP TO-220F TO-220F TO-220F TO-220F TFP K-pack(P) K-pack(S) TO-220F TO-220F TO-220F TO-220F TO-220F TO-220F Net mass Grams 0.6 0.6 1.7 1.7 1.7 0.6 0.6 1.7 1.7 1.7 1.7 1.7 0.6 0.6 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 0.8 1.7 1.7 1.7 1.7 0.8 0.6 0.6 1.7 1.7 1.7 1.7 1.7 1.7 ( ) Conditions 1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 per element 4 V =V R RRM per element 49 4 /Rectifier Diodes IR Ultra Low IR Schottky-Barrier Diodes 2 in one-package Device type YG872C10R YA872C10R YG875C10R YA875C10R YG878C10R YA878C10R YG872C12R YA872C12R YG875C12R YA875C12R YG878C12R YA878C12R YG872C15R YA872C15R YG875C15R YA875C15R YG878C15R YA878C15R YG872C20R YA872C20R YG875C20R YA875C20R YG878C20R YA878C20R SMD Maximum rating VRRM IO1 Volts Amps. 100 10 (Tc=146) 100 10 (Tc=158) 100 20 (Tc=131) 100 20 (Tc=144) 100 30 (Tc=122) 100 30 (Tc=142) 120 10 (Tc=143) 120 10 (Tc=158) 120 20 (Tc=127) 120 20 (Tc=144) 120 30 (Tc=116) 120 30 (Tc=141) 150 10 (Tc=144) 150 10 (Tc=157) 150 20 (Tc=130) 150 20 (Tc=143) 150 30 (Tc=120) 150 30 (Tc=140) 200 10 (Tc=143) 200 10 (Tc=157) 200 20 (Tc=127) 200 20 (Tc=141) 200 30 (Tc=116) 200 30 (Tc=138) ( ) 1 50Hz duty=1/2 () 2 10ms. 3 I =0.5Io F 4 V =V R RRM 50 Thermal rating IFSM2 Tj and Tstg Amps. 125 -40 to +175 125 -40 to +175 145 -40 to +175 145 -40 to +175 160 -40 to +175 160 -40 to +175 125 -40 to +175 125 -40 to +175 145 -40 to +175 145 -40 to +175 160 -40 to +175 160 -40 to +175 125 -40 to +175 125 -40 to +175 145 -40 to +175 145 -40 to +175 160 -40 to +175 160 -40 to +175 125 -40 to +175 125 -40 to +175 145 -40 to +175 145 -40 to +175 160 -40 to +175 160 -40 to +175 (Ta=25) Characteristics Package IRRM4 Rth (j-c) VFM3 Max. Volts Max.mA /W 0.82 3.5 TO-220F 0.015 0.82 0.015 2.0 TO-220AB 0.86 0.020 2.5 TO-220F 0.86 0.020 1.75 TO-220AB 0.86 0.030 2.0 TO-220F 0.86 0.030 1.25 TO-220AB 0.84 0.015 3.5 TO-220F 0.84 0.015 2.0 TO-220AB 0.88 0.020 2.5 TO-220F 0.88 0.020 1.75 TO-220AB 0.88 0.030 2.0 TO-220F 0.88 0.030 1.25 TO-220AB 0.86 0.015 3.5 TO-220F 0.86 0.015 2.0 TO-220AB 0.89 0.020 2.5 TO-220F 0.89 0.020 1.75 TO-220AB 0.89 0.030 2.0 TO-220F 0.89 0.030 1.25 TO-220AB 0.89 0.015 3.5 TO-220F 0.89 0.015 2.0 TO-220AB 0.93 0.020 2.5 TO-220F 0.93 0.020 1.75 TO-220AB 0.93 0.030 2.0 TO-220F 0.93 0.030 1.25 TO-220AB ( ) Conditions 1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 I =0.5Io per element F 4 V =V R RRM per element Net mass Grams 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 2.0 /Rectifier Diodes 4 IR Low IR Schottky-Barrier Diodes 1 in one-package Device type YG864S06R YG861S12R YG861S15R SMD Maximum rating VRRM IO1 Volts Amps. 60 15 (Tc=101) 120 5 (Tc=104) 150 5 (Tc=94) ( ) 1 50Hz duty=1/2 2 10ms. 3 I =Io F Thermal rating IFSM2 Tj and Tstg Amps. 160 -40 to +150 75 -40 to +150 75 -40 to +150 (Ta=25) Characteristics IRRM4 Rth (j-c) VFM3 Max. Volts Max.mA /W 0.74 0.20 3.5 0.88 0.15 5.0 0.90 0.15 5.0 ( ) Conditions 50Hz Square wave duty=1/2 2 Sine wave, 10ms 3 I =Io F Package TO-220F TO-220F TO-220F Net mass Grams 1.7 1.7 1.7 1 4 VR=VRRM 4 VR=VRRM 2 in one-package Device type YG862C04R YA862C04R TS862C04R YG865C04R YA865C04R TS865C04R MS865C04 YG868C04R YA868C04R TS868C04R MS868C04 YG869C04R YA869C04R TP869C04R YG862C06R YA862C06R TS862C06R YG865C06R YA865C06R TS865C06R YG868C06R YA868C06R TS868C06R YG869C06R YA869C06R TP869C06R YG862C08R YA862C08R TS862C08R MS862C08 YG865C08R YA865C08R TS865C08R MS865C08 YG868C08R YA868C08R TS868C08R YG869C08R YA869C08R TP869C08R SMD Maximum rating VRRM IO1 Volts Amps. 45 10 (Tc=129) 45 10 (Tc=138) SMD 45 10 (Tc=138) 45 20 (Tc=115) 45 20 (Tc=126) SMD 45 20 (Tc=126) SMD 45 20 (Tc=125) 45 30 (Tc=105) 45 30 (Tc=122) SMD 45 30 (Tc=122) SMD 45 30 (Tc=122) 45 40 (Tc=112) 45 40 (Tc=120) 45 40 (Tc=120) 60 10 (Tc=124) 60 10 (Tc=136) SMD 60 10 (Tc=136) 60 20 (Tc=109) 60 20 (Tc=122) SMD 60 20 (Tc=122) 60 30 (Tc=101) 60 30 (Tc=119) SMD 60 30 (Tc=119) 60 40 (Tc=105) 60 40 (Tc=114) 60 40 (Tc=114) 80 10 (Tc=109) 80 10 (Tc=126) SMD 80 10 (Tc=126) SMD 80 10 (Tc=115) 80 20 (Tc=89) 80 20 (Tc=107) SMD 80 20 (Tc=107) SMD 80 20 (Tc=108) 80 30 (Tc=72) 80 30 (Tc=105) SMD 80 30 (Tc=105) 80 40 (Tc=86) 80 40 (Tc=98) 80 40 (Tc=98) ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 I =0.5Io 1 F 4 V =V R RRM 1 Thermal rating IFSM2 Tj and Tstg Amps. 125 -40 to +150 125 -40 to +150 125 -40 to +150 145 -40 to +150 145 -40 to +150 145 -40 to +150 145 -40 to +150 160 -40 to +150 160 -40 to +150 160 -40 to +150 160 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 125 -40 to +150 125 -40 to +150 125 -40 to +150 145 -40 to +150 145 -40 to +150 145 -40 to +150 160 -40 to +150 160 -40 to +150 160 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 125 -40 to +150 125 -40 to +150 125 -40 to +150 125 -40 to +150 145 -40 to +150 145 -40 to +150 145 -40 to +150 145 -40 to +150 160 -40 to +150 160 -40 to +150 160 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 (Ta=25) Characteristics IRRM4 VFM3 Max. Volts Max.mA 0.61 0.15 0.61 0.15 0.61 0.15 0.63 0.175 0.63 0.175 0.63 0.175 0.63 0.175 0.63 0.20 0.63 0.20 0.63 0.20 0.63 0.20 0.61 0.20 0.61 0.20 0.61 0.20 0.68 0.15 0.68 0.15 0.68 0.15 0.74 0.175 0.74 0.175 0.74 0.175 0.74 0.20 0.74 0.20 0.74 0.20 0.70 0.20 0.70 0.20 0.70 0.20 0.76 0.15 0.76 0.15 0.76 0.15 0.76 0.15 0.76 0.175 0.76 0.175 0.76 0.175 0.76 0.175 0.76 0.20 0.76 0.20 0.76 0.20 0.71 0.20 0.71 0.20 0.71 0.20 Package Rth (j-c) /W 3.5 2.0 2.0 2.5 1.75 1.75 1.75 2.0 1.25 1.25 1.25 1.2 1.0 1.0 3.5 2.0 2.0 2.5 1.75 1.75 2.0 1.25 1.25 1.2 1.0 1.0 3.5 2.0 2.0 3.0 2.5 1.75 1.75 1.75 2.0 1.25 1.25 1.2 1.0 1.0 TO-220F TO220AB T-pack(S) TO-220F TO220AB T-pack(S) TFP TO-220F TO220AB T-pack(S) TFP TO-220F TO220AB T-pack(P) TO-220F TO220AB T-pack(S) TO-220F TO220AB T-pack(S) TO-220F TO220AB T-pack(S) TO-220F TO220AB T-pack(P) TO-220F TO-220AB T-pack(S) TFP TO-220F TO-220AB T-pack(S) TFP TO-220F TO-220AB T-pack(S) TO-220F TO220AB T-pack(P) ( ) Conditions 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 3 I =0.5Io per element Sine wave, 10ms per element F 4 V =V R RRM per element Net mass Grams 1.7 2.0 1.6 1.7 2.0 1.6 0.8 1.7 2.0 1.6 0.8 1.7 2.0 1.6 1.7 2.0 1.6 1.7 2.0 1.6 1.7 2.0 1.6 1.7 2.0 1.6 1.7 2.0 1.6 0.8 1.7 2.0 1.6 0.8 1.7 2.0 1.6 1.7 2.0 1.6 1 2 51 4 /Rectifier Diodes IR Low IR Schottky-Barrier Diodes 2 in one-package Device type YG862C10R YA862C10R TS862C10R YG865C10R YA865C10R TS865C10R MS865C10 YG868C10R YA868C10R TS868C10R TP868C10R MS868C10 PA868C10R YG869C10R YA869C10R TP869C10R YG852C12R YA852C12R YG862C12R YA862C12R TP862C12R TS862C12R YG855C12R YA855C12R YG865C12R YA865C12R PH865C12 TP865C12R TS865C12R MS865C12 YG858C12R YA858C12R TP858C12R YG868C12R YA868C12R PH868C12 TS868C12R MS868C12 YG869C12R YA869C12R SMD Maximum rating VRRM IO1 Volts Amps. 100 10 (Tc=118) 100 10 (Tc=132) SMD 100 10 (Tc=132) 100 20 (Tc=103) 100 20 (Tc=117) SMD 100 20 (Tc=117) SMD 100 20 (Tc=117) 100 30 (Tc=91) 100 30 (Tc=113) SMD 100 30 (Tc=113) 100 30 (Tc=113) SMD 100 30 (Tc=114) 100 30 (Tc=107) 100 40 (Tc=94) 100 40 (Tc=105) 100 40 (Tc=105) 120 10 (Tc=113) 120 10 (Tc=128) 120 10 (Tc=122) 120 10 (Tc=137) 120 10 (Tc=137) SMD 120 10 (Tc=137) 120 20 (Tc=94) 120 20 (Tc=111) 120 20 (Tc=116) 120 20 (Tc=126) 120 20 (Tc=126) 120 20 (Tc=126) SMD 120 20 (Tc=126) SMD 120 20 (Tc=126) 120 30 (Tc=80) 120 30 (Tc=106) 120 30 (Tc=106) 120 30 (Tc=116) 120 30 (Tc=122) 120 30 (Tc=122) SMD 120 30 (Tc=122) SMD 120 30 (Tc=115) 120 40 (Tc=95) 120 40 (Tc=104) ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 I =0.5Io 1 F 4 V =V R RRM 1 52 Thermal rating IFSM2 Tj and Tstg Amps. 125 -40 to +150 125 -40 to +150 125 -40 to +150 145 -40 to +150 145 -40 to +150 145 -40 to +150 145 -40 to +150 160 -40 to +150 160 -40 to +150 160 -40 to +150 160 -40 to +150 160 -40 to +150 160 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 55 -40 to +150 55 -40 to +150 75 -40 to +150 75 -40 to +150 75 -40 to +150 75 -40 to +150 95 -40 to +150 95 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 110 -40 to +150 110 -40 to +150 110 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 (Ta=25) Characteristics IRRM4 VFM3 Max. Volts Max.mA 0.86 0.15 0.86 0.15 0.86 0.15 0.86 0.175 0.86 0.175 0.86 0.175 0.86 0.175 0.86 0.20 0.86 0.20 0.86 0.20 0.86 0.20 0.86 0.20 0.86 0.20 0.82 0.20 0.82 0.20 0.82 0.20 0.93 0.15 0.93 0.15 0.88 0.15 0.88 0.15 0.88 0.15 0.88 0.15 0.98 0.175 0.98 0.175 0.88 0.15 0.88 0.15 0.88 0.15 0.88 0.15 0.88 0.15 0.88 0.15 1.01 0.2 1.01 0.2 1.01 0.2 0.88 0.20 0.88 0.20 0.88 0.20 0.88 0.20 0.88 0.20 0.95 0.20 0.95 0.20 Package Rth (j-c) /W 3.5 2.0 2.0 2.5 1.75 1.75 1.75 2.0 1.25 1.25 1.25 1.2 1.5 1.2 1.0 1.0 3.5 2 3.00 1.20 1.50 1.50 2.5 1.75 1.75 1.25 1.50 1.25 1.25 1.25 2 1.25 1.25 1.20 1.00 1.20 1.00 1.20 1.20 1.00 TO-220F TO-220AB T-pack(S) TO-220F TO-220AB T-pack(S) TFP TO-220F TO-220AB T-pack(S) T-pack(P) TFP TO-3P(Q) TO-220F TO-220AB T-pack(P) TO-220F TO-220AB TO-220F TO-220AB T-pack(P) T-pack(S) TO-220F TO-220AB TO-220F TO-220AB TO-247 T-pack(P) T-pack(S) TFP TO-220F TO-220AB T-pack(P) TO-220F TO-220AB TO-247 T-pack(S) TFP TO-220F TO-220AB ( ) Conditions 1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 I =0.5Io per element F 4 V =V R RRM per element Net mass Grams 1.7 2.0 1.6 1.7 2.0 1.6 0.8 1.7 2.0 1.6 1.6 0.8 5.1 1.7 2.0 1.6 1.7 2.0 1.7 2.0 1.6 1.6 1.7 2.0 1.7 2.0 4.9 1.6 1.6 0.8 1.7 2.0 1.6 1.7 2.0 4.9 1.6 0.8 1.7 2.0 /Rectifier Diodes 4 IR Low IR Schottky-Barrier Diodes 2 in one-package Device type YG852C15R YA852C15R YG862C15R YA862C15R TP862C15R TS862C15R YG855C15R YA855C15R YG865C15R PH865C15 PG865C15R YA865C15R TP865C15R TS865C15R MS865C15 YG858C15R YA858C15R YG868C15R YA868C15R TS868C15R MS868C15 PA868C15R PH868C15 YG869C15R YA869C15R SMD Maximum rating VRRM IO1 Volts Amps. 150 10 (Tc=104) 150 10 (Tc=124) 150 10 (Tc=117) 150 10 (Tc=134) 150 10 (Tc=134) SMD 150 10 (Tc=134) 150 20 (Tc=86) 150 20 (Tc=105) 150 20 (Tc=101) 150 20 (Tc=109) 150 20 (Tc=80) 150 20 (Tc=115) 150 20 (Tc=115) SMD 150 20 (Tc=115) SMD 150 20 (Tc=115) 150 30 (Tc=61) 150 30 (Tc=94) 150 30 (Tc=113) 150 30 (Tc=119) SMD 150 30 (Tc=119) SMD 150 30 (Tc=113) 150 30 (Tc=129) 150 30 (Tc=129) 150 40 (Tc=90) 150 40 (Tc=100) ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 I =0.5Io 1 F 4 V =V R RRM 1 Thermal rating IFSM2 Tj and Tstg Amps. 55 -40 to +150 55 -40 to +150 75 -40 to +150 75 -40 to +150 75 -40 to +150 75 -40 to +150 95 -40 to +150 95 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 150 -40 to +150 110 -40 to +150 110 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 190 -40 to +150 (Ta=25) Characteristics IRRM4 VFM3 Max. Volts Max.mA 0.96 0.15 0.96 0.15 0.90 0.15 0.90 0.15 0.90 0.15 0.90 0.15 1.01 0.175 1.01 0.175 0.90 0.15 0.90 0.15 0.90 0.15 0.90 0.15 0.90 0.15 0.90 0.15 0.90 0.15 1.13 0.2 1.13 0.2 0.90 0.20 0.90 0.20 0.90 0.20 0.90 