RB715F
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
REVERSE VOLTAGE – 40 Volts
FORWARD CURRENT – 0.03 Ampere
FEATURES
•
Extremely Fast Switching Speed
•
Low Forward Voltage
•
Very Small Conduction Losses
MECHANICAL DATA
•
Case: SOT-323 Plastic
•
Case Material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Lead Free in RoHS 2002/95/EC Compliant
SOT-323
SOT-323
Dim. Min. Max.
A 1.80 2.20
B 1.15 1.35
C 0.80 1.00
D 0.30
0.40
G 1.20 1.40
H 0.00 0.10
J 0.10 0.25
K 0.425 Ref.
L 0.650 Bsc
N 0.700 Ref.
S 2.00 2.40
Dimensions in millimeter
Maximum Ratings & Thermal Characteristics
@ T
A
= 25℃ unless otherwise specified
Characteristic Symbol
RB715F
Units
Non-Repetitive Peak Reverse Voltage V
RM
40 V
DC Blocking Voltage V
R
40 V
Average Rectifier Forward Current I
F(AV)
30 mA
Peak Forward Surge Current@t=8.3ms I
FSM
200 mA
Power Dissipation P
D
200 mW
Operating Temperature Range T
J
125 ℃
Storage Temperature Range T
STG
-40~+125 ℃
Electrical Characteristics
@
T
A
= 25℃ unless otherwise specified
Characteristic Test Condition Symbol
RB715F
Unit
Reverse Breakdown Voltage I
R
= 10uA V
BR
40 V
Maximum Forward Voltage I
F
= 1mA V
F
370 mV
Maximum D
C Reverse Current
at Rated DC Blocking Voltage
V
R
= 10V I
R
1 uA
Typical Diode Capacitance V
R
=1.0V,f=1MHz
C
D
2 pF
REV. 2, Jan-2013, KSHR47
RATING AND CHARACTERISTIC CURVES
RB715F
FIG.1- TYPICAL FORWORD CHARACTERISTICS
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE, (V)
I
F
, INSTANTANEOUS FORWARD
CURRENT, (mA)
FIG.2- TYPICAL REVERSE CHARACTERISTICS
0.001
0.1
10
0 5 10 15 20 25 30 35
VR, I NSTANTANEOUS REVERSE VOLTAGE, (V)
IR, INSTANTANEOUS REVERSE
CURRENT, (uA)
FIG.3- TYPICAL JUNCTION CAPACITANCE
1
10
0 4 8 12
V
R
, REVERSE VOLTAGE, (V)
C
T
, CAPACITANCE, (pF)
FIG.4- FORWARD CURRENT DERATING CURVE
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150 175
T
A
, AMBIENT TEMAERATURE, ( C)
I
O
, AVERAGE FORWARD CURRENT , (mA)
Device Marking :
Device P/N Marking Equivalent Circuit Diagram
RB715F 3D
O
Tj=25°C, f=1MHz
TA=75°C
TA=125°C
TA=25°C
TA=-25°C
TA=75°C
TA=125°C
TA=25°C
TA=-25°C
Legal Disclaimer Notice
RB715F
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and specifications
at any time without notice. Customers should obtain and confirm the latest product
information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does LSC assume any liability for application assistance or
customer product design. LSC does not warrant or accept any liability with products which
are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
LSC.
LSC products are not authorized for use as critical components in life support devices or
systems without express written approval of LSC.
SEMICONDUCTOR
LITE-ON
Issued Date: Jan’1, 2013
New Marking Rule Notification
Range: In order to have well management in process control, the
new marking rule is applied to small signal device including
Switching Diode, Transistor and Schottky Diode.
Package: SOT-23 / SOT-323 / SOT-523
Odd Year
Even Year
1
E
2
F
3
H
4
J
5
K
6
L
7
N
8
P
9
U
T
X
V
Y
C
Z
Device Code
Month Code
Pb free
“ “ or “ ”: Traceability Code
