6FL(R), 12FL(R), 16FL(R) Series Vishay Semiconductors Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A FEATURES * Short reverse recovery time * Low stored charge * Wide current range * Excellent surge capabilities * Standard JEDEC types * Stud cathode and stud anode versions * Fully characterized reverse recovery conditions DO-203AA (DO-4) * Compliant to RoHS directive 2002/95/EC TYPICAL APPLICATIONS * DC power supplies * Inverters PRODUCT SUMMARY IF(AV) * Converters 6 A/12 A/16 A * Choppers * Ultrasonic systems * Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS TC = 100 C I2t UNITS 6 12 16 A A 9.5 19 25 145 180 60 Hz 115 150 190 50 Hz 60 103 160 60 Hz 55 94 150 1452 1452 2290 A Range trr TJ 16FL.. 110 I2t VRRM 12FL.. 50 Hz IF(RMS) IFSM 6FL.. Range Document Number: 93138 Revision: 12-May-09 A2 s I2s 50 to 1000 V See Recovery Characteristics table ns - 65 to 150 C For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 6FL(R), 12FL(R), 16FL(R) Series Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 5 50 75 10 100 150 20 200 275 40 400 500 60 600 725 80 800 950 100 1000 1250 6FL.. 12FL.. 16FL.. IRRM MAXIMUM AT TJ = 25 C A IRRM MAXIMUM AT TJ = 100 C mA IRRM MAXIMUM AT TJ = 150 C mA 50 - 6.0 FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS current SYMBOL IF(AV) TEST CONDITIONS 180 conduction, half sine wave DC IF(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum forward voltage drop I2t VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = 150 C 100 % VRRM reapplied 6FL.. 6 12FL.. 12 (1) 16FL.. UNITS 16 A C 100 100 100 9.5 19 25 130 170 215 135 180 225 110 145 180 115 150 (1) A 190 86 145 230 78 130 210 60 103 160 55 94 150 t = 0.1 ms to 10 ms, no voltage reapplied 856 1452 2290 TJ = 25 C; IF = Rated IF(AV) (DC) 1.4 1.4 (1) 1.4 TC = 100 C; IFM = x rated IF(AV) 1.5 1.5 (1) 1.5 A2s A2s V Note (1) JEDEC registered values www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93138 Revision: 12-May-09 6FL(R), 12FL(R), 16FL(R) Series Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A Vishay Semiconductors RECOVERY CHARACTERISTICS PARAMETER SYMBOL Maximum reverse recovery time Maximum peak recovery current trr IRM(REC) 6FL.. 12FL.. 16FL.. TEST CONDITIONS TJ = 25 C, IF = 1 A to VR = 30 V, dIF/dt = 100 A/s TJ = 25 C, dIF/dt = 25 A/s, IFM = x rated IF(AV) UNITS S02 S05 - - 200 500 ns IFM = x rated IF(AV) - IFM trr t dir dt - Qrr IRM(REC) Maximum reverse recovery charge TJ = 25 C, IF = 1 A to VR = 30 V, dIF/dt = 100 A/s - nC Qrr TJ = 25 C, dIF/dt = 25 A/s, IFM = x rated IF(AV) - - Note (1) JEDEC registered values THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range SYMBOL TEST CONDITIONS 6FL.. 12FL.. TJ - 65 to 150 Maximum storage temperature range TStg - 65 to 175 Maximum thermal resistance, junction to case RthJC DC operation Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 16FL.. UNITS C 2.5 2.0 C/W 0.5 Not lubricated threads 1.5 + 0 - 10 % (13) Lubricated threads 1.2 + 0 - 10 % (10) Allowable mounting torque 1.6 N*m (lbf * in) 7 g 0.25 oz. Approximate weight Case style Document Number: 93138 Revision: 12-May-09 JEDEC For technical questions, contact: ind-modules@vishay.com DO-203AA (DO-4) www.vishay.com 3 6FL(R), 12FL(R), 16FL(R) Series Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A Vishay Semiconductors RthJC CONDUCTION 6FL.. 12FL.. 16FL.. 6FL.. 12FL.. 16FL.. CONDUCTION ANGLE SINUSOIDAL CONDUCTION TEST CONDITIONS UNITS TJ = 150 C K/W RECTANGULAR CONDUCTION 180 0.58 0.46 0.37 0.33 0.26 0.21 120 0.60 0.48 0.39 0.58 0.46 0.37 60 1.28 1.02 