IRLML2402TRHR - INTERNATIONAL RECTIFIER

IRLML2402

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This

package, dubbed the Micro3, is ideal for applications

where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

VDSS = 20V

RDS(on) = 0.25Ω

HEXFET® Power MOSFET

Description

12/14/11

lGeneration V Technology

lUltra Low On-Resistance

lN-Channel MOSFET

lSOT-23 Footprint

lLow Profile (<1.1mm)

lAvailable in Tape and Reel

lFast Switching

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 1.2

ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 0.95 A

IDM Pulsed Drain Current 7.4

PD

@TA = 25°C Power Dissipation 540 mW

Linear Derating Factor 4.3 mW/°C

VGS Gate-to-Source Voltage ± 12 V

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient  230

Thermal Resistance

°C/W

www.irf.com 1

Micro3™

D

S

G

3

1

2

PD - 91257E

IRLML2402

www.irf.com 2

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 20   V VGS = 0V, ID = 250µA

ΔV(BR)DSS/ΔT

JBreakdown Voltage Temp. Coefficient  0.024  V/°C Reference to 25°C, ID = 1mA

  0.25 VGS = 4.5V, ID = 0.93A 

  0.35 VGS = 2.7V, ID = 0.47A 

VGS(th) Gate Threshold Voltage 0.70   V VDS = VGS, ID = 250µA

gfs Forward Transconductance 1.3   S VDS = 10V, ID = 0.47A

  1.0 VDS = 16V, VGS = 0V

  25 VDS = 16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage   -100 VGS = -12V

Gate-to-Source Reverse Leakage   100 VGS = 12V

QgTotal Gate Charge  2.6 3.9 ID = 0.93A

Qgs Gate-to-Source Charge  0.41 0.62 nC VDS = 16V

Qgd Gate-to-Drain ("Miller") Charge  1.1 1.7 VGS = 4.5V, See Fig. 6 and 9 

td(on) Turn-On Delay Time  2.5  VDD = 10V

trRise Time  9.5  ID = 0.93A

td(off) Turn-Off Delay Time  9.7  RG = 6.2Ω

tfFall Time  4.8  RD = 11Ω, See Fig. 10 

Ciss Input Capacitance  110  VGS = 0V

Coss Output Capacitance  51  pF VDS = 15V

Crss Reverse Transfer Capacitance  25   = 1.0MHz, See Fig. 5

Ω

µA

nA

IGSS

IDSS Drain-to-Source Leakage Current

RDS(on) Static Drain-to-Source On-Resistance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage   1.2 V TJ = 25°C, IS = 0.93A, VGS = 0V 

trr Reverse Recovery Time  25 38 ns TJ = 25°C, IF = 0.93A

Qrr Reverse RecoveryCharge  16 24 nC di/dt = 100A/µs 

Source-Drain Ratings and Characteristics

A

  7.4

  0.54

S

D

G

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ 0.93A, di/dt ≤ 90A/µs, VDD ≤ V

(BR)DSS,

TJ ≤ 150°C

Notes:

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on FR-4 board, t ≤ 5sec.

ns

IRLML2402

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01

0.1

1

10

100

0.1 1 10

I , Drain-to-Source Current (A)

D

V , Drain-to-Source Voltage (V)

DS

20μs PULSE WIDTH

T = 25°C

A

VGS

TOP 7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

BOTTOM 1.5V

1.5V

J

0.01

0.1

1

10

100

0.1 1 10

I , Drain-to-Source Current (A)

D

V , Drain-to-Source Voltage (V)

DS

A

VGS

TOP 7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

BOTTOM 1.5V

1.5V

20μs PULSE WIDTH

T = 150°C

J

0.01

0.1

1

10

1.5 2.0 2.5 3.0 3.5 4.0

T = 25°C

T = 150°C

J

GS

V , Gate-to-Source Voltage (V)

D

I , Drain-to-Source Current (A)