0.20 0.90 0.20 0.90 0.20 0.97 0.20 0.97 0.20 Package Rth (j-c) /W 3.5 2 3.00 1.50 1.50 1.50 2.5 1.75 1.75 1.50 2.50 1.25 1.25 1.25 1.25 2 1.25 1.20 1.00 1.00 1.20 1.20 1.20 1.20 1.00 TO-220F TO-220AB TO-220F TO-220AB T-pack(P) T-pack(S) TO-220F TO-220AB TO-220F TO-247 TO-3PF TO-220AB T-pack(P) T-pack(S) TFP TO-220F TO-220AB TO-220F TO-220AB T-pack(S) TFP TO-3P TO-247 TO-220F TO-220AB Net mass Grams 1.7 2.0 1.7 2.0 1.6 1.6 1.7 2.0 1.7 4.9 6.0 2.0 1.6 1.6 0.8 1.7 2.0 1.7 2.0 1.6 0.8 5.5 4.9 1.7 2.0 ( ) Conditions 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 3 I =0.5Io per element Sine wave, 10ms per element F 4 V =V R RRM per element 1 2 53 4 /Rectifier Diodes LLD II ( PFC ) Super LLD II (Critical mode PFC) Device type YA951S6R YG951S6R YA971S6R YG971S6R YA952S6R YG952S6R YA972S6R YG972S6R YG971S8R 1 in one-package SMD Maximum rating VRRM IO1 IFSM2 Volts Amps. Amps. 600 45 5 (Tc=95) 600 45 5 (Tc=80) 600 70 8 (Tc=116) 600 70 8 (Tc=89) 600 80 10 (Tc=90) 600 80 10 (Tc=75) 600 10 (Tc=115) 100 600 100 10 (Tc=89) 800 60 5 (Tc=93) ( ) 1 50Hz duty=1/2 2 10ms. 3 V =V R RRM 4 I =0.1A, IR=0.2A, Irec=0.05A F Device type YA952C6R TS952C6R YG952C6R YA955C6R TS955C6R YG955C6R PA955C6R YA975C6R YG975C6R PH975C6 (Ta=25) Characteristics VFM IRRM3 Max. Volts Max.A 1.45 (IF=5A) 8 1.45 (IF=5A) 8 1.55 (IF=8A) 10 1.55 (IF=8A) 10 1.45 (IF=10A) 10 1.45 (IF=10A) 10 1.55 (IF=10A) 10 1.55 (IF=10A) 10 2.2 (IF=5A) 10 Package trr4 sec. 0.065 0.065 0.05 0.05 0.07 0.07 0.05 0.05 0.05 Rth (j-c) /W 7.0 9.0 2.5 4.5 4.0 5.0 2.0 3.5 4.5 TO-220AB TO-220F TO-220AB TO-220F TO-220AB TO-220F TO-220AB TO-220F TO-220F Net mass Grams 2.0 1.7 2.0 1.7 2.0 1.7 2.0 1.7 1.7 ( ) Conditions 1 50Hz Square wave duty=1/2 2 Sine wave, 10ms 3 V =V R RRM 4 I =0.1A, IR=0.2A, Irec=0.05A F 2 in one-package SMD Maximum rating VRRM IO1 IFSM2 Volts Amps. Amps. 600 45 10 (Tc=103) SMD 600 45 10 (Tc=103) 600 45 10 (Tc=80) 600 80 20 (Tc=97) SMD 600 80 20 (Tc=97) 600 80 20 (Tc=60) 600 80 20 (Tc=84) 600 20 (Tc=106) 100 600 100 20 (Tc=89) 600 100 20 (Tc=97) ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 V =V R RRM 1 4 I =0.1A, IR=0.2A, Irec=0.05A F 54 Thermal rating Tj and Tstg -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 Thermal rating Tj and Tstg -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 (Ta=25) Characteristics VFM IRRM3 Max. Volts Max.A 1.45 (IF=5A) 8 1.45 (IF=5A) 8 1.45 (IF=5A) 8 1.45 (IF=10A) 10 1.45 (IF=10A) 10 1.45 (IF=10A) 10 1.45 (IF=10A) 10 1.55 (IF=10A) 10 1.55 (IF=10A) 10 1.55 (IF=10A) 10 Package trr4 sec. 0.065 0.065 0.065 0.07 0.07 0.07 0.07 0.05 0.05 0.05 Rth (j-c) /W 3.0 3.0 4.5 1.75 1.75 3.0 2.2 1.25 1.75 1.5 TO-220AB T-pack(S) TO-220F TO-220AB T-pack(S) TO-220F TO-3P(Q) TO-220AB TO-220F TO-247 Net mass Grams 2.0 1.6 1.7 2.0 1.6 1.7 5.1 2.0 1.7 4.9 ( ) Conditions 1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 V =V R RRM per element 4 I =0.1A, IR=0.2A, Irec=0.05A F 4 /Rectifier Diodes LLD III ( PFC ) Super LLD III (Continuous mode PFC) Device type YA981S6R YG981S6R YA982S6R YG982S6R 1 in one-package SMD Maximum rating VRRM IO1 Volts Amps. 600 8 (Tc=99) 600 8 (Tc=58) 600 10 (Tc=99) 600 10 (Tc=60) IFSM2 Amps. 40 40 50 50 Device type YA982C6R TS982C6R YG982C6R YA985C6R TS985C6R YG985C6R PH985C6 PG985C6R (Ta=25) Characteristics VFM IRRM3 Max. Volts Max.A 3.0 (IF=8A) 25 25 3.0 (IF=8A) 3.0 (IF=10A) 30 3.0 (IF=10A) 30 ( ) Conditions 1 50Hz Square wave duty=1/2 2 Sine wave, 10ms 4 I =0.1A, IR=0.2A, Irec=0.05A F ( ) 1 50Hz duty=1/2 2 10ms. 3 V =V R RRM 4 I =0.1A, IR=0.2A, Irec=0.05A F Thermal rating Tj and Tstg -40 to +150 -40 to +150 -40 