KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Document Number: 88531
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
e4
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 50 V to 1000 V
IFSM 60 A
IR5 µA
VF1.0 V
TJ max. 150 °C
Case Style KBPM
+~~−
+
~
~
−
Note:
(1) JEDEC registered values
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Maximum repetitive peak reverse voltage (1) VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage (1) VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage (1) VDC 50 100 200 400 600 800 1000 V
Maximum average forward output rectified
current at TA = 40 °C IF(AV) 1.5 A
Peak forward surge current
single half sine-wave (1)
TA = 25 °C
TJ = 150 °C IFSM 60
40 A
Rating for fusing (t < 8.3 ms) I2t 10 A2s
Operating junction and storage temperature range (1) TJ, TSTG - 55 to + 150 °C
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88531
Revision: 15-Apr-08
2
Note:
(1) JEDEC registered values
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Maximum instantaneous forward
voltage drop per diode (1)
1.0 A
1.57 A VF 1.0
1.3 V
Maximum DC reverse current
at rated DC blocking voltage
per diode (1)
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction capacitance
per diode 4.0 V, 1 MHz CJ15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M UNIT
3N246 3N247 3N248 3N249 3N250 3N251 3N252
Typical thermal resistance (1) RθJA
RθJL
40
13 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
KBP06M-E4/45 1.895 45 30 Tube
KBP06M-E4/51 1.895 51 600 Anti-static PVC tray
3N250-E4/45 1.895 45 30 Tube
3N250-E4/51 1.895 51 600 Anti-static PVC tray
Figure 1. Derating Curve Output Rectified Current
0
20 40 60 80 100 120 140 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Capacitive Load
(per leg)
Bridge Output Full Wave Rectified
Current Average (A)
Ambient Temperature (°C)
P. C . B . M o unted on
0.47 x 0.47" (12 x 12 mm)
Copper Pads
60 Hz Resistive or
Inductive Load
=
5.0
10
20
I
pk
I
AV
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
101 100
10
20
30
40
50
60
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Single Half Sine-Wave
TJ = 150 °C
TA = 25 °C
1.0 Cycle
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Document Number: 88531
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0
0.01
0.1
1
10
60 80 10020 40
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
10.1 10 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028(0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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