2N7081–220M–ISO
Semelab plc Telephone (01455) 556565 Fax (01455) 552612.
E-mail: sales@semelab.co.uk Web site: http://www.semelab.co.uk Prelim. 6/98
VDS Drain – Source Voltage
VGS Gate – Source Voltage
IDContinuous Drain Current TC= 25°C
TC= 100°C
IDM Pulsed Drain Current 1
PDPower Dissipation TC= 25°C
TC= 100°C
TJ, Tstg Operating and Storage Temperature Range
TLLead Temperature (1/16” from case for 10 sec.)
100V
±20V
11A
7.7A
48A
45W
18W
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm(inches)
123
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.92 (0.430)
13.38 (0.527)
13.64 (0.537)
16.38 (0.645)
16.89 (0.665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
12.07 (0.500)
19.05 (0.750)
Dia.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
TO–220 Metal Package
N–CHANNEL
POWER MOSFET
FEATURES
• TO–220 ISOLATED HERMETIC PACKAGE
• LOW RDS(ON)
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
VDSS 100V
ID(cont) 11A
RDS(on) 0.15ΩΩ
2N7081–220M–ISO
Semelab plc Telephone (01455) 556565 Fax (01455) 552612.
E-mail: sales@semelab.co.uk Web site: http://www.semelab.co.uk Prelim. 6/98
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 250µA
VDS = VGS ID= 250µA
VDS = 0 VGS = ±20V
VDS = 80V
VGS = 0 TJ= 125°C
VDS = 10V VGS = 10V
VGS = 10V
ID= 7.7A TJ= 125°C
VDS = 15V IDS = 7.7A
VGS = 0
VDS = 25V
f = 1MHz
VDD = 50V ID= 11A
VGEN =10V
RL= 4.1Ω
RG= 7.5Ω
IF=11 VGS = 0
IF= IS
dIF/dt = 100A/µs
ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current
Static Drain – Source On–State
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
24
±100
25
250
11 0.12 0.15
0.22 0.27
45
600
190
35
7
45
30
10
12
48
2.5
100 300
0.7
2.8
80
1
V
V
nA
µA
A
Ω
S
pF
ns
A
V
ns
µC
K/W
BVDSS
VGS(th)
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
RθJC
RθJA
RθCS
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
PACKAGE CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
