DSSK48-003BS
Schottky Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
300
IA
V
F
0.44
R1.20 K/W
V
R
=
1 2 3
min.
25
t = 10 ms
Applications:
V
RRM
V
30
20
T
VJ
V°C=
T
VJ
°C=mA
60
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=130°C
d =
P
tot
105 WT
C
°C=
T
VJ
150 °C
-55
V
I
RRM
=
=30
25
20
T
VJ
=45°C
DSSK48-003BS
V
A
30
V30
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
0.54
T
VJ
°C=25
C
J
j
unction capacitance V= V;5T
100
V
F0
V
0.19
T
VJ
=150°C
r
F
6.8 Ω
f = 1 MHz = °C25
m
V
0.35
T
VJ
=°C
I
F
=A
V
20
0.48
I
F
=A40
I
F
=A40
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
=0.35
V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
TO-263 (D2Pak)
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
mA
1.77 nF
thermal resistance junction to case
thJC
rectangular 0.5
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20100209a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
DSSK48-003BS
I
RMS
A
per pin 35
R
thCH
K/W0.25
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N60
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSSK48-003BS 484326Tape & Reel 800
Product Marking
Date Code
Part No.
Logo
Order Code
XXXXXXXXX
IXYS
yww
abcd
DSSK48-003B
DSSK48-0025B
TO-220AB (3)
TO-220AB (3)
Similar Part Package
1)
1
)
Marking on Pr oduct
DSSK48-003BS
30
25
Voltage class
RMS
IXYS reserves the right to change limits, conditions and dimensions. 20100209a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
DSSK48-003BS
min max min max
A 4.06 4.83 0.160 0.190
A1
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.029
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
E 9.65 10.41 0.380 0.410
E1 6.22 8.20 0.245 0.323
e
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
L2 1.02 1.52 0.040 0.060
Wtyp.
0.02 0.040 typ.
0.0008 0.0016
All dimensions conform with and/or are within
JEDEC standard.
Dim. Millimeter Inches
2,54 BSC
typ. 0.10 typ. 0.004
0,100 BSC
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20100209a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
DSSK48-003BS
0.0 0.2 0.4 0.6
10
20
30
40
0102030
0.01
0.1
1
10
100
1000
10000
010203040
0
4
8
12
16
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 40 80 120 160
0
20
40
0102030
100
1000
10000
DC
125°C
25°C
150°C
T
VJ
=
25°C
50°C
75°C
100°C
125°C
T
VJ
=150°C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
T
VJ
=25°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t[ms]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
I
F(AV)
[A]
IXYS reserves the right to change limits, conditions and dimensions. 20100209a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
