NDT456P - National Semiconductor

July 1996

NDT456P

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

_______________________________________________________________________________

Absolute Maximum Ratings TA = 25°C unless otherwise noted

SymbolParameter NDT456PUnits

VDSS Drain-Source Voltage -30 V

VGSS Gate-Source Voltage ±20 V

IDDrain Current- Continuous (Note 1a) ±7.5A

- Pulsed±20

PDMaximum Power Dissipation (Note 1a) 3W

(Note 1b) 1.3

(Note 1c) 1.1

TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W

NDS456P Rev. E

-7.5 A, -30 V. RDS(ON) = 0.03 Ω @ VGS = -10 V

RDS(ON) = 0.45 Ω @ VGS = -4.5 V

High density cell design for extremely low RDS(ON).

High power and current handling capability in a

widely used surface mount package.

Power SOT P-Channel enhancement mode power

field effect transistors are produced using

National's proprietary, high cell density, DMOS

technology. This very high density process is

especially tailored to minimize on-state resistance

and provide superior switching performance. These

devices are particularly suited for low voltage

applications such as notebook computer power

management, battery powered circuits, and DC

motor control.

D

DS

G

D

S

G

N

Electrical Characteristics (TA = 25°C unless otherwise noted)

SymbolParameter Conditions Min TypMax Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA -30 V

IDSS Zero Gate Voltage Drain CurrentVDS = -24 V, VGS = 0 V -1 µA

TJ = 55°C -10 µA

IGSSF Gate - Body Leakage, ForwardVGS = 20 V, VDS = 0 V100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V-100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = - 250 µA -1 -1.5 -3 V

TJ = 125°C -0.5 -1.1 -2.6

RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -7.5 A 0.0260.03Ω

TJ = 125°C 0.0350.054

VGS = - 4.5 V, ID = -6 A 0.0410.045

ID(on) On-State Drain CurrentVGS = -10 V , VDS = - 5 V -20 A

VGS = -4.5 V, VDS = - 5 V -10

Gfs Forward Transconductance VGS = -10 V, ID = -7.5 A13 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -15 V, VGS = 0 V,

f = 1.0 MHz

1440 pF

Coss Output Capacitance 905 pF

Crss Reverse Transfer Capacitance 355 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)Turn - On Delay Time VDD = -15 V, ID = -7 A,

VGEN = -10 V, RGEN = 12 Ω10 20 ns

trTurn - On Rise Time 65 120 ns

tD(off) Turn - Off Delay Time 70 130 ns

tfTurn - Off Fall Time 70 130 ns

QgTotal Gate Charge VDS = -10 V,

ID = -7.5 A, VGS = -10 V

47 67 nC

Qgs Gate-Source Charge 5nC

Qgd Gate-Drain Charge 12 nC

NDS456P Rev. E

Electrical Characteristics (TA = 25°C unless otherwise noted)

SymbolParameter Conditions Min TypMax Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current-2.5 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = - 2.5 A (Note 2) - 0.85 -1.2 V

trr Reverse Recovery Time VGS = 0 V, IF = - 2.5 A dIF/dt = 100 A/µs 140 ns

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference

PD

(

t

)

=

T

J

−T

A

R

θJA

(t)=

T

J

−T

A

R

θJC

+R

θCA

(t)=ID

2

(

t

)

×RDS(ON)@T

J

is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is defined by users. For general reference: Applications on 4.5"x5"

FR-4 PCB under still air environment, typical RθJA is found to be:

a. 42oC when mounted on a 1 in2 pad of 2oz copper.

b. 95oC when mounted on a 0.066in2 pad of 2oz copper.

c. 110oC/W when mounted on a 0.00123in2 pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDS456P Rev. E

1a 1b 1c

NDS456P Rev. E

-50 -25 0 25 50 75 100 125 150

0.5

0.75

1

1.25

1.5

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = -10V

GS

I =-7.5A

D

R , NORMALIZED

DS(ON)

-20-16-12-8-40

0.5

1

1.5

2

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

D

R , NORMALIZED

DS(on)

V =-3.5V

GS

-10

-5.0

-7.0

-4.5

-4.0

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Gate Voltage and Drain Current.

