RB715F SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE - 40 Volts FORWARD CURRENT - 0.03 Ampere FEATURES SOT-323 * Extremely Fast Switching Speed * Low Forward Voltage * Very Small Conduction Losses SOT-323 Dim. A B C D G H J K L N S MECHANICAL DATA * Case: SOT-323 Plastic * Case Material: "Green" molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) * Moisture Sensitivity: Level 1 per J-STD-020D * Lead Free in RoHS 2002/95/EC Compliant Min. Max. 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 Ref. 0.650 Bsc 0.700 Ref. 2.00 2.40 Dimensions in millimeter Maximum Ratings & Thermal Characteristics @ TA = 25 unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Average Rectifier Forward Current Peak Forward Surge Current@t=8.3ms Power Dissipation Operating Temperature Range Storage Temperature Range Symbol RB715F Units VRM VR IF(AV) IFSM PD TJ TSTG 40 40 30 200 200 125 -40~+125 V V mA mA mW RB715F Unit Electrical Characteristics @ TA = 25 unless otherwise specified Characteristic Test Condition Symbol Reverse Breakdown Voltage IR = 10uA VBR 40 V Maximum Forward Voltage Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Diode Capacitance IF = 1mA VF 370 mV VR = 10V IR 1 uA VR =1.0V,f=1MHz CD 2 pF REV. 2, Jan-2013, KSHR47 RATING AND CHARACTERISTIC CURVES RB715F FIG.1- TYPICAL FORWORD CHARACTERISTICS FIG.2- TYPICAL REVE RSE CHARACTERISTICS 10 TA=125C TA=75C 1 TA=25C 0.1 TA=-25C 10 TA=75C CURRENT, (uA) IR , INSTANTANEO US REVERSE TA=125C CURRENT, (mA) IF, INSTANTANEOUS FORWARD 100 TA=25C 0.1 TA=-25C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.001 0.6 0 V F, INSTANTANEOUS FORWARD VOLTAGE, (V) 5 O 10 15 20 25 30 35 VR, I NSTANTANEOUS REVERSE VOLTAGE, (V) FIG.3- TYPICAL JUNCTION CAPACITANCE FIG.4- FORWARD CURRENT DERATING CURVE 10 CT , CAPACITANCE, (pF) IO , AVERAGE FORWARD CURRENT , (mA) 40 Tj=25C, f=1MHz 35 30 25 20 15 10 5 0 1 0 4 8 VR , REVERSE VOLTAGE, (V) 12 0 25 50 75 100 125 TA, AMBIENT TEMAERATURE, ( C) Device Marking : Device P/N Marking RB715F 3D Equivalent Circuit Diagram 150 175 Legal Disclaimer Notice RB715F Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC. LITE-ON SEMICONDUCTOR Issued Date: Jan'1, 2013 New Marking Rule Notification Range: In order to have well management in process control, the new marking rule is applied to small signal device including Switching Diode, Transistor and Schottky Diode. Package: SOT-23 / SOT-323 / SOT-523 Device Code Pb free " Odd Year 1 2 3 4 5 6 7 8 9 T V C " or " Even Year E F H J K L N P U X Y Z ": Traceability Code Month Code