to +150 -40 to +150 3 Package trr4 sec. 0.026 0.026 0.028 0.028 Rth (j-c) /W 2.5 4.5 2.0 3.5 TO-220AB TO-220F TO-220AB TO-220F Net mass Grams 2.0 1.7 2.0 1.7 VR=VRRM 2 in one-package SMD Maximum rating VRRM IO1 Volts Amps. 600 16 (Tc=88) SMD 600 16 (Tc=88) 600 16 (Tc=68) 600 20 (Tc=86) SMD 600 20 (Tc=86) 600 20 (Tc=60) 600 20 (Tc=73) 600 20 (Tc=47) IFSM2 Amps. 40 40 40 50 50 50 50 50 ( ) 1 50Hz duty=1/2() 2 10ms. 1 3 V =V R RRM 1 4 I =0.1A. IR=0.2A. Irec=0.05A F Thermal rating Tj and Tstg -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 -40 to +150 (Ta=25) Characteristics VFM IRRM3 Max. Volts Max.A 3.0 (IF=8A) 25 3.0 (IF=8A) 25 3.0 (IF=8A) 25 30 3.0 (IF=10A) 3.0 (IF=10A) 30 30 3.0 (IF=10A) 3.0 (IF=10A) 30 3.0 (IF=10A) 30 Package trr4 sec. 0.026 0.026 0.026 0.028 0.028 0.028 0.028 0.028 Rth (j-c) /W 1.5 1.5 2 1.25 1.25 1.75 1.5 2.0 TO-220AB T-pack(S) TO-220F TO-220AB T-pack(S) TO-220F TO-247 TO-3PF Net mass Grams 2.0 1.6 1.7 2.0 1.6 1.7 4.9 6.0 ( ) Conditions 1 50Hz Square wave duty 1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 V =V R RRM per element 4 I =0.1A. IR=0.2A. Irec=0.05A F 55 4 /Rectifier Diodes Device type ERA91-02 ERA92-02 SC902-2 ERB91-02 ERB93-02 ERC91-02 Device type KP926S2 KS926S2 YG911S2R YG912S2R YG911S3R 1 in one-package SMD Maximum rating VRRM IO1 Volts Amps. 200 0.5 (Ta=60C) 200 1.0 (Ta=25C) SMD 200 1.0 (Ta=25C) 200 1.0 (Ta=50C) 200 1.5 (Ta=40C) 200 3.0 (Ta=25C) Thermal rating IFSM2 Tj and Tstg Amps. 10 -40 to +150 25 -40 to +150 25 -40 to +150 20 -40 to +150 25 -40 to +150 50 -40 to +150 (Ta=25) Characteristics IRRM4 VFM3 Max. Volts Max.A 0.95 50 1.05 50 1.05 50 0.95 50 0.95 100 0.95 100 SMD Maximum rating VRRM IO1 Volts Amps. 200 5 (Tc=106) SMD 200 5 (Tc=106) 200 5 (Tc=134) 200 10 (Tc=116) 300 5 (Tc=128) Thermal rating IFSM2 Tj and Tstg Amps. 70 -40 to +150 70 -40 to +150 50 -40 to +150 80 -40 to +150 40 -40 to +150 (Ta=25) Characteristics IRRM4 VFM3 Max. Volts Max.A 0.95 100 0.95 100 0.95 100 0.98 200 1.2 100 ( ) 1 50Hz duty=1/2 2 10ms. 3 I =Io F 5 I =0.1A. IR=0.2A. Irec=0.05A F Device type KP923C2 KS923C2 YG901C2R YG902C2R YG906C2R MS906C2 YG901C3R YG902C3R YG906C3R TS906C3R MS906C3 Low-Loss Fast Recovery Diodes (LLD) 4 VR=VRRM Rth (j-c) /W 10.0 10.0 15.0 10.0 10.0 8.0 trr5 sec. 0.035 0.035 0.035 0.035 0.035 0.035 Lead-1 Lead-1 SC Lead-3 Lead-6 Lead-7 Package Rth (j-c) /W 10.0 10.0 3.5 3.5 3.5 trr5 sec. 0.035 0.035 0.035 0.035 0.035 ( ) Conditions 1 50Hz Square wave duty 1/2 2 Sine wave, 10ms 3 I =Io F 5 I =0.1A. IR=0.2A. Irec=0.05A F 4 K-pack(P) K-pack(S) TO-220F TO-220F TO-220F Net mass Grams 0.18 0.18 0.06 0.22 0.4 1.2 Net mass Grams 0.6 0.6 1.7 1.7 1.7 VR=VRRM 2 in one-package SMD Maximum rating VRRM IO1 Volts Amps. 200 5 (Tc=103) SMD 200 5 (Tc=103) 200 5 (Tc=120) 200 10 (Tc=115) 200 20 (Tc=102) SMD 200 20 (Tc=105) 300 5 (Tc=105) 300 10 (Tc=101) 300 20 (Tc=109) SMD 300 20 (Tc=123) SMD 300 20 (Tc=95) Thermal rating IFSM2 Tj and Tstg Amps. 50 -40 to +150 50 -40 to +150 25 -40 to +150 50 -40 to +150 80 -40 to +150 80 -40 to +150 25 -40 to +150 40 -40 to +150 80 -40 to +150 80 -40 to +150 80 -40 to +150 ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 I =0.5Io 1 F 4 V =V R RRM 1 5 I =0.1A, IR=0.2A, Irec=0.05A F 56 Package (Ta=25) Characteristics IRRM4 VFM3 Max. Volts Max.A 0.95 100 0.95 100 0.95 100 0.95 100 0.98 200 0.98 200 1.2 100 1.2 100 1.2 200 1.2 200 1.2 200 Package trr5 sec. 0.035 0.035 0.035 0.035 0.035 0.035 0.035 0.035 0.035 0.035 0.035 Rth (j-c) /W 10.0 10.0 5.0 3.5 2.5 2.0 5.0 3.5 1.5 1.0 2.0 K-pack(P) K-pack(S) TO-220F TO-220F TO-220F TFP TO-220F TO-220F TO-220F