SILICON NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9157
Issue 1
Page 1 of 2
2N3767
• Low Saturation Voltage
• High Gain Characteristics
• Hermetic TO66 Metal Package
• High Reliability Screening Options Available
• Switching and Medium Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 100V
VCEO Collector – Emitter Voltage 80V
VEBO Emitter – Base Voltage 6.0V
IC Continuous Collector Current 4.0A
IB Base Current 2.0A
PT Total Power Dissipation at TC = 25°C 25W
De-rate Above TC = 25°C 143mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min.
Typ. Max.
Unit
RθJC
Thermal Resistance, Junction To Case 7.0 °C/W
SILICON NPN TRANSISTOR
2N3767
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9157
Issue 1
Page 2 of 2
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Unit
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 100mA IB = 0 80 V
ICEO Collector-Emitter Cut off
Current VCE = 80V 500
IEBO Emitter-Base Cut-Off Current VEB = 6.0V IC = 0 500
VCE = 100V VBE = -1.5V 10
µA
VCE = 70V VBE = -1.5V
ICEX Collector-Emitter Cut-Off
Current
TA = 150°C 1.0 mA
ICBO Collector-Base Cut-Off Current VCB = 100V IE = 0 10 µA
VBE
(1)
Base-Emitter Voltage VCE = 10V IC = 1.0A 1.5 V
IC = 50mA VCE = 5V 30
IC = 500mA VCE = 5V 40 160
TA = -55°C 13
hFE
(1)
DC Current Gain
IC = 1.0A VCE = 10V 20
IC = 500mA IB = 50mA 1.0
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage IC = 1.0A IB = 100mA 2.5
VBE(sat)
(1)
Base-Emitter
Saturation Voltage IC = 1.0A IB = 100mA 1.5
V
DYNAMIC CHARACTERISTICS
IC = 500mA VCE = 10V
|hfe| Magnitude of Small-Signal
Short-Circuit Current Gain f = 10MHz
1.0 8.0
VCB = 10V IE = 0
Cobo
Output Capacitance f = 1.0MHz 50 pF
ton Turn On Time VCC = 30V IC = 500mA 0.25
toff Turn Off Time IB1 = 50mA IB2 = - IB1 2.5
µs
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
MECHANICAL DATA
Dimensions in mm (inches)
TO66 (TO
-
213AA) METAL PACKAGE
Underside View
Underside ViewUnderside View
Underside View
PIN 1 - Base PIN 2 - Emitter Case - Collector
24.13 (0.95)
24.63 (0.97)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
4.08(0.161)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
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