AAT4280
Slew Rate Controlled Load SwitchSmartSwitchTM
PRODUCT DATASHEET
10 4280.2010.04.1.5
www.analogictech.com
Applications Information
Input Capacitor
A 1μF or larger capacitor is typically recommended for CIN
in most applications. A CIN capacitor is not required for
basic operation. However, CIN is useful in preventing load
transients from affecting upstream circuits. CIN should be
located as close to the device VIN pin as practically possi-
ble. Ceramic, tantalum, or aluminum electrolytic capaci-
tors may be selected for CIN. There is no specific capacitor
ESR requirement for CIN. However, for higher current
operation, ceramic capacitors are recommended for CIN
due to their inherent capability over tantalum capacitors
to withstand input current surges from low impedance
sources, such as batteries in portable devices.
Output Capacitor
For proper slew operation, a 0.1μF capacitor or greater
between VOUT and GND is recommended. The output
capacitor has no specific capacitor type or ESR require-
ment. If desired, COUT may be increased without limit to
accommodate any load transient condition without
adversely affecting the device turn-on slew rate time.
Enable Function
The AAT4280 features an enable / disable function. This
pin (ON/OFF) is compatible with both TTL or CMOS logic.
Reverse Output-to-Input Voltage
Conditions and Protection
Under normal operating conditions, a parasitic diode
exists between the output and input of the load switch.
The input voltage should always remain greater than the
output load voltage, maintaining a reverse bias on the
internal parasitic diode. Conditions where VOUT might
exceed VIN should be avoided since this would forward
bias the internal parasitic diode and allow excessive cur-
rent flow into the VOUT pin and possibly damage the load
switch.
In applications where there is a possibility of VOUT
exceeding VIN for brief periods of time during normal
operation, the use of a larger value CIN capacitor is
highly recommended. A larger value of CIN with respect
to COUT will effect a slower CIN decay rate during shut-
down, thus preventing VOUT from exceeding VIN. In appli-
cations where there is a greater danger of VOUT exceeding
VIN for extended periods of time, it is recommended to
place a Schottky diode from VIN to VOUT (connecting the
cathode to VIN and anode to VOUT). The Schottky diode
forward voltage should be less than 0.45V.
Thermal Considerations and
High Output Current Applications
The AAT4280 is designed to deliver a continuous output
load current. The limiting characteristic for maximum
safe operating output load current is package power dis-
sipation. In order to obtain high operating currents,
careful device layout and circuit operating conditions
need to be taken into account.
The following discussions will assume the load switch is
mounted on a printed circuit board utilizing the minimum
recommended footprint, as stated in the Layout
Considerations section of this datasheet.
At any given ambient temperature (TA), the maximum
package power dissipation can be determined by the fol-
lowing equation:
PD(MAX) [TJ(MAX) - TA]
θJA
=
Constants for the AAT4280 are maximum junction tem-
perature, TJ(MAX) = 125°C, and package thermal resis-
tance, ΘJA = 120°C/W. Worst case conditions are calcu-
lated at the maximum operating temper ature where TA =
85°C. Typical conditions are calculated under normal
ambient conditions where TA = 25°C. At TA = 85°C,
PD(MAX) = 333mW. At TA = 25°C, PD(MAX) = 833mW.
The maximum continuous output current for the AAT4280
is a function of the package power dissipation and the
RDS of the MOSFET at TJ(MAX). The maximum RDS of the
MOSFET at TJ(MAX) is calculated by increasing the maxi-
mum room temperature RDS by the RDS temperature
coefficient. The temperature coefficient (TC) is
2800ppm/°C. Therefore,
MAX RDS125°C = RDS25°C · (1 + TC · ΔT)
MAX RDS125°C = 120mΩ · (1 + 0.0028 ·
(125°C - 25°C)) = 154mΩ
For maximum current, refer to the following equation:
IOUT(MAX) PD(MAX)
RDS
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