T-pack(S) TFP Net mass Grams 0.6 0.6 1.7 1.7 1.7 0.8 1.7 1.7 1.7 1.6 0.8 ( ) Conditions 1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 I =0.5Io per element F 4 V =V R RRM per element 5 I =0.1A, IR=0.2A, Irec=0.05A F 4 /Rectifier Diodes Device type KS986S3 KS986S4 1 in one-package SMD Maximum rating VRRM IO1 Volts Amps. SMD 300 5 (Tc=128) SMD 400 5 (Tc=125) Thermal rating IFSM2 Tj and Tstg Amps. 90 -40 to +150 80 -40 to +150 Device type YG982C3R YA982C3R TS982C3R YG985C3R YA985C3R TS985C3R MS985C3 PG985C3R YG982C4R YA982C4R TS982C4R YG985C4R YA985C4R TS985C4R MS985C4 PG985C4R (Ta=25) Characteristics (Ta=25) IRRM4 trr5 VFM3 Max. Volts Max.A sec. 1.3 20 0.04 1.45 20 0.05 ( ) Conditions 50Hz Square wave duty=1/2 3 I =Io per element Sine wave, 10ms F 5 I =0.1A, IR=0.2A, Irec=0.05A F ( ) 1 50Hz duty=1/2 2 10ms. 3 I =Io 4 V =V F R RRM 5 I =0.1A, IR=0.2A, Irec=0.05A F Low-Loss Fast Soft Recovery Diodes (LLD) Package Rth (j-c) /W 3.5 3.5 K-pack(S) K-pack(S) Net mass Grams 0.6 0.6 1 2 4 VR=VRRM 2 in one-package SMD Maximum rating VRRM IO1 Volts Amps. 300 10 (Tc=112) 300 10 (Tc=128) SMD 300 10 (Tc=128) 300 20 (Tc=105) 300 20 (Tc=118) SMD 300 20 (Tc=118) SMD 300 20 (Tc=118) 300 20 (Tc=73) 400 10 (Tc=107) 400 10 (Tc=125) SMD 400 10 (Tc=125) 400 20 (Tc=100) 400 20 (Tc=114) SMD 400 20 (Tc=114) SMD 400 20 (Tc=114) 400 20 (Tc=64) Thermal rating IFSM2 Tj and Tstg Amps. 90 -40 to +150 90 -40 to +150 90 -40 to +150 110 -40 to +150 110 -40 to +150 110 -40 to +150 110 -40 to +150 110 -40 to +150 80 -40 to +150 80 -40 to +150 80 -40 to +150 100 -40 to +150 100 -40 to +150 100 -40 to +150 100 -40 to +150 100 -40 to +150 ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 I =0.5Io 1 F 4 V =V R RRM 1 5 I =0.1A, IR=0.2A, Irec=0.05A F (Ta=25) Characteristics (Ta=25) IRRM4 trr5 VFM3 Max. Volts Max.A sec. 1.3 20 0.04 1.3 20 0.04 1.3 20 0.04 1.3 35 0.04 1.3 35 0.04 1.3 35 0.04 1.3 35 0.04 1.3 35 0.04 1.45 20 0.05 1.45 20 0.05 1.45 20 0.05 1.45 35 0.05 1.45 35 0.05 1.45 35 0.05 1.45 35 0.05 1.45 35 0.05 Package Rth (j-c) /W 3 1.75 1.75 1.75 1.25 1.25 1.25 3 3 1.75 1.75 1.75 1.25 1.25 1.25 3 TO-220F TO-220AB T-pack(S) TO-220F TO-220AB T-pack(S) TFP TO-3PF TO-220F TO-220AB T-pack(S) TO-220F TO-220AB T-pack(S) TFP TO-3PF Net mass Grams 1.7 2.0 1.6 1.7 2.0 1.6 0.8 6.0 1.7 2.0 1.6 1.7 2.0 1.6 0.8 6.0 ( ) Conditions 1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 I =0.5Io per element F 4 V =V R RRM per element 5 I =0.1A, IR=0.2A, Irec=0.05A F 57 4 /Rectifier Diodes Schottky-Barrier Diodes (SBD) / 1 in one-package/2 in one-package Device type ERC80-004R 5 PA886C02R ESAB82-004R TP802C04R TS802C04R ESAC82-004R TS805C04R ESAC83-004R ESAD83M-004RR ESAD83-004R ESAC63-004R ESAC83M-006RR ESAC63-006R ESAD83M-006RR TS808C06R ESAD83-006R TS802C09R ESAC85-009R ESAD85M-009RR ESAD85-009R SMD Maximum rating VRRM IO1 Volts Amps. 40 5 (Tc=122) 20 30 (Tc=105) 40 5 (Tc=126) 40 10 (Tc=116) SMD 40 10 (Tc=116) 40 10 (Tc=116) SMD 40 20 (Tc=110) 40 20 (Tc=119) 40 30 (Tc=105) 40 30 (Tc=118) 45 20 (Tc=109) 60 20 (Tc=108) 60 20 (Tc=118) 60 30 (Tc=106) SMD 60 30 (Tc=115) 60 30 (Tc=119) SMD 90 10 (Tc=109) 90 10 (Tc=109) 90 25 (Tc=105) 90 25 (Tc=118) Thermal rating IFSM2 Tj and Tstg Amps. 120 -40 to +150 150 -40 to +125 100 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 150 -40 to +150 150 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 120 -40 to +150 80 -40 to +150 80 -40 to +150 100 -40 to +150 100 -40 to +150 Package Rth (j-c) /W 5.0 1.2 5.0 3.0 3.0 3.0 2.0 1.5 1.7 1.2 2.0 2.5 2.0 1.7 1.2 1.2 3.0 3.0 1.7 1.2 Net mass Grams 2.0 5.5 2.0 1.6 1.6 2.0 1.6 5.5 