2003-05-09
Page 1
SPI100N03S2-03
SPP100N03S2-03,SPB100N03S2-03
OptiMOS Power-Transistor Product Summary
VDS 30 V
RDS(on) max. SMD version 3mΩ
I
D
100 A
Feature
• N-Channel
• Enhancement mode
• Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1
Marking
PN0303
PN0303
PN0303
Type Package Ordering Code
SPP100N03S2-03 P- TO220 -3-1 Q67042-S4058
SPB100N03S2-03 P- TO263 -3-2 Q67042-S4057
SPI100N03S2-03 P- TO262 -3-1 Q67042-S4116
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current1)
TC=25°C
ID
100
100
A
Pulsed drain current
TC=25°C
ID puls 400
Avalanche energy, single pulse
ID=80A, VDD=25V, RGS=25Ω
EAS 810 mJ
Repetitive avalanche energy, limited by Tjmax2) EAR 30
Reverse diode dv/dt
IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
dv/dt6kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC=25°C
Ptot 300 W
Operating and storage temperature T
j
, T
stg
-55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
2003-05-09
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SPI100N03S2-03
SPP100N03S2-03,SPB100N03S2-03
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC -0.3 0.5 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS 30 - - V
Gate threshold voltage, VGS = VDS
ID =250µA
VGS(th) 2.1 3 4
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
IDSS
-
-
0.01
1
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS -1 100 nA
Drain-source on-state resistance
VGS=10V, ID=80A
VGS=10V, ID=80A, SMD version
RDS(on)
-
-
2.5
2.2
3.3
3
mΩ
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 233A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2003-05-09
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SPI100N03S2-03
SPP100N03S2-03,SPB100N03S2-03
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=100A
71 142 -S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
-5300 7020 pF
Output capacitance Coss -2450 3200
Reverse transfer capacitance Crss -470 700
Turn-on delay time td(on) VDD=15V, VGS=10V,
ID=100A,
RG=2.2Ω
-24 36 ns
Rise time tr-40 60
Turn-off delay time td(off) -44 66
Fall time tf-39 59
Gate Charge Characteristics
Gate to source charge Qgs VDD=24V, ID=100A -26 34 nC
Gate to drain charge Qgd -45 68
Gate charge total QgVDD=24V, ID=100A,
VGS=0 to 10V
-113 150
Gate plateau voltage V(plateau) VDD=24V, ID=100A -5.6 -V
Reverse Diode
Inverse diode continuous
forward current ISTC=25°C - - 100 A
Inv. diode direct current, pulsed ISM - - 400
Inverse diode forward voltage VSD VGS=0V, IF=100A -0.9 1.3 V
Reverse recovery time trr VR=15V, IF=lS,
diF/dt=100A/µs
-79 100 ns
Reverse recovery charge Qrr -109 136 nC
2003-05-09
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SPI100N03S2-03
SPP100N03S2-03,SPB100N03S2-03
1 Power dissipation
Ptot = f (TC)
parameter: VGS≥ 6 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
40
80
120
160
200
240
W
320 SPP100N03S2-03
Ptot
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
10
20
30
40
50
60
70
80
90
A
110 SPP100N03S2-03
ID
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W SPP100N03S2-03
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 -1 10 0 10 1 10 2
VVDS
1
10
2
10
3
10
A
SPP100N03S2-03
ID
R DS(on) = V
DS / I D
1 ms
100 µs
tp = 20.0µs
2003-05-09
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SPI100N03S2-03
SPP100N03S2-03,SPB100N03S2-03
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4V5
VDS
0
20
40
60
80
100
120
140
160
180
200
A
240 SPP100N03S2-03
ID
VGS [V]
a
a4.5
b
b4.8
c
c5.0
d
d5.2
e
e5.5
f
f5.8
gg6.0
h
h7.0
i
Ptot = 300W
i10.0
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 20 40 60 80 100 A140
ID
0
1
2
3
4
5
6
7
8
9
Ω
11 SPP100N03S2-03
RDS(on)
VGS [V] =
f
f
5.8
g
g
6.0
h
h
7.0
i
i
10.0
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
0 1 2 3 4 5 V 7
VGS
0
20
40
60
80
100
120
140
160
A
200
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
0 20 40 60 80 100 120 140 160 A 200
ID
0
20
40
60
80
100
120
140
S
180
gfs
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SPI100N03S2-03
SPP100N03S2-03,SPB100N03S2-03
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 80 A, VGS = 10 V
-60 -20 20 60 100 140 °C 200
Tj
0
1
2
3
4
5
6
Ω
8 SPP100N03S2-03
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 180
Tj
0
0.5
1
1.5
2
2.5
3
V
4
VGS(th)
268 µA
1.34 mA
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 5 10 15 20 V30
VDS
2
10
3
10
4
10
5
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
00.4 0.8 1.2 1.6 22.4 V3
VSD
0
10
1
10
2
10
3
10
A
SPP100N03S2-03
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
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SPI100N03S2-03
SPP100N03S2-03,SPB100N03S2-03
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 80 A, VDD = 25 V, RGS = 25 Ω
25 45 65 85 105 125 145 °C 185
Tj
0
100
200
300
400
500
600
700
mJ
850
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 100 A pulsed
0 20 40 60 80 100 120 140nC 170
QGate
0
2
4
6
8
10
12
V
16 SPP100N03S2-03
VGS
0,8 VDS max
DS max
V0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 140 °C 200
Tj
27
28
29
30
31
32
33
34
V
36 SPP100N03S2-03
V(BR)DSS
2003-05-09
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SPI100N03S2-03
SPP100N03S2-03,SPB100N03S2-03
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP100N03S2-03, BSPB100N03S2-03 and BSPI100N03S2-03, for
simplicity the device is referred to by the term SPP100N03S2-03, SPB100N03S2-03 and SPI100N03S2-03
throughout this documentation