A

V = 10V

20μs PULSE WIDTH

DS

0.0

0.5

1.0

1.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

J

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

A

V = 4.5V

GS

I = 0.93A

D

IRLML2402

www.irf.com 4

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

40

80

120

160

200

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

2

4

6

8

10

0.0 1.0 2.0 3.0 4.0

G

GS

A

Q , Total Gate Charge (nC)

FOR TEST CIRCUIT

SEE FIGURE 9

V , Gate-to-Source Voltage (V)

I = 0.93A

V = 16V

D

DS

0.01

0.1

1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

T = 25°C

T = 150°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

A

0.1

1

10

100

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

T = 25°C

T = 150°C

Single Pulse

100μs

1ms

10ms

A

J

IRLML2402

www.irf.com 5

VDS

90%

10%

VGS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

VDS

4.5V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

+

-

Fig 9a. Basic Gate Charge Waveform

D.U.T. V

DS

I

D

I

G

3mA

V

GS

.3μF

50KΩ

.2μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Q

G

Q

GS

Q

GD

V

G

Charge

4.5V

Fig 9b. Gate Charge Test Circuit

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRLML2402

www.irf.com 6

Fig 12. For N-Channel HEXFETS

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P. W .

Period

+

-

+

-

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



*

IRLML2402

www.irf.com 7

Micro3 / SOT-23 Package Marking

A YW LC

PART NUMBER

Y = YEAR

W = WEEK

LOT

CODE

HALOGEN FREE

INDICATOR

PART NUMBER CODE REFERENCE:

A = IRLML2402

B =IRLML2803

C = IRLML2402

D = IRLML5103

E = IRLML6402

F = IRLML6401

G = IRLML2502

H = IRLML5203

Note: A line above the work week

(as shown here) indicates Lead-free

Micro3 (SOT-23 / TO-236AB) Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

A2001 A27

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

W = (27-52) IF PRECEDED BY A LETTER

Y

82008

32003

12001

YEAR

2002 2

52005

2004 4

2007

2006

7

6

2010 0

2009 9

YEAR Y

C03

WOR K

WE E K

01

02

A

W

B

04 D

24

26

25

X

Z

Y

WOR K

WE E K W

K

H

G

F

E

D

C

B

2006

2003

2002

2005

2004

2008

2007

2010

2009 J

Y51

29

28

30

C

B

D

50 X

52 Z

0.972

1.900

Recommended Footprint

0.802

0.950 2.742

Micro3 (SOT-23) (Lead-Free) Package Outline

Dimensions are shown in millimeters (inches)

e

E1

E

D

A

B

0.15 [0.006]

e1

12

3

MCBA

5

6

5

3X L

c

b

A1 3X

A

A2

ABC

M

0.20 [0.008]

0.10 [0.004] C

C

L2

H4L1

7

0.89 1.12

SYMBOL MAXMIN

A1

b

0.01 0.10

c

0.30 0.50

D

0.08 0.20

E

2.80 3.04

E1

2.10 2.64

e

1.20 1.40

A

0.95 BSC

L 0.40 0.60

08

MILLIMETERS

A2 0.88 1.02

e1 1.90 BSC

REF0.54L1

BSC0.25L2



BSC



REF

%6&



INCHES

80



%6&













0.0004

MIN MAX



DIMENSIONS

NOTES:

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: MILLIMETER.

4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.

5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.

6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES

NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS

OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.

7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

IRLML2402

www.irf.com 8

Data and specifications subject to change without notice.

Micro3™ Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

TR

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

1.6 ( .062 )

1.5 ( .060 ) 1.85 ( .072 )

1.65 ( .065 )

3.55 ( .139 )

3.45 ( .136 )

1.1 ( .043 )

0.9 ( .036 )

4.1 ( .161 )

3.9 ( .154 ) 0.35 ( .013 )

0.25 ( .010 )

8.3 ( .326 )

7.9 ( .312 )

1.32 ( .051 )

1.12 ( .045 )

9.90 ( .390 )

8.40 ( .331 )

178.00

( 7.008 )

MAX.

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 12/2011