Advance Technical Information IXFK55N50F IXFX55N50F HiPerRFTM Power MOSFETs VDSS ID25 = = 500V 55A 85m 250ns RDS(on) trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 500 500 V V VGSS VGSM Continuous Transient 20 30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 55 220 A A IAR EAS TC = 25C TC = 25C 55 3 A J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 10 V/ns PD TC = 25C 560 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z RF capable Mosfets Rugged polysilicon gate cell structure z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier z Applications z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS= 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 z V 5.5 V 200 nA 100 A 3 mA TJ = 125C 85 m z z z DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages z z z PLUS 247TM package for clip or spring mounting Space savings High power density DS98855A(9/02) (c) 2002 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ IXFK55N50F IXFX55N50F Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 VDS = 10V, ID = 0.5 * ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 33 S 6700 pF 1250 pF 330 pF 24 ns 20 ns Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) Qg(on) Qgs TO-264 (IXFK) Outline 45 ns 9.6 ns 195 nC 50 nC 95 nC VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.21 RthJC RthCS C/W C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 55 A Repetitive, Pulse Width Limited by TJM 220 A IF = 25A, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, -di/dt = 100A/s VR = 100V, VGS = 0V 1 C 10 A Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Note: 1. Pulse test, t 300 s, duty cycle d 2 % 2. See IXFN55N50F Datasheet for Characteristic Curves IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK 55N50F IXFX 55N50F Fig. 2. Output Characteristics at 125oC Fig. 1. Output Characteristics at 25oC 100 140 TJ = 25OC 100 V GS = 10V 9V 8V TJ = 125OC V GS = 10V 9V 8V 80 ID - Amperes ID - Amperes 120 80 7V 60 7V 60 40 6V 40 20 6V 20 5V 5V 0 0 2 4 6 8 0 10 0 12 6 12 V DS - Volts V DS - Volts Fig. 4. RDS(ON) vs. TJ Fig. 3. RDS(ON) vs. Drain Current 4.0 3 V GS = 10V V GS = 10V RDS(ON) - Normalized RDS(ON) - Normalized 3.5 TJ = 150OC 3.0 2.5 2.0 1.5 TJ = 25OC 1.0 0.5 0 10 20 30 40 2 ID = 55A ID = 27.5A 1 0 50 -25 0 ID - Amperes 60 55 50 45 40 35 30 25 20 15 10 5 0 -50 25 50 75 100 125 150 T J - Degrees C Fig. 5. Drain Current vs. Case Temperature Fig. 6. Admittance Curves 20 15 ID - Amperes ID - Amperes 18 10 TJ = 125o C TJ = 25o C 5 TJ = -40o C -25 0 25 50 75 100 125 150 T C - Degrees C 0 3.5 4.0 4.5 5.0 V GS - Volts (c) 2002 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ 5.5 6.0 6.5 IXFK55N50F IXFX55N50F Fig. 7. Gate Charge Characteristic Curve Fig. 8. Capacitance Curves 15 10000 Ciss 5000 Capacitance - pF VGS - Volts V DS = 250V ID = 27.5A 10 5 f = 1MHz 2500 Coss 1000 Crss 500 0 250 0 50 100 150 200 250 300 0 Gate Charge - nC 5 10 15 20 25 30 V DS - Volts Fig. 9. Source Current vs. Source to Drain Voltage 25 ID - Amperes 20 15 O O T J = 25 C T J = 125 C 10 5 0 0.2 0.4 0.6 0.8 1.0 V SD - Volts Fig. 10. Thermal Impedance ZthJC - (K/W) 1 0.1 Single Pulse 0.01 0.001 10 -4 10 -3 10 -2 10 -1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 10 0 10 1