MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZ-34H IC ................................................................... 800A VCES ....................................................... 1700V Insulated Type 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 4 - M8 NUTS 570.25 C2 E1 C2 20 E1 G1 G2 E2 E2 C1 C1 E1 E2 C1 G1 C2 16 40 6 - M4 NUTS C1 140 30 CM 1240.25 C2 E1 CIRCUIT DIAGRAM G2 18 6 - 7 MOUNTING HOLES 44 53 E2 57 5 55.2 35 11.85 11.5 LABEL 31.5 28 5 38 14 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Oct. 2002 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Mounting torque -- Mass Conditions VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C, IGBT part Ratings 1700 20 800 1600 800 1600 5000 -40 ~ +150 -40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.0 (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W C C V N*m N*m N*m kg ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min -- Limits Typ -- Max 12 IC = 80mA, VCE = 10V 4.5 5.5 6.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.80 3.20 72 9.0 3.6 6.6 -- -- -- -- 2.60 -- 150 -- -- 0.020 0.5 3.64 -- -- -- -- -- 1.60 2.00 2.70 0.80 3.38 2.70 -- 0.025 0.043 -- A Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions (Note 4) VCE = 10V VGE = 0V VCC = 850V, IC = 800A, VGE = 15V VCC = 850V, IC = 800A VGE1 = VGE2 = 15V RG = 3.3 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) Unit mA V nF nF nF C s s s s V s C K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Oct. 2002 SECURITY CODE SPEC.NAME Application Note MITSUBISHI ELECTRIC CORPORATION Prepared by Checked by Approved by DATE S.Iura M.Yamamoto M.Yamamoto Apr.8.2002 R E V A S.Iura I.Umesaki M.Tabata Aug.2.2002 Data Sheet (CM800DZ-34H) 1. Output characteristics Page 2 2. Transfer characteristics Page 3 3. Collector-emitter saturation voltage characteristics Page 4 / 5 4. Free wheel diode forward characteristics Page 6 5. Capacitance characteristics Page 7 6. Gate charge characteristics Page 8 7. Half-bridge Switching time characteristics Page 9 8. Half-bridge Switching energy characteristics Page 10 9. Reverse recovery characteristics Page 11 10. Transient thermal impedance characteristics Page 12 11. Turn-off switching safe operating area Page 13 12. Short circuit safe operating area Page 14 13. Reverse recovery safe operating area Page 15 HVIGBT HVM-1005-A (P2-OU) A PAGE 1 / 15 12000 Tj=25C 10000 COLLECTOR CURRENT [A] 8000 VGE=20V 6000 4000 VGE=15V VGE=14V VGE=12V 2000 VGE=10V VGE= 8V 0 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE [V] Output characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 2 / 15 12000 VCE=10V 10000 COLLECTOR CURRENT [A] 8000 Tj=25C 6000 4000 Tj=125C 2000 0 0 5 10 15 20 GATE-EMITTER VOLTAGE [V] Transfer characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 3 / 15 6 VGE=15V 5 COLLECTOR-EMITTER VOLTAGE [V] Tj=125C 4 Tj=25C 3 2 1 0 0 500 1000 1500 2000 COLLECTOR CURRENT [A] Collector-emitter saturation voltage characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 4 / 15 10 Tj=25C 9 COLLECTOR-EMITTER SATURATION VOLTAGE [V] 8 7 6 5 4 Ic = 1600A 3 Ic = 800A Ic = 400A 2 1 0 0 5 10 15 20 GATE-EMITTER VOLTAGE [V] Collector-emitter saturation voltage characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 5 / 15 5 EMITTER-COLLECTOR VOLTAGE [V] 4 Tj=25C 3 Tj=125C 2 1 0 0 500 1000 1500 2000 EMITTER CURRENT [A] Free wheel diode forward voltage characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 6 / 15 1000 VGE=15V, Tj=25C f=100kHz Cies: Coes: f=100kHz Cres: f=1MHz 100 CAPACITANCE [nF] Cies 10 Coes Cres 1 0.1 1 10 100 COLLECTOR-EMITTER VOLTAGE [V] Capacitance characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 7 / 15 20 VCC=850V IC=800A 18 16 GATE-EMITTER VOLTAGE [V] 14 12 10 8 6 4 2 0 0 2500 5000 7500 10000 GATE CHARGE [nC] Gate charge characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 8 / 15 10 VCC=850V, VGE=15V RG=3.3, Tj=125C, LS=150nH Inductive load td(off) 1 SWITCHING TIME [s] td(on) tr tf 0.1 0.01 10 100 1000 10000 COLLECTOR CURRENT [A] Half-bridge switching time characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 9 / 15 1.2 VCC=850V, VGE=15V RG=3.3, Tj=125C, LS=150nH Inductive load Integrated over range of 10% 1 SWITCHING ENERGY [J/P] 0.8 Eon 0.6 0.4 Eoff 0.2 Erec 0 0 400 800 1200 1600 COLLECTOR / EMITTER CURRENT [A] Half-bridge switching energy characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 10 / 15 100 10000 VCC=850V, Tj=125C LS=150nH, Inductive load 1000 REVERSE RECOVERY TIME [s] 10 Irr trr 1 100 0.1 10 100 1000 REVERSE RECOVERY CURRENT [A] IGBT drive conditions VGE=15V, RG=3.3 10 10000 EMITTER CURRENT [A] Reverse recovery characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 11 / 15 NORMALIZED TRANSIENT THERMAL IMPEDANCE Transient thermal impedance characteristics HVIGBT HVM-1005-A (P2-OU) PAGE 12 / 15 0.0 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0.010 TIME [second] 0.100 1.000 . Single pulse Tc = 25C IGBT part : Rth(j-c)=0.020 K/W FWDi part: Rth(j-c)=0.034 K/W 10.000 3000 VCC1150V, VGE=15V RG3.3, Tj=125C 2500 COLLECTOR CURRENT [A] 2000 1500 1000 500 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE [V] Turn-off switching safe operating area (SWSOA / RBSOA) HVIGBT HVM-1005-A (P2-OU) PAGE 13 / 15 6000 VCC1150V, VGE=15V RG3.3, Tj=125C tw10s 5000 COLLECTOR CURRENT [A] 4000 3000 2000 1000 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE [V] Short circuit safe operating area (SCSOA) HVIGBT HVM-1005-A (P2-OU) PAGE 14 / 15 2500 VCC1150V, Tj=125C di/dt1800A/s REVERSE RECOVERY CURRENT [A] 2000 1500 1000 500 0 0 500 1000 1500 2000 EMITTER-COLLECTOR VOLTAGE [V] Reverse recovery safe operating area (RRSOA / Di-SOA) HVIGBT HVM-1005-A (P2-OU) PAGE 15 / 15