FQPF8N60CF - Fairchild

FQPF8N60CF Rev. A

FQPF8N60CF 600V N-Channel MOSFET

February 2006

FRFET

FQPF8N60CF

600V N-Channel MOSFET

Features

• 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 12 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

Absolute Maximum Ratings

Thermal Characteristics

TO-220F

FQPF Series

GSD

Symbol Parameter FQPF8N60CFT Units

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C) 6.26* A

- Continuous (TC = 100°C) 3.96* A

IDM Drain Current - Pulsed (Note 1) 25* A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ

IAR Avalanche Current (Note 1) 6.26 A

EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C) 48 W

- Derate above 25°C 0.38 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter FQPF8N60CF Units

RθJC Thermal Resistance, Junction-to-Case 2.6 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

* Drain current limited by maximum junction temperature

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FQPF8N60CF Rev. A

FQPF8N60CF 600V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 7.3mH, IAS = 6.26A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 6.26A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Device Marking Device Package Reel Size Tape Width Quantity

FQPF8N60CFT FQPF8N60CFT TO-220F -- -- 50

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V

∆BVDSS/

∆TJ

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA

VDS = 480 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.13 A -- 1.25 1.5 Ω

gFS Forward Transconductance VDS = 40 V, ID =3.13 A (Note 4) -- 8.7 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 965 1255 pF

Coss Output Capacitance -- 105 135 pF

Crss Reverse Transfer Capacitance -- 12 16 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300 V, ID = 6.26A,

RG = 25 Ω

(Note 4, 5)

-- 16.5 45 ns

trTurn-On Rise Time -- 60.5 130 ns

td(off) Turn-Off Delay Time -- 81 170 ns

tfTurn-Off Fall Time -- 64.5 140 ns

QgTotal Gate Charge VDS = 480 V, ID = 6.26A,

VGS = 10 V

(Note 4, 5)

-- 28 36 nC

Qgs Gate-Source Charge -- 4.5 -- nC

Qgd Gate-Drain Charge -- 12 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 6.26 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.26 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 6.26 A,

dIF / dt = 100 A/µs (Note 4)

-- 82 -- ns

Qrr Reverse Recovery Charge -- 242 -- nC

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FQPF8N60CF Rev. A

FQPF8N60CF 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

10-1

100

101

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

Notes :※

1. 250µ s Pulse Test

2. TC

= 25℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

150oC

25oC

-55oC

Not es :※

1. VDS = 40V

2. 250µ s Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

150℃ Not es :※

1. VGS = 0V

2. 250µ s Pulse Test

25℃

IDR, Reverse Drain Current [A]

SD, Source-Drain voltage [V]

0 5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VGS = 20V

VGS = 10V

Note : T※J = 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

, Drain Current [A]

0 5 10 15 20 25 30

VDS = 300V

VDS = 120V

VDS = 480V

* Note : ID = 6.26A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

200

400

600

800

1000

1200

1400

1600

1800

2000 C

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Notes ;※

1. VGS = 0 V

2. f = 1 MHz

rss

oss

iss

Capacitance [pF]

DS, Drain-Source Voltage [V]

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FQPF8N60CF Rev. A

FQPF8N60CF 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. VGS = 0 V

2. ID

= 250 킕

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. VGS = 10 V

2. ID = 3.13 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

100101102103

10-2

10-1

100

101

102

100ms

10ms

1ms

100 µs

10 µs

Operation in This Area

is Limited by R DS(on)

* Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-SourceVoltage[V]

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature [oC]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

* Notes :

1. Z?JC

(t) = 2.6 ? /W Max.

2. Duty Factor, D=t1/t2

3. TJM - TC = PDM * Z?JC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z?JC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

PDM

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FQPF8N60CF Rev. A

FQPF8N60CF 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FQPF8N60CF Rev. A

FQPF8N60CF 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

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FQPF8N60CF Rev. A

FQPF8N60CF 600V N-Channel MOSFET

Mechanical Dimensions

(7.00) (0.70)

MAX1.47

(30°)

3.30 ±0.10

15.80 ±0.20

15.87 ±0.20

6.68 ±0.20

9.75 ±0.30

4.70 ±0.20

10.16 ±0.20

(1.00x45°)

2.54 ±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.20

0.35 ±0.10

ø3.18 ±0.10

2.54TYP

[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

0.50 +0.10

–0.05

TO-220F

Dimensions in Millimeters

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Rev. I19

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHO UT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENS E UNDER ITS PATENT RIGHTS , NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,

SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or s yst ems are devices or syst em s

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

FAST®

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

PowerSaver™

PowerTrench®

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

μSerDes™

ScalarPump™

SILENT SW I TCHER®

SMART ST ART ™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UniFET™

UltraFET®

VCX™

Wire™

FACT Quie t Series™

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The Power Franchise ®

Programmable Active Droop™

Data she e t Ide ntification Product S tatus Definit ion

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet cont ains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserv es the right to make changes at

any time without notice in or der to improve design.

Obsolete Not In Production This datasheet cont ains specifications on a product

that has been discontinued by Fairchild semiconductor .

The datasheet is printed for reference information only.

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