IRF640, SiHF640
www.vishay.com Vishay Siliconix
S15-2667-Rev. C, 16-Nov-15 2Document Number: 91036
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 -
Maximum Junction-to-Case (Drain) RthJC -1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 200 V, VGS = 0 V - - 25 μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 11 A b - - 0.18
Forward Transconductance gfs VDS = 50 V, ID = 11 A b6.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 1300 -
pFOutput Capacitance Coss -430-
Reverse Transfer Capacitance Crss -130-
Total Gate Charge Qg
VGS = 10 V ID = 18 A, VDS =160 V,
see fig. 6 and 13 b
--70
nC Gate-Source Charge Qgs --13
Gate-Drain Charge Qgd --39
Turn-On Delay Time td(on)
VDD = 100 V, ID = 18 A,
Rg = 9.1 , RD = 5.4, see fig. 10 b
-14-
ns
Rise Time tr -51-
Turn-Off Delay Time td(off) -45-
Fall Time tf -36-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Gate Input Resistance Rgf = 1 MHz, open drain 0.5 - 3.6
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--18
A
Pulsed Diode Forward Current a ISM --72
Body Diode Voltage VSD TJ = 25 °C, IS = 18 A, VGS = 0 V b--2.0V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b- 300 610 ns
Body Diode Reverse Recovery Charge Qrr -3.47.1μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)