SFH 3600
SFH 3605
Phototransistor im MIDLED-Gehäuse
Phototransistor in MIDLED package
Lead (Pb) Free Product - RoHS Compliant
SFH 3605
2007-04-03 1
SFH 3600
Wesentliche Merkmale
• Enger Empfangswinkel (±20°)
• Geringe Bauhöhe (1,6 mm)
• Als Toplooker und Sidelooker einsetzbar
SFH 3600: Gurtung als Toplooker
SFH 3605: Gurtung als Sidelooker
• Emitter im gleichen Gehäuse (SFH 46xx)
verfügbar
Anwendungen
• Lichtschranken, Lichtvorhänge
• Sensorik (Consumer, Industrieelektronik)
• Automobilanwendungen
• Näherungssensor
Typ
Type Bestellnummer
Ordering Code Fotostrom , (Ee=0.1 mW/cm2,λ=950 nm VCE = 5 V)
Photocurrent
Ipce (μA)
SFH 36001) Q65110A1573 100-500
SFH 3600 -2/31)
1) nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / only one group in one packing unit (variation
lower 2:1)
Q65110A2665 100-320
SFH 3600 -3/41) Q65110A2666 160-500
SFH 36051) Q65110A1574 100-500
SFH 3605 -2/31) Q65110A2663 100-320
SFH 3605 -3/41) Q65110A2664 160-500
Features
• Narrow angle (±20°)
• Low profile component (1,6 mm)
• Usable as top-looking and side-looking device
SFH 3600: Taping as Toplooker
SFH 3605: Taping as Sidelooker
• Emitter in same package (SFH 46xx) available
Applications
• Interrupters, Lightcurtains
• Sensors (Consumer, Industrial applications)
• Automotive applications
• proximity sensor
2007-04-03 2
SFH 3600, SFH 3605
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector curr ent IC15 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 75 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 7 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 130 mW
Wärmewiderstand Sperrschicht/Umgebung 1)
Thermal resistance junction
1) bei Montage auf FR4 Platine, Padgröße je 16 mm2 / when mounted on PC-board (FR4), padsize 16 mm 2 each
RthJA 340 K/W
Wärmewiderstand Sperrschicht/Lötstelle2)
Thermal resistance junction
2) bei Montage auf Metall-Block / when mounted on metal block
RthJS 180 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 990 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ500 … 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.04 mm2
Abmessungen des Chips
Dimensions of chip L × B × H
L × W × H0.35 × 0.35
× 0.185 mm × mm
× mm
SFH 3600, SFH 3605
2007-04-03 3
Halbwinkel
Half angle ϕ± 20 Grad
deg.
Kapazität, VCE = 5 V, f = 1 MHz, E = 0
Capacitance CCE 1.3 pF
Dunkelstrom
Dark current
VCE = 20 V, E = 0
ICEO 1 (≤ 50) nA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5 V
IPCE
100 .. 200
160 ... 320
250 ... 500
μA
Anstiegszeit/Abfallzeit,
λ = 950 nm
Rise and fall time
IC = 100 µA, VCC = 5 V, RL = 10 kΩ
tr, tf30 45 70 μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.1 mW/cm2, λ = 950 nm
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe / IPCEmin is the min. photocurrent of the specified group.
VCEsat 150 150 150 mV
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 3600, SFH 3605
2007-04-03 4
Directional Characteristics
Srel = f (ϕ)
Rel. Spectral Sensitivity,
Srel = f (λ), axial direction
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
OHF02432
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
100˚
90˚
80˚
70˚
60˚
50˚
0˚10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0
ϕ
400
0
20
40
S
rel
80
60
%
100
λ
OHF02405
500 600 700 800 900 nm 1100
10
30
50
70
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
Dark Current
ICEO = f (VCE), E = 0
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz
V
OHF02420
R
R
I
-2
10 0
10
-1
10
0
10
1
V
nA
5 10 15 20 25 30
OHF00592
0V
CE
C
pF
-2
10
-1
10 10
0
10
1
10
2
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
Dark Current
ICEO = f (TA), VCE = 20 V, E = 0
T
OHF00380
A
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
0
nA
20 40 60 80 100˚C
SFH 3600, SFH 3605
2007-04-03 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
1) Verarbeitungshinweis:
Das Gehäuse ist mit Silikon vergossen. Mech anischer Streß auf der Bauteiloberfläc he sollte so gering wie
möglich gehalten werden.
1) Handling indication:
The package is casted with silicone. Mec hanical stress at the surface of the unit should be as low as
possible.
Gehäuse
package MID mit klarem Silikonv erg uss
MID casted with clear Silicone
Anschlussbelegung
Pin configuration Pad 1 = Kollektor / collector
Pad 2 = Emitter / emitter
OHF02956
(1.2)
2.35
2.15
Isolating area
metallisation
Pad 2
Pad 1
metallisation (0.8)
1.7
1.5
0.75
0.55
3.3
2.9
metallisation
Backside
Silicone area
1)
Device casted with silicone.
1)
Avoid mechanical stress on silicone surface.
0.75
0.55
0.420.42
0.53
0.83
0.83
0.53
2007-04-03 6
SFH 3600, SFH 3605
Empfohlenes Lötpaddesign
Recommended Solder Pad Design
Verarbeitet als Toplooker
Mounted as toplooker
Verarbe ite t als Sidelook er
Mounted as sidelooker
OHF02422
4.0
2.4
1.35
Padgeometrie für
heat dissipation
Lötstopplack
Solder resist
verbesserte Wärmeableitung
Paddesign for improved
Cu-Fläche > 16 mm
Cu-area 2
SFH 3600
4.5
1.7
1.25
verbesserte Wärmeableitung
OHF02421
Solder resist
Cu-Fläche > 16 mm
Paddesign for improved
Lötstopplack
heat dissipation
Padgeometrie für
Cu-area 2
SFH 3605
SFH 3600, SFH 3605
2007-04-03 7
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
min. condition for IR Reflow Soldering:
solder point temperature ≥ 235 °C for at least 10 sec.
