7MBR150VN120-50 IGBT Modules IGBT MODULE (V series) 1200V / 150A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature Storage temperature Tc Tstg Continuous 1ms Tc=80C Tc=80C 1ms 1 device Continuous 1ms 1 device Tc=80C Tc=80C 50Hz/60Hz, sine wave 10ms, Tj=150C half sine wave Inverter, Brake Converter Inverter, Brake Converter Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - Maximum ratings 1200 20 150 300 150 300 885 1200 20 100 200 520 1200 1600 150 780 3000 175 150 150 150 125 -40 to +125 V V A W V V A W V V A A A2 s C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 Units 7MBR150VN120-50 IGBT Modules Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions I CES I GES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = 20V VCE = 20V, I C = 150mA VCE (sat) (terminal) VGE = 15V I C = 150A Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Tj=25C Tj=125C Tj=150C Tj=25C VGE = 15V Tj=125C I C = 150A Tj=150C VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V I C = 150A VGE = +15 / -15V RG = 1.8 I F = 150A Forward on voltage Brake Units mA nA V V nF s V VF (chip) I F = 150A trr I F = 150A Zero gate voltage collector current I CES VGE = 0V VCE = 1200V - - 1.0 mA Gate-Emitter leakage current I GES VCE = 0V VGE = +20 / -20V - - 200 nA VCE (sat) (terminal) VGE = 15V I C = 100A 465 3305 2.15 2.45 2.50 1.75 2.05 2.10 0.39 0.09 0.53 0.06 2.00 1.40 5000 495 3375 2.60 2.20 1.20 0.60 1.00 0.30 1.00 2.45 1.0 520 3450 Reverse recovery time Collector-Emitter saturation voltage VCE (sat) (chip) Turn-on time Turn-off time Reverse current Thermistor Converter Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.45 2.90 2.80 2.85 1.85 2.30 2.20 2.25 12.5 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.50 2.95 2.80 2.75 1.90 2.35 2.20 2.15 0.1 ton tr toff tf IRRM VGE = 15V I C = 100A Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C VCE = 600V I C = 100A VGE = +15 / -15V RG = 1.6 VR = 1200V Forward on voltage VFM (chip) Reverse current IRRM Resistance R B value B VR = 1600V T = 25C T = 100C T = 25 / 50C Symbols Conditions I F = 150A terminal chip s V s mA V mA K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.17 0.31 0.29 0.24 0.05 - Units C/W 7MBR150VN120-50 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip 300 300 15V Collector current: IC [A] VGE=20V 12V 250 200 150 10V 100 50 12V 200 150 10V 100 50 8V 0 8V 0 0 1 2 3 4 5 0 Collector-Emitter voltage: VCE[V] 3 4 5 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8 Tj=25C Collector - Emitter voltage: VCE [V] 300 Tj=150C 250 Collector current: IC [A] 2 1 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 Tj=125C 150 100 50 0 6 4 Ic=300A Ic=150A Ic=75A 2 0 0 1 2 3 4 5 5 10 15 20 25 Collector current: IC [A] Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) [ Inverter ] Dynamic gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25C VGE=0V, f= 1MHz, Tj= 25oC Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Capacitance: Cies, Coes, Cres [nF] 15V 250 Collector current: IC [A] VGE=20V Cies 10.0 Cres 1.0 Coes 0.1 0.0 0 10 20 30 Collector - Emitter voltage: VCE [V] VGE VCE 0 200 400 600 800 1000 1200 1400 1600 Gate charge: Qg [nC] 3 7MBR150VN120-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.8, Tj= 150C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.8, Tj= 125C toff ton tr 100 tf 10 0 100 200 300 10000 1000 ton tf 10 400 0 10000 toff ton tr 100 tf 10 1.0 10.0 200 300 Collector current: IC [A] 100.0 Eoff(150C) Eoff(125C) Eon(150C) Eon(125C) Err(150C) Err(125C) 20 10 0 0 100 200 300 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.8 ,Tj <= 125C 20 Eon(150C) 16 Eon(125C) 12 Eoff(125C) 10 Collector current: IC [A] 400 18 Eoff(150C) Err(150C) 8 Err(125C) 6 4 300 200 RBSOA (Repetitive pulse) 100 2 0 0 0 1 10 400 Collector current: IC [A] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V 14 400 30 Gate resistance : Rg [] Switching loss : Eon, Eoff, Err [mJ/pulse ] 100 [ Inverter ] a Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.8 Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 125C 0.1 tr 100 Collector current: IC [A] 1000 toff 0 100 400 800 1200 Collector-Emitter voltage : VCE [V] Gate resistance : Rg [] 4 7MBR150VN120-50 IGBT Modules [ Inverter ] Forward current vs. forward on voltage (typ.) chip Tj=25C 150 100 Tj=150C Tj=125C 50 0 0 1 2 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 200 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=1.8 3 4 Irr(150C) Irr(125C) trr(150C) trr(125C) 100 10 5 0 100 Forward on voltage : VF [V] 200 300 400 Forward current : IF [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip Forward current : IF [A] 300 Tj=25C Tj=125 C 200 100 0 0 1 2 3 4 Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) 1.00 100 FWD[Inverter] IGBT[Brake] Resistance : R [k] Thermal resistanse : Rth(j-c) [ C/W ] Transient thermal resistance (max.) Conv. Diode IGBT[Inverter] 0.10 0.01 0.001 0.010 0.100 10 1 0.1 1.000 -60 Pulse width : Pw [sec] -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [C ] 5 7MBR150VN120-50 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip VGE=20V 200 15V VGE=20V 12V Collector current: IC [A] 200 Collector current: IC [A] IGBT Modules 150 10V 100 50 15V 150 12V 10V 100 50 8V 8V 0 0 0 1 2 3 4 5 0 Collector-Emitter voltage: VCE[V] 5 Tj= 25oC / chip 8 Tj=25C Collector - Emitter voltage: VCE [V] Collector current: IC [A] 4 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=150C 150 Tj=125C 100 50 0 6 4 Ic=200A Ic=100A Ic=50A 2 0 0 1 2 3 4 5 5 10 15 20 Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) [ Brake ] Dynamic gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25C VGE=0V, f= 1MHz, Tj= 25oC Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Capacitance: Cies, Coes, Cres [nF] 3 Collector-Emitter voltage: VCE[V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 2 1 Cies 10.0 1.0 Cres Coes 0.1 0 10 20 30 VGE VCE 0 Collector - Emitter voltage: VCE [V] 200 400 600 Gate charge: Qg [nC] 6 25 800 1000 7MBR150VN120-50 IGBT Modules Outline Drawings, mm ( shows theoretical dimension. ) shows reference dimension. Section A-A Equivalent Circuit Schematic [ Converter ] [ Brake] [ Inverter ] 7 [ Thermistor ] 7MBR150VN120-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. Copyright (c)1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. 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