© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C40 A
IC110 TC= 110°C20 A
ICM TC= 25°C, 1ms 120 A
SSOA VGE= 15V, TJ = 125°C, RG = 10Ω ICM = 40 A
(RBSOA) Clamped Inductive Load @VCE ≤ ≤
≤ ≤
≤ 960 V
PCTC= 25°C 180 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting Torque (TO-247 & TO-220) 1.13/10 Nm/lb.in.
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC= 250μA, VGE = 0V 1200 V
VGE(th) IC= 250μA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES, VGE = 0V 25 μA
TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC = 20A, VGE = 15V, Note 1 2.3 2.5 V
TJ = 125°C 2.5 V
DS100046A(11/09)
GenX3TM 1200V IGBTs VCES = 1200V
IC110 = 20A
VCE(sat) ≤≤
≤≤
≤ 2.5V
Ultra-Low Vsat PT IGBTs for
up to 3 kHz Switching
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
Features
zOptimized for Low Conduction Losses
zInternational Standard Packages
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
zInrush Current Protection Circuits
G = Gate C = Collector
E = Emitter Tab = Collector
TO-263 AA (IXGA)
G
E
C (Tab)
GCE
TO-220AB (IXGP)
C (Tab)
TO-247 (IXGH)
C (Tab)
GCE
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 20A, VCE = 10V, Note 1 7 12 S
Cies 1075 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 80 pF
Cres 27 pF
Qg 50 nC
Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES 7.3 nC
Qgc 23 nC
td(on) 16 ns
tri 44 ns
Eon 2.85 mJ
td(off) 290 ns
tfi 715 ns
Eoff 6.47 mJ
td(on) 16 ns
tri 50 ns
Eon 5.53 mJ
td(off) 310 ns
tfi 1220 ns
Eoff 10.10 mJ
RthJC 0.69 °C/W
RthCK TO-220 0.50 °C/W
TO-247 0.21 °C/W
Inductive Load, TJ = 125°°
°°
°C
IC = 20A, VGE = 15V
VCE = 960V, RG = 10Ω
Note 2
Inductive Load, TJ = 25°°
°°
°C
IC = 20A, VGE = 15V
VCE = 960V, RG = 10Ω
Note 2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Collector
3 - Emitter 4 - Collector
TO-220 (IXGP) Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 (IXGH) AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
0 4 8 12 16 20 24 28 32
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
7V
9V
11V
13V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Tem perature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 10A
Fi g . 5. C o l l ecto r -to -Emitter Vo l tag e
vs. Gate-to -Emitter Vo l tag e
1.5
2.5
3.5
4.5
5.5
6.5
7.5
56789101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 40
A
T
J
= 25ºC
10
A
20
A
Fig. 6. Input Adm ittance
0
5
10
15
20
25
30
35
40
45
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
- Amperes
T
J
= - 40ºC
25ºC
125ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R everse-B ias Safe Oper ati ng Area
0
5
10
15
20
25
30
35
40
45
200 300 400 500 600 700 800 900 1000 1100 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10Ω
dv / dt < 10V / ns
Fi g . 11. Maximu m Tr an sien t Ther mal Imped an ce
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig . 8. Gate Ch arg e
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 20A
I
G
= 10 mA
Fi g . 9. C apaci tan ce
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1MHz
Cies
Coes
Cres
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 12. Inductive Switching Energy Loss
vs. Gate R esistance
8
10
12
14
16
18
20
22
24
26
10 15 20 25 30 35 40 45 50
R
G
- Ohms
E
off
- MilliJoules
2
4
6
8
10
12
14
16
18
20
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Ti mes
vs. Junction Temperature
600
700
800
900
1000
1100
1200
1300
1400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
270
280
290
300
310
320
330
340
350
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10Ω
, V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 15. Inductive Turn-off Switching Ti mes
vs. Gate R esi stan ce
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
10 15 20 25 30 35 40 45 50
R
G
- Ohms
t
f
- Nanoseconds
150
200
250
300
350
400
450
500
550
600
650
700
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss
vs. Col l ector C u rren t
4
6
8
10
12
14
16
18
20
22
24
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
E
off
- MilliJoules
2
3
4
5
6
7
8
9
10
11
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω ,
V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss
vs. Ju n cti o n Temp er atu r e
2
4
6
8
10
12
14
16
18
20
22
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
10
11
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10Ω
,
V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
600
700
800
900
1000
1100
1200
1300
1400
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
f i
- Nanoseconds
280
290
300
310
320
330
340
350
360
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10Ω
, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
IXYS REF: G_20N120A3(4L)10-01-08
Fig. 19. Inductive T u rn-on Switching Tim es
vs. Collector Current
0
20
40
60
80
100
120
140
160
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
r i
- Nanoseconds
15
16
17
18
19
20
21
22
23
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10Ω
, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-on Switching T imes
vs. Junction T emperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10Ω
, V
GE
= 15V
V
CE
= 960V
I
C
= 20A
I
C
= 40A
Fig. 18. Inductive T urn-on Switching Times
vs. Gate R e si s tan ce
0
20
40
60
80
100
120
140
160
180
200
10 15 20 25 30 35 40 45 50
R
G
- Ohms
t
r i
- Nanoseconds
5
10
15
20
25
30
35
40
45
50
55
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 20A
I
C
= 40A
