SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC846 BC848 BC850 ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC847 BC849 COMPLEMENTARY TYPES BC846AZ1A BC848B1K BC846 BC856 BC846B1B BC848CZ1L BC847 BC857 BC847AZ1E BC849B2B BC848 BC858 BC847B1F BC849C2C BC849 BC859 BC847C1GZ BC850B2FZ BC850 BC860 BC848A1JZ BC850C-Z2G E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range VCBO VCES VCEO VEBO IC ICM IBM IEM Ptot Tj:Tstg BC846 BC847 80 80 65 50 50 45 BC848 BC849 30 30 30 30 30 30 5 6 BC850 50 50 45 100 200 200 200 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Max Collector Cut-Off Current ICBO Max Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Typ 900 Min Typ Max 580 660 700 UNIT CONDITIONS. nA VCB = 30V VCB = 30V A Tamb=150C mV IC=10mA, mV IB=0.5mA mV IC=100mA, mV IB=5mA mV IC=10mA* mV mV IC=10mA, IB=0.5mA mV IC=100mA, IB=5mA mV IC=2mA mV VCE=5V mV Max 770 mV VCE(sat) Typ Max. Typ Max. Typ Max. VBE(sat) Typ VBE UNIT V V V V mA mA mA mA mW C BC846 BC847 BC848 BC849 BC850 15 5 90 250 200 600 300 600 700 IC=10mA VCE=5V * Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current. BC846 BC848 BC850 BC847 BC849 ELECTRICAL CHARACTERISTICS (Continued) ELECTRICAL CHARACTERISTICS (Continued) PARAMETER SYMBOL Dynamic Group VI Characteristics hie Group A Group B BC846 BC847 BC848 BC849 BC850 Group C Group VI Group A Group B Group C hre Group VI hfe Group A Group B 0.4 1.2 2.2 0.4 1.2 2.2 0.4 1.2 2.2 k k k Min Typ Max 1.6 2.7 4.5 1.6 2.7 4.5 1.6 2.7 4.5 k k k 3.2 4.5 8.5 6 8.7 15 6 8.7 15 6 8.7 15 k k k Typ Typ Typ Typ 2.5 1.5 2 2.5 1.5 2 2.5 1.5 2 3 2 3 2 3 x10-4 x10-4 x10-4 x10-4 Min Typ Max 75 110 150 75 110 150 75 110 150 Min Typ Max 125 220 260 125 220 260 125 220 260 240 330 500 Min Typ Max 450 600 900 450 600 900 450 600 900 450 600 900 Typ Max 20 40 20 40 20 40 s s Group A Typ Max 18 30 18 30 18 30 s s Group B Typ Max 30 60 Group C Typ Max Group VI hoe s s 60 110 PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 Static Group VI Forward Current Ratio hFE 75 110 150 75 110 150 Group A hFE k k k Min Typ Max Min Typ Max Group C UNIT CONDITIONS. Min Typ Max Min Typ Max BC846 BC848 BC850 60 110 60 110 Group B Group C VCE=5V Ic=2mA hFE hFE Min Typ Max 75 110 150 BC847 BC849 UNIT CONDITIONS. IC=2mA, VCE=5V Typ 90 90 90 IC=0.01mA, VCE=5V Min Typ Max 110 180 220 110 180 220 110 180 220 IC=2mA, VCE=5V Typ 120 120 120 IC=100mA, VCE=5V Typ 150 IC=0.01mA, VCE=5V Min Typ Max 200 290 450 IC=2mA, VCE=5V Typ 200 200 200 IC=100mA, VCE=5V Typ. 270 270 270 270 IC=0.01mA, VCE=5V Min Typ Max 420 500 800 420 500 800 420 500 800 420 500 800 