N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – NOVEMBER 2005
FEATURES
*60 Volt V
DS
*R
DS(on)=5Ω
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb
= 25°C ID270 mA
Pulsed Drain Current IDM 3A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb
= 25°C Ptot 625 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS 60 V ID=100µA, VGS
=0V
Gate-Source Threshold
Voltage
VGS(th) 0.8 2.5 V ID=1mA, VDS
= VGS
Gate Body Leakage IGSS 100 nA VGS
=± 20V, VDS
=0V
Zero Gate Voltage
Drain Current (1)
IDSS 10 µAVDS
=60 V, VGS
=0V
On State Drain
Current(1)
ID(on) 750 mA VDS
=15 V, VGS
=10V
Static Drain Source On
State Resistance (1)
RDS(on) 5.0
7.5
Ω
Ω
VGS
=10V,ID=500mA
VGS
=5V, ID=200mA
Forward
Transconductance
(1)(2)
gfs 100 mS VDS
=15V,ID=500mA
Input Capacitance (2) Ciss 60 pF
Common Source
Output Capacitance (2)
Coss 25 pF VDS
=25 V, VGS
=0V
f=1MHz
Reverse Transfer
Capacitance (2)
Crss 5pF
Turn-On Time (2)(3) t(on) 10 ns VDD
≈15V, ID=600mA
Turn-Off Time (2)(3) t(off) 10 ns
E-Line
TO92 Compatible
VN10LP
3-90
D
G
S