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Drain Current and Temperature.

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation

with Temperature.

-4-3.2-2.4-1.6-0.8

-20

-16

-12

-8

-4

0

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25125

V =- 10V

DS

GS

D

T = -55°C

J

-20-16-12-8-40

0

0.5

1

1.5

2

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -10V

GS

T = 125°C

J

25°C

-55°C

D

R , NORMALIZED

DS(on)

-50 -25 025 50 75 100 125 150

0.6

0.7

0.8

0.9

1

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

J

V , NORMALIZED

GS(th)

I =- 250µA

D

V = VGS

DS

-3-2-10

-20

-16

-12

-8

-4

0

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -10V

GS

DS

D

-3.5

-4.0

-3.0

-2.5

-4.5

-5.0

-6.0

NDS456P Rev. E

-50 -25 0 25 50 75 100 125 150

0.94

0.96

0.98

1

1.02

1.04

1.06

1.08

1.1

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I =- 250µA

D

BV , NORMALIZED

DSS

J

00.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

1

5

20

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

0 10 20 30 40 50 60

0

2

4

6

8

10

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

g

GS

I = -7.5A

D-10V

-20V

V =- 5V

DS

0.1 0.2 0.5 1 2 5 10 20 30

200

300

400

500

1000

2000

3000

4000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

f = 1 MHz

V = 0V

GS

C

oss

C

iss

C

rss

Figure 7. Breakdown Voltage

Variation with Temperature. Figure 8. Body Diode Forward Voltage

Variation with Current and

Temperature.

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

Typical Electrical Characteristics

Figure 11. Switching Test Circuit.Figure 12. Switching Waveforms.

D

S

-VDD

RL

VOUT

VGS

DUT

VIN

RGEN G10%

50%

90%

10%

90%

50%

VIN

VOUT

on off

d(off) f

r

d(on)

t t

tt

t

INVERTED

10%

PULSE WIDTH

NDS456P Rev. E

Typical Thermal Characteristics

-10-8-6-4-20

0

3

6

9

12

15

18

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

25°C

D

FS

V = -5V

DS

125°C

T = -55°C

J

Figure 13. Transconductance Variation

with Drain Current and Temperature.

00.2 0.4 0.6 0.8 1

0.5

1

1.5

2

2.5

3

3.5

2oz COPPER MOUNTING PAD AREA (in )

STEADY-STATE POWER DISSIPATION (W)

2

1c

1b

1a

4.5"x5" FR-4 Board

T = 25 C

Still Air

Ao

Figure 14. SOT-223 Maximum

Steady-State Power Dissipation

versus Copper Mounting Pad Area.

Figure 17. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c.

Transient thermal response will change depending on the circuit board design.

Figure 16. Maximum Safe Operating Area.

00.2 0.4 0.6 0.8 1

0

2

4

6

8

10

2oz COPPER MOUNTING PAD AREA (in )

-I , STEADY-STATE DRAIN CURRENT (A)

2

1c

1b

1a

4.5"x5" FR-4 Board

T = 25 C

Still Air

V = -10V

Ao

GS

D

0.1 0.2 0.5 1 2 5 10 30 50

0.01

0.03

0.1

0.3

1

3

10

20

40

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

DS

D

RDS(ON) LIMIT

V = -10V

SINGLE PULSE

R = See Note 1c

T = 25°C

GS

A

θJA

100ms

10s

DC

10ms

1ms

1s

100us

Figure 15. Maximum Steady-State

Drain Current versus Copper

Mounting Pad Area.

0.0001 0.001 0.01 0.1 110 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

12

R (t) = r(t) * R

R = See Note 1 c

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2