6.0 5.5 2.0 6.0 2.0 6.0 1.6 5.5 1.6 2.0 6.0 5.5 TO-220AB TO-3P TO-220AB T-pack(P) T-pack(S) TO-220AB T-pack(S) TO-3P TO-3PF TO-3P TO-220AB TO-3PF TO-220AB TO-3PF T-pack(S) TO-3P T-pack(S) TO-220AB TO-3PF TO-3P ( ) Conditions 1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 per element 4 V =V 5 1 in one-package R RRM per element ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 1 4 V =V 5 R RRM 1 (Ta=25) Characteristics IRRM4 VFM3 Max. Volts Max.mA 0.55 (IF=5.0A) 5 0.4 (IF=12.5A) 50 5 0.55 (IF=2.0A) 0.55 (IF=4.0A) 5 5 0.55 (IF=4.0A) 0.55 (IF=4.0A) 5 15 0.6 (IF=10A) 0.55 (IF=8.0A) 15 20 0.55 (IF=12.5A) 0.55 (IF=12.5A) 20 15 0.6 (IF=10A) 0.58 (IF=8.0A) 15 15 0.58 (IF=8.0A) 0.58 (IF=12.5A) 20 0.58 (IF=12.5A) 20 20 0.58 (IF=12.5A) 5 0.9 (IF=4.0A) 5 0.9 (IF=4.0A) 0.9 (IF=10A) 15 20 0.9 (IF=10A) Low-Loss Fast Recovery Diodes (LLD) / 1 in one-package/2 in one-package Device type ESAB92-02R TP901C2R TP902C2R TS902C2R ESAC92-02R ESAC93-02R ESAC93M-02RR ESAD92M-02RR TP906C2R TS906C2R ESAD92-02R TP902C3R TS902C3R ESAC93M-03RR ESAD92-03R ESAD92M-03RR PA905C4R PG905C4RR YG912S6RR 6 PA905C6RR SMD Maximum rating VRRM IO1 Volts Amps. 200 5 (Tc=120) 200 5 (Tc=120) 200 10 (Tc=125) SMD 200 10 (Tc=125) 200 10 (Tc=125) 200 12 (Tc=123) 200 12 (Tc=116) 200 20 (Tc=108) 200 20 (Tc=110) SMD 200 20 (Tc=110) 200 20 (Tc=115) 300 10 (Tc=115) SMD 300 10 (Tc=115) 300 12 (Tc=104) 300 20 (Tc=110) 300 20 (Tc=96) 400 20 (Tc=107) 400 20 (Tc=93) 600 10 (Tc=93) 600 20 (Tc=106) Thermal rating IFSM2 Tj and Tstg Amps. 25 -40 to +150 25 -40 to +150 50 -40 to +150 50 -40 to +150 50 -40 to +150 60 -40 to +150 60 -40 to +150 100 -40 to +150 80 -40 to +150 80 -40 to +150 100 -40 to +150 40 -40 to +150 40 -40 to +150 50 -40 to +150 80 -40 to +150 80 -40 to +150 70 -40 to +150 70 -40 to +150 100 -40 to +150 100 -40 to +150 ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 1 4 V =V 5 I =0.1A, IR=0.2A, Irec.=0.05A R RRM 1 F 6 58 (Ta=25) Characteristics (Ta=25) IRRM4 trr5 VFM3 Max. Volts Max.A sec. 0.95 (IF=2.5A) 100 0.035 0.95 (IF=2.5A) 100 0.035 0.95 (IF=5A) 100 0.035 0.95 (IF=5A) 100 0.035 0.95 (IF=5A) 100 0.035 0.95 (IF=6A) 100 0.035 0.95 (IF=6A) 100 0.035 200 0.04 0.95 (IF=10A) 0.98 (IF=10A) 200 0.035 0.98 (IF=10A) 200 0.035 0.95 (IF=10A) 200 0.04 100 0.035 1.2 (IF=5A) 1.2 (IF=5A) 100 0.035 100 0.035 1.2 (IF=6A) 1.2 (IF=10A) 200 0.04 1.2 (IF=10A) 200 0.04 500 0.05 1.5 (IF=10A) 1.5 (IF=10A) 500 0.05 1.7 (IF=10A) 100 0.05 1.7 (IF=10A) 100 0.05 Package Rth (j-c) /W 5.0 5.0 2.5 2.5 2.5 2.2 2.7 2.0 2.0 2.0 1.5 2.5 2.5 2.7 1.5 2.0 1.5 2.0 3.5 1.2 TO-220AB T-pack(P) T-pack(P) T-pack(S) TO-220AB TO-3P TO-3PF TO-3PF T-pack(P) T-pack(S) TO-3P T-pack(P) T-pack(S) TO-3PF TO-3P TO-3PF TO-3P TO-3PF TO-220F TO-3P Net mass Grams 2.0 1.6 1.6 1.6 2.0 5.5 6.0 6.0 1.6 1.6 5.5 1.6 1.6 6.0 5.5 6.0 5.5 6.0 1.7 5.5 ( ) Conditions 1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 2 Sine wave, 10ms per element 3 per element 4 V =V 5 I =0.1A, IR=0.2A, Irec.=0.05A R RRM per element F 6 1 in one-package 4 /Rectifier Diodes IR Device type FDLA20C20 FDLP20C20 FDLC20C20 FDLH20C20 FDLR20C20 Low-IR Fast Recovery Diodes 2 in one-package SMD Maximum rating VRRM IO1 Volts Amps. 200 20 (Tc=117) 200 20 (Tc=126) SMD 200 20 (Tc=126) 200 20 (Tc=122) 200 20 (Tc=112) Thermal rating IFSM2 Tj and Tstg Amps. 100 -40 to +150 100 -40 to +150 100 -40 to +150 100 -40 to +150 100 -40 to +150 ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 1 4 V =V 5 I =0.1A, IR=0.2A, Irec.