0.82 1.28 1.02 0.82 30 2.20 1.76 1.41 2.20 1.76 1.41 160 160 150 150 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 140 DC 130 120 110 100 180 C 90 180 C 120 C 60 C 80 140 DC 130 180 C 120 110 100 180 C 120 C 60 C 90 80 70 70 60 60 0 1 2 3 4 5 6 7 8 9 0 10 5 Average Forward Current (A) 15 20 25 30 Fig. 3 - Average Forward Current vs. Maximum Allowable Case Temperature, 16FL Series Fig. 1 - Average Forward Current vs. Maximum Allowable Case Temperature, 6FL Series 160 IF 150 Maximum Allowable Case Temperature (C) 10 Average Forward Current (A) dIF dt 140 IFM I 130 DC 120 trr t 110 %IRM(REC) 100 180 C 90 80 70 60 0 2 4 6 8 10 12 14 16 18 20 Average Forward Current (A) Fig. 2 - Average Forward Current vs. Maximum Allowable Case Temperature, 12FL Series www.vishay.com 4 Qrr IRM(REC) 180 C 120 C 60 C IF, IFM - Peak forward current prior to commutation -dIF/dt - Rate of fall of forward current IRM(REC) - Peak reverse recovery current trr - Reverse recovery time Qrr - Reverse recovered charge Fig. 4 - Reverse Recovery Time Test Waveform For technical questions, contact: ind-modules@vishay.com Document Number: 93138 Revision: 12-May-09 6FL(R), 12FL(R), 16FL(R) Series Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A 6 R - K/W O = 180 120 60 30 7 Conduction angle - O 8 R 180 0.58 30 - R 120 0.60 60 1.28 30 2.20 thS - R 15 A =1 0- - R 20 - 5 8 R 12 6 - 7- - R R R R R - 6FL... TJ = 150 C 9 5 Maximum Average Forward Power Loss (W) 10 Vishay Semiconductors K/ W RMS limit 4 3 2 No heatsi nk O Conduction angle 1 0 0 1 2 3 4 5 6 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Maximum Allowable Ambient Temperature (C) Fig. 5 - Current Rating Nomogram (Sinusoidal Waveforms), 6FL Series R - K/W 8 DC 0 180 0.33 30 - R 120 0.58 60 1.28 30 2.20 A =8 10 DC 6 RMS limit 4 2 O - 4R R 12 - R 15 R 20 R thS O = 180 120 60 30 5 Conduction angle - O 10 6- R R - RK /W - R R - 6FL... TJ = 150 C 12 3 Maximum Average Forward Power Loss (W) 14 No heatsink Conduction angle 0 0 1 3 2 4 5 6 7 8 9 10 10 20 30 40 50 60 70 90 100 80 16 5- 6- O = 180 120 60 30 14 12 10 R 10 - R RMS limit 8 2 3 thS A R 8- 12 - R R =4 - R - R K/ W - R R - 12FL... TJ = 150 C 18 1 Maximum Average Forward Power Loss (W) 20 4 0.46 120 0.48 60 1.02 30 1.76 30 - R O Conduction angle 2 180 R 15 - R 20 - R 6 R - K/W Maximum Allowable Ambient Temperature (C) Fig. 6 - Current Rating Nomogram (Rectangular Waveforms), 6FL Series Conduction angle - O Average Forward Current (A) No heatsink 0 0 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Maximum Allowable Ambient Temperature (C) Fig. 7 - Current Rating Nomogram (Sinusoidal Waveforms), 12FL Series Document Number: 93138 Revision: 12-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 6FL(R), 12FL(R), 16FL(R) Series R 12FL... TJ = 150 C thS 25 3- O = 180 120 60 30 20 15 5- DC 5 R 4- R 8- R 10 - R 15 - R 20 - R RMS limit 10 =2 A 1. 0 - R 0. - R 5 K/ W - R R 6- R R - K/W Maximum Average Forward Power Loss (W) 30 Conduction angle - O Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A Vishay Semiconductors DC 0 180 0.26 120 0.46 60 1.02 30 1.76 O Conduction angle No heatsink 0 0 2 6 4 8 10 12 14 16 18 20 10 20 30 40 50 60 70 90 100 80 20 5- O = 180 120 60 30 15 2 R 4- R 6R 10 RMS limit 10 thS A R =3 1. - 5 - R R - R K/ R - 16FL... TJ = 150 C 1 Maximum Average Forward Power Loss (W) 25 W 8- R R 15 - R 5 20 - R O Conduction angle R - K/W Maximum Allowable Ambient Temperature (C) Fig. 8 - Current Rating Nomogram (Rectangular Waveforms), 12FL Series Conduction angle - O Average Forward Current (A) 180 0.37 120 0.39 60 0.82 30 1.41 0 0 2 4 6 8 10 12 14 10 16 20 30 40 50 60 70 80 90 100 Maximum Average Forward Power Loss (W) 35 1.5 16FL... TJ = 150 C 30 R O = 180 120 60 30 25 20 thS A =3 4- RMS limit 15 2- 5- R 8- R DC - R 1. 