VCES
VGES
IC
ICP
-IC
-IC pulse
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
7MBR30U2A060 IGBT Modules
IGBT MODULE (U series)
600V / 30A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless ptherwise specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Converter Brake Inverter
Continuous
1ms
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
600
±20
30
60
30
60
133
600
±20
20
40
104
600
800
30
210
221
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
V
V
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
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VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=30mA
VGE=15V
Ic=30A
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=30A
VGE=±15V
RG=120
VGE=0V
IF=30A
IF=30A
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
IC=20A
VGE=15V
VCC=300V
IC=20A
VGE=±15V
RG=150
VR=600V
IF=30A terminal
VGE=0V chip
VR=800V
T=25°C
T=100°C
T=25/50°C
1.0
200
6.2 6.7 7.7
2.10 2.40
2.40
1.85
2.15
1.7
0.36 1.20
0.20 0.60
0.05
0.45 1.20
0.04 0.45
2.10 2.65
2.00
1.85
1.75
0.35
1.0
200
1.85 2.15
2.15
1.70
2.00
0.45 1.20
0.15 0.60
0.37 1.20
0.04 0.45
1.0
1.20 1.50
1.10
1.0
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
µs
mA
V
mA
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
0.94
1.60
1.20 °C/W
1.20
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module 7MBR30U2A060
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
5000
465 495 520
3305 3375 3450
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
89
[Thermistor]
[Converter] 21(P)
23(N)
1(R) 2(S) 3(T)
[Brake] [Inverter]
22(P1)
7(B)
14(Gb)
24(N1)
20(Gu)
19(Eu)
13(Gx)
18(Gv)
17(Ev)
4(U)
12(Gy)
5(V) 6(W)
16(Gw)
11(Gz)
10(En)
15(Ew)
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IGBT Module 7MBR30U2A060
Characteristics (Representative)
Vcc=300V, Ic=30A, Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
[ Inverter ] [ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ] [ Inverter ]
[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
20
40
60
80
012345
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
VGE=20V 15V 12V
10V
8V
0
20
40
60
80
012345
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
VGE=20V 15V 12V
10V
8V
0
20
40
60
80
01234
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
T
j
=125°CTj=2C
0
2
4
6
8
10
5 10152025
Gate-Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [ V ]
Ic=60A
Ic=30A
Ic=15A
0.01
0.10
1.00
10.00
0102030
Collector-Emitter voltage : VCE [ V ]
Capasitance : Cies, Coes, Cres [ nF ]
Cies
Coes
Cres
0
100
200
300
400
500
0 20 40 60 80 100 120 140
0
5
10
15
20
25
Collector-Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
VGE
VCE
G
ate -
E
m
i
tter vo
l
ta
g
e :
VGE
[
V
]
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IGBT Module 7MBR30U2A060
+VGE=15V,-VGE <= 15V, RG >= 120 ,Tj <= 125°C
Switching time vs. Gate resistance (typ.)
Vcc=300V, VGE=±15V, Rg=120
Switching loss vs. Gate resistance (typ.)
[ Inverter ] [ Inverter ]
Vcc=300V, Ic=30A, VGE=±15V, Tj= 25°C
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
Vcc=300V, Ic=30A, VGE=±15V, Tj= 125°C
[ Inverter ] [ Inverter ]
[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=120, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=120, Tj=125°C
10
100
1000
0204060
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec
]
toff
ton
tf
tr
10
100
1000
0 204060
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec
]
ton
toff
tr
tf
10
100
1000
10000
10 100 1000 10000
Gate resistance : Rg [ ]
Switching time : ton, tr, toff, tf [ nsec
]
tr
tf
toff
ton
0
1
2
3
0204060
Collector current : Ic [ A ]
Switching loss : Eon, Eoff, Err [ mJ/pulse
]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
2
4
6
8
10
12
10 100 1000 10000
Gate resistance : Rg [ ]
Switching loss : Eon, Eoff, Err [ mJ/pulse
]
Eoff
Err
Eon
0
20
40
60
80
0 200 400 600 800
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
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IGBT Module 7MBR30U2A060
Forward current vs. Forward on voltage (typ.)
Transient thermal resistance (max.)
[ Inverter ] [ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=120
Forward current vs. Forward on voltage (typ.)
chip
chip
[ Converter ]
[ Thermistor ]
Temperature characteristics (typ.)
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Resistance : R [ k ]
0
20
40
60
80
0.0 1.0 2.0 3.0 4.0
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
T
j
=12C
Tj=25°C
1
10
100
1000
0204060
Forward current : IF [ A ]
Reverse recovery current : Irr [ A
]
Reverse recovery time : trr [ nsec
]
trr (125°C)
trr (25°C)
Irr (125°C)
Irr (25°C)
0.010
0.100
1.000
10.000
0.001 0.010 0.100 1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD
[
Inverter
]
IGBT[Brake],Conv.Diod
IGBT[Inverter]
0
20
40
60
80
0.0 0.5 1.0 1.5 2.0
Forward on voltage : VFM [ V ]
Forward current : IF [ A ]
T
j
=12C Tj=25°C
Temperature [ °C ]
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IGBT Module 7MBR30U2A060
Vcc=300V, Ic=20A, Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
[ Brake ] [ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Brake ] [ Brake ]
[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
10
20
30
40
50
012345
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
VGE=20V 15V 12V
10V
8V
0
10
20
30
40
50
012345
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
VGE=20V 15V 12V
10V
8V
0
10
20
30
40
50
01234
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
510152025
Gate-Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [ V ]
Ic=40A
Ic=20A
Ic=10A
0.01
0.10
1.00
10.00
0 102030
Collector-Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ nF ]
Cies
Coes
Cres
0
100
200
300
400
500
04080120
Gate charge : Qg [ nC ]
Collector-Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
VGE
VCE
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IGBT Module 7MBR30U2A060
Outline Drawings, mm
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