max.
max.
dia.
2 plcs.
dia.
dia.
2 plcs.
VGS Gate – Source Voltage
IDContinuous Drain Current (VGS = 0 , Tcase = 25°C)
(VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
PDPower Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS Single Pulse Avalanche Energy 3
IAR Avalanche Current 1
EAR Repetitive Avalanche Energy 1
dv/dt Peak Diode Recovery 4
TJ, Tstg Operating and Storage Temperature Range
±20V
14A
9.0A
56A
150W
1.2W/°C
11.3mJ
14A
15mJ
4.0V/ns
-55 to +150°C
MECHANICAL DATA
Dimensions in mm (inches) N-CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
• REPETITIVE AVALANCHE RATINGS
• DYNAMIC DV/DT RATING
• HERMETICALL SEALED
• SIMPLE DRIVE REQUIREMENTS
• EASE OF PARALLELING
TO–3 (TO-204AA) Metal Package
Pin 1 – Source Pin 2 – Gate Case – Drain
VDSS 400V
ID(cont) 14A
RDS(on) 0.300ΩΩ
Document Number 6252
Issue 1
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E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Notes
1) Pulse Width ≤300μs, Duty Cycle ≤2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
3) VDD = 50V ,Peak IL= 14A , Starting TJ= 25°C
4) ISD ≤14A , di/dt ≤145A/μs , VDD ≤400V, TJ≤150°C , Suggested RG= 2.35Ω