0 R 0. 5 - R - R - RK /W R 6- R 10 - R 10 5 15 - R O Conduction angle R - K/W Maximum Allowable Ambient Temperature (C) Fig. 9 - Current Rating Nomogram (Sinusoidal Waveforms), 16FL Series Conduction angle - O Average Forward Current (A) DC 0 180 0.21 120 0.37 60 0.82 30 1.41 0 0 5 10 15 20 25 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Maximum Allowable Ambient Temperature (C) Fig. 10 - Current Rating Nomogram (Rectangular Waveforms), 16FL Series www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93138 Revision: 12-May-09 6FL(R), 12FL(R), 16FL(R) Series 103 102 10 TJ = 150 C TJ = 25 C O = 180 120 60 30 102 O O = DC 180 120 60 30 O 10 TJ = 150 C 1 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 102 10 103 Instantaneous Forward Voltage (V) Average Forward Current (A) Fig. 11 - Maximum Forward Voltage vs. Forward Current, 6FL Series Fig. 14 - Maximum High Level Forward Power Loss vs. Average Forward Current, 12FL Series Instantaneous Forward Current (A) 103 6FL... Maximum Average Forward Power Loss (W) 12FL... 6FL... 0 O = 180 120 60 30 102 O O = DC 180 120 60 30 O 10 TJ = 150 C 1 1 102 10 103 16FL.. 102 TJ = 150 C 10 TJ = 25 C 1 103 0 Average Forward Current (A) 103 103 16FL... Maximum Average Forward Power Loss (W) 12FL.. 102 10 TJ = 150 C TJ = 25 C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 15 - Maximum Forward Voltage vs. Forward Current, 16FL Series Fig. 12 - Maximum High Level Forward Power Loss vs. Average Forward Current, 6FL Series Instantaneous Forward Current (A) Vishay Semiconductors 103 Maximum Average Forward Power Loss (W) Instantaneous Forward Current (A) Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A O = 180 120 60 30 102 O = DC 180 120 60 30 O 10 O TJ = 150 C 1 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 13 - Maximum Forward Voltage vs. Forward Current, 12FL Series Document Number: 93138 Revision: 12-May-09 1 10 102 103 Average Forward Current (A) Fig. 16 - Maximum High Level Forward Power Loss vs. Average Forward Current, 16FL Series For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 6FL(R), 12FL(R), 16FL(R) Series Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A Vishay Semiconductors 105 600 500 400 300 200 TJ = 25 C 6FL... 100 12FL... 60 50 40 30 16FL... IF = 1 A 6FL...S02 12FL...S02 16FL...S02 20 104 TJ = 150 C IF = x rated IF(AV) 103 16FL... 12FL... 6FL... 102 IF = 1 A TJ = 25 C 10 1 6FL...S05 12FL...S05 16FL...S05 IF = x rated IF(AV) Recovered Charge (nC) Reverse Recovery Time (ns) TJ = 150 C 3 10 30 10 100 1 Rate of Fall of Forward Current (A/s) 3 10 30 100 Rate of Fall of Forward Current (A/s) Fig. 18b - Typical Recovered Charge vs. Rate of Fall of Forward Current, All Series ...S05 Fig. 17a - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, All Series ...S02 6FL...S02 12FL...S02 16FL...S02 103 TJ = 150 C IF = x rated IF(AV) 102 16FL... 12FL... 6FL... IF = 1 A 10 TJ = 25 C Reverse Recovery Time (ns) Recovered Charge (nC) 104 IF = x rated IF(AV) 2000 1000 TJ = 25 C 600 500 400 300 6FL... 12FL... 16FL... 6FL...S10 12FL...S10 16FL...S10 200 IF = 1 A 100 1 1 3 10 30 1 100 Recovered Charge (nC) IF = x rated IF(AV) TJ = 25 C 6FL... 200 12FL... 16FL... IF = x rated IF(AV) 104 103 12FL... 6FL... 100 3 10 30 100 Rate of Fall of Forward Current (A/s) Fig. 