=0.05A R RRM 1 F (Ta=25) Characteristics (Ta=25) IRRM4 trr5 VFM3 Max. Volts Max.A sec. 20 0.045 0.98 (IF=10A) 0.98 (IF=10A) 20 0.045 0.98 (IF=10A) 20 0.045 0.98 (IF=10A) 20 0.045 0.98 (IF=10A) 20 0.045 Package Rth (j-c) /W 1.75 1.25 1.25 1.5 2.0 TO-220F TO-220AB T-pack(S) TO-3P(Q) TO-3PF Net mass Grams 1.7 2.0 1.6 5.1 6.0 ( ) Conditions 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection) 3 per element Sine wave, 10ms per element 4 V =V 5 I =0.1A, IR=0.2A, Irec.=0.05A R RRM per element F 1 2 59 4 /Rectifier Diodes 600V Ultra Fast Recovery Diodes 1 in one-package Device type FDRP15S60L FDRW15S60L FDRP25S60L FDRW25S60L FDRW35S60L SMD Maximum rating VRRM IO1 Volts Amps. 600 15 (Tc=98C) 600 15 (Tc=85C) 600 25 (Tc=86C) 600 25 (Tc=86C) 600 35 (Tc=91C) Thermal rating IFSM2 Tj and Tstg Amps. 110 -40 to +150 110 -40 to +150 125 -40 to +150 125 -40 to +150 140 -40 to +150 ( ) 1 50Hz duty=1/2 2 10ms. 1 3 I =Io F 4 V =V 5 V =30V, I =0.1 Io, -di/dt=200A/us R RRM R F FDRW50C60L FDRW70C60L TO-220AB TO-247 TO-220AB TO-247 TO-247 ( ) Conditions 50Hz Square wave duty=1/2 3 I =Io Sine wave, 10ms 1shot F 4 V =V 5 V =30V, I =0.1 Io, -di/dt=200A/us R RRM R F 2 SMD Maximum rating VRRM IO1 Volts Amps. 600 50 (Tc=86C) 600 70 (Tc=91C) Thermal rating IFSM2 Tj and Tstg Amps. 125 -40 to +150 140 -40 to +150 (Ta=25) Characteristics (Ta=25) IRRM4 trr5 VFM3 Max. Volts Max.A sec. 2.6 250 0.033 2.6 250 0.036 Package Rth (j-c) /W 0.6 0.4 TO-247 TO-247 Net mass Grams 4.9 4.9 ( ) Conditions 50Hz Square wave duty=1/2, Output Current of center tap full wave connection 3 I =0.5 Io, Rating per element Sine wave, 10ms 1shot, Rating per element F 4 V =V R RRM, Rating per element 5 V =30V, I =0.05 Io, -di/dt=200A/us, Rating per element R F 1 2 1200V Soft Recovery Fast Recovery Diodes 1 in one-package Device type FDRP12S120J FDRW12S120J FDRP20S120J FDRW20S120J FDRW30S120J SMD Maximum rating VRRM IO1 Volts Amps. 1200 12 (Tc=100C) 1200 12 (Tc=97C) 1200 20 (Tc=98C) 1200 20 (Tc=88C) 1200 30 (Tc=89C) Thermal rating IFSM2 Tj and Tstg Amps. 100 -40 to +150 100 -40 to +150 120 -40 to +150 120 -40 to +150 150 -40 to +150 ( ) 1 50Hz duty=1/2 2 10ms. 1 3 I =Io F 4 V =V 5 V =30V, I =0.1 Io, -di/dt=200A/us R RRM R F (Ta=25) Characteristics (Ta=25) IRRM4 trr5 VFM3 Max. Volts Max.A sec. 2.8 250 0.042 2.8 250 0.042 2.8 250 0.055 2.8 250 0.055 2.8 250 0.063 Package Rth (j-c) /W 1.5 1.6 1.0 1.2 0.781 TO-220AB TO-247 TO-220AB TO-247 TO-247 Net mass Grams 2.0 4.9 2.0 4.9 4.9 ( ) Conditions 50Hz Square wave duty=1/2 3 I =Io Sine wave, 10ms 1shot F 4 V =V 5 V =30V, I =0.1 Io, -di/dt=200A/us R RRM R F 1 2 2 in one-package Device type FDRW40C120J FDRW60C120J SMD Maximum rating VRRM IO1 Volts Amps. 1200 40 (Tc=98C) 1200 60 (Tc=87C) Thermal rating IFSM2 Tj and Tstg Amps. 120 -40 to +150 150 -40 to +150 ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 I =0.5 Io, 1 F 4 V =V R RRM 1 5 V =30V, I =0.05 Io, -di/dt=200A/us, 1 R F 60 Rth (j-c) /W 1.6 2.0 1.2 1.2 0.8 Net mass Grams 2.0 4.9 2.0 4.9 4.9 1 ( ) 1 50Hz duty=1/2 () 2 10ms. 1 3 I =0.5 Io, 1 F 4 V =V R RRM 1 5 V =30V, I =0.05 Io, -di/dt=200A/us, 1 R F Package 2 in one-package Device type (Ta=25) Characteristics (Ta=25) IRRM4 trr5 VFM3 Max. Volts Max.A sec. 2.6 250 0.031 2.6 250 0.031 2.6 250 0.033 2.6 250 0.033 2.6 250 0.036 (Ta=25) Characteristics (Ta=25) IRRM4 trr5 VFM3 Max. Volts Max.A sec. 2.8 250 0.055 2.8 250 0.063 Package Rth (j-c) /W 0.5 0.397 TO-247 TO-247 Net mass Grams 4.9 4.9 ( ) Conditions 50Hz Square wave duty=1/2, Output Current of center tap full wave connection 3 I =0.5 Io, Rating per element Sine wave, 10ms 1shot, Rating per element F 4 V =V R RRM, Rating per element 5 V =30V, I =0.05 Io, -di/dt=200A/us, Rating per element R F 1 2