Features
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40 Watts peak pulse power (tp = 8/20μs)
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DFN1006 (0402)) package
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Bidirectional configurations
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Low clamping voltage
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Low leakage current
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Low capacitance (Cj=2.7pF typ.)
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RoHS compliant
Applications
Parameter Symbol Value
Unit
Peak Pulse Power (TP=8/20μS) PPP 40W
ESD Contact/Air Discharge (IEC-61000-4-2) VESD 10/15 kV
Peak Pulse Current ( tP = 8/20μS ) IPP 3.5 A
Junction Temperature TJ -55 to +125 °C
Storage Temperature TSTG -55 to +150 °C
DFN1006 (0402)
Schematic Diagram
GSESLC5VD1006S-2B
Low Capacitance ESD Protection Diode
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Electrical Characteristics (TA=25°C unless otherwise specified)
Protection one data/power line to:
IEC 61000-4-2 ±10kV contact ±15kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 3.5A (8/20μs)
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Audio Line, Speaker, Headset, Microphone Protection
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Human Interface Devices (Keyboard, Touchpad, Buttons)
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USB2.0 Protection
VT
Parameterer mbol Condition Min Ty p Ma x Unit
Reverse stand-off Voltage VRWM V 5.0
Reverse Breakdown Voltage VBR T=1mAI6.5 V
Reverse Leakage Current IR R=5V.0V 5 100 nA
IPP=3.5A 11.5 V
Clamping Voltage (IEC 61000-4-5) VC
Trigger Voltage (IEC 61000-4-2) ESD=V8kV 80 V
Clamping Voltage (IEC 61000-4-2) VCESD=V8kV 12 V
Junction Capacitance CJ R=0VV, f=1MHz 2.7
3.5
pF
5.5
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