18a - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, All Series ...S05 www.vishay.com 8 16FL... IF = 1 A TJ = 25 C 102 6FL...S10 12FL...S10 16FL...S10 IF = 1 A 1 100 TJ = 150 C 1000 600 500 400 300 30 105 TJ = 150 C 2000 10 Fig. 19a - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, All Series ...S10 6FL...S05 12FL...S05 16FL...S05 3000 3 Rate of Fall of Forward Current (A/s) Rate of Fall of Forward Current (A/s) Fig. 17b - Typical Recovered Charge vs. Rate of Fall of Forward Current, All Series ...S02 Reverse Recovery Time (ns) TJ = 150 C 6000 5000 4000 3000 10 1 3 10 30 100 Rate of Fall of Forward Current (A/s) Fig. 19b - Typical Recovered Charge vs. Rate of Fall of Forward Current, All Series ...S10 For technical questions, contact: ind-modules@vishay.com Document Number: 93138 Revision: 12-May-09 6FL(R), 12FL(R), 16FL(R) Series Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A 140 200 At any rated load condition and with rated VRRM applied following surge. 100 80 60 60 Hz 40 50 Hz At any rated load condition and with rated VRRM applied following surge. Peak Half Sine Wave Forward Current (A) 120 Peak Half Sine Wave Forward Current (A) Vishay Semiconductors 150 60 Hz 100 50 Hz 50 20 0 0 1 2 4 6 8 10 20 1 40 60 2 4 6 8 10 20 40 60 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 22 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 16FL Series Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 20 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 6FL Series Peak Half Sine Wave Forward Current (A) 150 100 60 Hz 50 Hz 50 0 1 2 4 6 8 10 20 40 60 Transient Thermal Impedance Junction to Case (C/W) 10 At any rated load condition and with rated VRRM applied following surge. 6FL... 16FL... 1 12FL... 10-1 10-3 10-2 10-1 1 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Square Wave Pulse Duration (s) Fig. 21 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 12FL Series Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series Document Number: 93138 Revision: 12-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 6FL(R), 12FL(R), 16FL(R) Series Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code 16 F L R 60 M S02 1 2 3 4 5 6 7 1 - Current code I(AVG) = Exact current rating 2 - F = Diode 3 - Omit = Standard recovery diode L = Only for fast diode 4 - Omit = Stud forward polarity R = Stud reverse polarity 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - Outlines: Omit = Stud base UNF thread M = Stud base metric thread 7 - trr code only for fast diode (see Recovery Characteristics table) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 10 www.vishay.com/doc?95311 For technical questions, contact: ind-modules@vishay.com Document Number: 93138 Revision: 12-May-09 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL DIMENSIONS FOR 40HFL/70HFL in millimeters (inches) O 14.6 (0.57) 6.1/7 (0.24/0.27) 4 (0.16) 4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45) 11.1 0.4 (0.44 0.02) 1/4" 28UNF-2A for metric devices: M6 x 1 1.20 (0.04) Document Number: 95312 Revision: 29-Sep-08 17.40 (0.68) For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL DIMENSIONS FOR 85HFL in millimeters (inches) O 15 (0.59) 6.1/7 (0.24/0.27) 4 (0.16) 4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45) 11.1 0.4 (0.44 0.02) 1/4" 28UNF-2A for metric devices: M6 x 1 1.20 (0.04) www.vishay.com 2 17.35 (0.68) For technical questions, contact: indmodules@vishay.com Document Number: 95312 Revision: 29-Sep-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000