Rugged Power MOSFETs File Number 2285 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V Toston = 0.6 Q and 0.8 Q Features: @ Single pulse avalanche energy rated m SOA is power-dissipation limited = Nanosecond switching speeds e Linear transfer characteristics a High input impedance The IRFO9120 and IRFD9123 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera- tion. These are p-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated cir- cuits. The IRFD-types are supplied in the 4-Pin dual-in-line plastic IRFD9120 IRFD9123 TERMINAL DIAGRAM D 92CS$-43262 P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION il TOP VIEW package. 4-PIN DIP ABSOLUTE-MAXIMUM RATINGS CHARACTERISTIC IRFD9120 IRFD9123 UNITS Drain-Source Voltage . Vos -100 -60 Vv Drain-Gate Voltage (Ras = 20 kQ) @ Vocr -100 -60 Vv Continuous Drain Current lo @ Te = 25C -1 -0.8 A Pulsed Drain Current @ lom -8 64 A Gate-Source Voltage Ves +20 Vv Maximum Power Dissipation Po @ Tc = 25C 1.0 (See Fig. 13) Ww Linear Derating Factor 0.008 (See Fig. 13) wre Single-Pulse Avalanche Energy Rating @ Eas 370 mJ Operating Junction and Ts Storage Temperature Range Tag 55 to +150 C Lead Temperature 300 (0.063 in. [1.6 mm] from case for 10 s) C 6-401 Rugged Power MOSFETs IRFD9120 IRFD9123 ELECTRICAL CHARACTERISTICS At Case Temperature (T<.) = 25C Unless Otherwise Specified CHARACTERISTIC TYPE MIN. | TYP. | MAX. [UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVpss |IRFD9120{ -100 = _ Vv Ves = OV IRFO9123| -60 = = Vv Ip = -250 vA Gate Threshold Voltage Vesan ALL -2.0 -- -4.0 Vv Vos = Vos, lo = -250 vA Gate-Source Leakage Forward loss ALL -- -500 nA Ves = -20V Gate-Source Leakage Reverse Ioss ALL = = 500 nA Vas = 20 V Zero-Gate Voltage Drain Current loss ALL = = -250 | uA Vos = Max. Rating, Ves = 0 V = -1000 | yA Vos = Max. Rating x 0.8, Vas = 0 V, Tc = 125C On-State Drai t @ ' 9121 -1 _ _ A n-State Drain Curren Dion) nee aa = = 4 Vos > lowm X taste max, Vos = -10V Static Drain-Source On-State fostion =| IRFD9120, 0.5 0.6 m = = Resistance IAFD9123| | 06 [08 [oa] s* 10. 'o= 08a Forward Transconductance @ Qs ALL 0.8 1.2 = S(O) | Vos = 50 V, Ip =-0.8A Input Capacitance Ciss ALL = 300 _ pF _ _. _ Output Capacitance Cos ALL ee ee sl re Wve 25.V, f= 1.0 MHz Reverse Transfer Capacitance Crs ALL _ 0 pr 9- Turn-On Delay Time tatonr ALL - 25 50 ns Voo = 0.5 Ip = -0.8 A, Zo = 502 Rise Time t ALL _ 5) 100 ns See Fig. 16 Turn-Off Detay Time tarot ALL _ 50 100 ns (MOSFET switching times are essentially Fall Time tr ALL _ 50 100 nis independent of operating temperature.) Total Gate Charge Qs ALL _ 18 20 nc | Ves =-15 V, lo = -4 A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 17 for test circuit. (Gate charge is Gate-Source Charge Qgs ALL S 13.5 nc essentially independent of operating Gate-Drain (Miller) Charge Qoa ALL _ 7 10.5 nc temperature.) Internal Drain Inductance Lo ALL 40 _ nH Measured from the Modified MOSFET drain lead, 2.0mm symbol showing the bo (0.08 in.) from header internal device to center die. Lo Internal Source Inductance Ls ALL _ 6.0 _ nH Measured from the source lead, 2.0 mm 6O t (0.08 in.) from s header and source bonding pad. s THERMAL RESISTANCE [Junction-to-Ambient Resa ALL | - [120 [C/w | Typical socket mount ] SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS 5 Continuous Source Current Is IRFO9120] =. -1 A__]| Modified MOSFET symbol . | (Body Diode) IRFO9123 | =: -0.8 A__| showing the integral ) Pulse Source Current Isma IRFO9120} = -8 A reverse P-N junction rectifier. s (Body Diode) IRFD9123 _ = ~6.4 A 4 Diode Forward Voltage @ Vsp IRFD9120 =_ = -1.5 Vv Te = 25C, Ig = -1 A, Ves = OV s IRFD9123 =_ = ~1.5 Vv Te = 25C, Is = -0.8 A, Ves =.0 V Reverse Recovery Time te ALL = 150 = ns Ty = 180C, Ip = -4 A, dle/dt = 100 A/us _] Reverse Recovered Charge Qar ALL = 0.9 = uc Ty = 180C, ip = -4 A, dl_/dt = 100 A/us _ . intrinsic turn-on time is negiigible. Forward Turn-on Time ton ALL Turn-on speed is substantially controlled by Ls + Lo. @ Ty = 25C to 150C. @ Pulse Test: Pulse width <= 300 us, @ Von = 25 V, Starting T, = 25C, L = 555 mH, Duty Cycle <= 2%. Re = 25 9, Peak I, = 1A (See Figs. 14 & 15). 6-402 Rugged Power MOSFETs IRFD9120 IRFD9123 Ty = -55C t t et Ye v v Vos >!ofony* Rasion) mex. Ty = 125C a = j ; 5 = = = 5 5 3 o z z i i s Ss 0 -10 -20 x) 40 -$0 2 a 4 5 4 1 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. $ 10 py IRFD9120 -5.0 4 ge 720 z = -10 8 g < -0s io 5 wi & _0.2}H OPERATION IN THIS < 2 IS LIMITEO BY -0.1 > z o 2 z z -0.05 s 2 ; 002 Ty = 150C MAX. ~ SINGLE PULSE a -0.01 - 0.005 ~0.5-10 -2 -5 -10 -20 -50 -100-200 -500 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 l 2 3 4 5 92GS-44202 Vog. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. -100 00, 6 3 e [ a 4 00 us PULSE TEST 3 ' = - 501 Vos > !o(0n) * pSton) max. ee 2 2 - tn q z Ty=1 3 a Ty = 2500 = -10 @ Lo = 2, T og & Ty 125C 3 & annem 2 t ui a < >= S u< 3 = ~1.0 3 5 3 ' $ ~ - # 3 w z -041 0 -0.4 -06 -0.8 -1.0 -1.2 -14 -16 -1.8 a a 2 +3 4 5 4 NEGATIVE Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Ip, DRAIN CURRENT (AMPERES) 92G8-44168 Fig. 5 - Typical transconductance vs. drain current. Fig. 6 - Typical source-drain diode forward voltage. 6-403 Rugged Power MOSFETs IRFD9120 IRFD9123 ORAIN-TO-SOURCE BREAKDOWN VOLTAGE 8Vos5 C, CAPACITANCE (pF) Fi 6-404 ig. (NORMALIZED) Apion). ORAIN-TO-SOURCE ON RESISTANCE (OHMS) 1.20 105 4.10 1.00 O78 60 40 -20 0 2 66 80 100 120 140 Ty, JUNCTION TEMPERATURE (C) Fig. 7 - Breakdown voltage vs. temperature. Cigg * Oye # Gogg, C, Veg 0 oe 4. es tet vs 7 ed Caf, Com" Co* city = Cay * Cog ! Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) . 9 - Typical capacitance vs. drain-to-source voltage. Alpsion) MEASURED WITH CURRENT PULSE 2.0 us DURATION. INITIAL Ty = 25C, (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) o 2 4 6 4 Ip. QRAIN CURRENT (AMPERES) Fig. 11 - Typical on-resistance vs. drain current. Roston}. ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) a Q a 0 120 Ty, JUNCTION TEMPERATURE (C) Fig. 8 - Normalized on-resistance vs. temperature. Ip = -4A FOR TEST CIRCUIT SEE on Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) & S 4 8 2 16 20 Cy, TOTAL GATE CHARGE (nC) Fig. 10 - Typical gate charge vs. gate-to-source voltage. > S S - on o Ip, DRAIN CURRENT {AMPERES} 2 8 6 6 #0 1s 100 125 150 Tg. AMBIENT TEMPERATURE (C) Fig. 12 - Maximum drain current vs. case temperature. Rugged Power MOSFETs IRFD9120 IRFD9123 Lew Vag =-10 VARY tp TO OBTAIN REQUIRED PEAK ik, 92C$-43278 Pp, POWER DISSIPATION (WATTS) Fig. 14 - Unclamped inductive test circuit. 0 20 a 0 2 100 120 140 Ty. AMBIENT TEMPERATURE (C) Fig. 13 - Power vs. temperature derating curve. 8VYpss 92CS-43279 Fig. 15 - Unclamped inductive waveforms. ouT CURRENT -Vps *o REGULATOR (ISOLATED SUPPLY) avo I SAME TYPE BATTERY 1 0.2 uF SOK AS DUT Ag TTT bores Veg = -10 c put 4 tT 7 [ re 1. +" VARY tp TO OBTAIN t 'p O+Vos 'g REQUIRED PEAK I, CURRENT CURRENT . SAMPLING SAMPLING 92C5-43280 RESISTOR RESISTOR 92CS-43261 Fig. 16 - Switching time test circuit. Fig. 17 - Gate charge test circuit. 6-405