IC=2mA, VCE=5V Typ 400 IC=100mA, VCE=5V Transition Frequency fT Typ 300 MHz IC=10mA, VCE=5V f=100MHz Collector-Base Capacitance Cobo Typ Max 2.5 4.5 pF pF VCB=10V f=1MHz Emitter-Base Capacitance Cib0 Typ 9 pF VEB=0.5V f=1MHz Noise Figure N Typ Max 2 10 2 10 2 10 1.2 4 1 4 dB dB VCE = 5V, IC=200A, RG=2k, f=1kHz, f=200Hz Typ Max 1.2 4 1 3 dB dB VCE = 5V, IC=200A, RG=2k, f=30Hz to 15kHz at -3dB points Max. 110 110 nV VCE = 5V, IC=200A, RG=2k, f=10Hz to 50Hz at -3dB points Equivalent Noise Voltage en s s Spice parameter data is available upon request for this device BC846 BC848 BC850 BC847 BC849 ELECTRICAL CHARACTERISTICS (Continued) ELECTRICAL CHARACTERISTICS (Continued) PARAMETER SYMBOL Dynamic Group VI Characteristics hie Group A Group B BC846 BC847 BC848 BC849 BC850 Group C Group VI Group A Group B Group C hre Group VI hfe Group A Group B 0.4 1.2 2.2 0.4 1.2 2.2 0.4 1.2 2.2 k k k Min Typ Max 1.6 2.7 4.5 1.6 2.7 4.5 1.6 2.7 4.5 k k k 3.2 4.5 8.5 6 8.7 15 6 8.7 15 6 8.7 15 k k k Typ Typ Typ Typ 2.5 1.5 2 2.5 1.5 2 2.5 1.5 2 3 2 3 2 3 x10-4 x10-4 x10-4 x10-4 Min Typ Max 75 110 150 75 110 150 75 110 150 Min Typ Max 125 220 260 125 220 260 125 220 260 240 330 500 Min Typ Max 450 600 900 450 600 900 450 600 900 450 600 900 Typ Max 20 40 20 40 20 40 s s Group A Typ Max 18 30 18 30 18 30 s s Group B Typ Max 30 60 Group C Typ Max Group VI hoe s s 60 110 PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 Static Group VI Forward Current Ratio hFE 75 110 150 75 110 150 Group A hFE k k k Min Typ Max Min Typ Max Group C UNIT CONDITIONS. Min Typ Max Min Typ Max BC846 BC848 BC850 60 110 60 110 Group B Group C VCE=5V Ic=2mA hFE hFE Min Typ Max 75 110 150 BC847 BC849 UNIT CONDITIONS. IC=2mA, VCE=5V Typ 90 90 90 IC=0.01mA, VCE=5V Min Typ Max 110 180 220 110 180 220 110 180 220 IC=2mA, VCE=5V Typ 120 120 120 IC=100mA, VCE=5V Typ 150 IC=0.01mA, VCE=5V Min Typ Max 200 290 450 IC=2mA, VCE=5V Typ 200 200 200 IC=100mA, VCE=5V Typ. 270 270 270 270 IC=0.01mA, VCE=5V Min Typ Max 420 500 800 420 500 800 420 500 800 420 500 800 IC=2mA, VCE=5V Typ 400 IC=100mA, VCE=5V Transition Frequency fT Typ 300 MHz IC=10mA, VCE=5V f=100MHz Collector-Base Capacitance Cobo Typ Max 2.5 4.5 pF pF VCB=10V f=1MHz Emitter-Base Capacitance Cib0 Typ 9 pF VEB=0.5V f=1MHz Noise Figure N Typ Max 2 10 2 10 2 10 1.2 4 1 4 dB dB VCE = 5V, IC=200A, RG=2k, f=1kHz, f=200Hz Typ Max 1.2 4 1 3 dB dB VCE = 5V, IC=200A, RG=2k, f=30Hz to 15kHz at -3dB points Max. 110 110 nV VCE = 5V, IC=200A, RG=2k, f=10Hz to 50Hz at -3dB points Equivalent Noise Voltage en s s Spice parameter data is available upon request for this device