Order this document by 2N6836/D SEMICONDUCTOR TECHNICAL DATA These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. 15 AMPERE NPN SILICON POWER TRANSISTOR 450 VOLTS 175 WATTS * * * * * Switching Regulators Inverters Motor Controls Deflection Circuits Fast Turn-Off Times 30 ns Inductive Fall Time -- 75_C (Typ) 50 ns Inductive Crossover Time -- 75_C (Typ) 600 ns Inductive Storage Time -- 75_C (Typ) * Operating Temperature Range -65 to + 200_C * 100_C Performance Specified for: Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents CASE 1-07 TO-204AA (TO-3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII v MAXIMUM RATINGS (2) Rating Symbol Max Unit Collector-Emitter Voltage VCEO(sus) 450 Vdc Collector-Emitter Voltage VCEV 850 Vdc Emitter Base Voltage VEB 6.0 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 15 20 Adc Base Current -- Continuous -- Peak (1) IB IBM 10 15 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD 175 100 1.0 Watts TJ, Tstg - 65 to + 200 _C Symbol Max Unit RJC 1.0 _C/W TL 275 _C Operating and Storage Junction Temperature Range W/_C THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5.0 Seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle (2) Indicate JEDEC Registered Data. 10%. Designer's and SWITCHMODE are trademarks of Motorola, Inc. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 3-1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6836 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIII IIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIII IIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450* -- -- Vdc -- -- -- -- 0.25* 1.5* OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = 850 Vdc, RBE = 50 , TC = 100_C) ICER -- -- 2.5 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO -- -- 1.0* mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 15* RBSOA See Figure 16 ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.7 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc, TC = 100_C) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc, TC = 100_C) VBE(sat) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) Vdc -- -- -- -- -- -- 1.2 2.5* 3.0* -- -- -- -- 1.5* 1.5 8.0* 5.0 -- -- 30* -- fT 10* -- 75* MHz Cob 50* -- 400* pF td -- 20 100* ns Vdc hFE -- DYNAMIC CHARACTERISTICS (2) Current Gain -- Bandwidth Product (VCE = 10 Vdc, IC = 0.25 Adc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time Storage Time (IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.0 Adc, PW = 30 s, Duty Cycle 2.0%) (IB2 = 2.6 Adc, RB2 = 1.6 ) (VBE(off) = 5.0 Vdc) Fall Time tr -- 200 500* ts -- 1200 3000* tf -- 200 250* ts -- 650 -- tf -- 80 -- tsv -- 800 1500* tfi -- 50 150* tc -- 90 200* tsv -- 1050 -- tfi -- 70 -- tc -- 120 -- Inductive Load (Table 2) Storage Time Fall Time Crossover Time Storage Time Fall Time (IC = 10 Adc, IB1 = 1.0 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) Crossover Time (1) Pulse Test: PW 300 s, Duty Cycle (2) fT = |she| ftest. * Indicates JEDEC Registered Limit. 3-2 (TC = 100_C) (TC = 150_C) ns 2%. Motorola Bipolar Power Transistor Device Data 2N6836 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 50 hFE, DC CURRENT GAIN TC = 100C 25C 20 10 5.0 VCE = 5.0 V 3.0 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 2.0 0.7 0.3 5A IC = 1 A 0.2 TC = 25C 0.1 20 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMPS) 2.0 5.0 10 Figure 2. Collector Saturation Region 1.5 5.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 A 0.5 Figure 1. DC Current Gain 3.0 2.0 1.0 0.70 0.50 f = 10 TJ = 25C 0.30 0.20 f = 10 TJ = 100C f = 5 TJ = 25C 0.10 0.07 0.05 0.15 0.2 0.3 2.0 3.0 0.5 0.7 1.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) f = 10 1.0 75C 0.50 0.30 0.20 0.15 0.15 0.20 0.30 15 C, CAPACITANCE (pF) 103 TJ = 150C 125C 100C 75C REVERSE FORWARD VCE = 250 V 25C 10-1 - 0.4 - 0.2 2.0 3.0 5.0 7.0 10 15 Figure 4. Base-Emitter Voltage 5000 3000 2000 100 0.50 0.70 1.0 IC, COLLECTOR CURRENT (AMPS) 10000 101 100C 0.40 104 102 TC = 25C 0.70 Figure 3. Collector-Emitter Saturation Voltage IC, COLLECTOR CURRENT ( A) 15 A 1.0 Cib 1000 500 300 200 Cob 100 50 TC = 25C 20 0 + 0.2 + 0.4 + 0.6 10 0.1 VBE, BASE-EMITTER VOLTAGE (VOLTS) 10 1.0 100 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 850 3-3 2N6836 TYPICAL DYNAMIC CHARACTERISTICS t sv , STORAGE TIME (ns) 3000 2000 1000 5000 VBE(off) = 0 VOLTS 3000 VBE(off) = 2.0 VOLTS t sv , STORAGE TIME (ns) 5000 VBE(off) = 5.0 VOLTS 500 300 200 f = 5 TC = 75C VCC = 20 VOLTS 100 0.07 0.05 1.5 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 VBE(off) = 0 VOLTS 2000 VBE(off) = 2.0 VOLTS 1000 700 500 VBE(off) = 5.0 VOLTS 300 200 f = 10 TC = 75C VCC = 20 VOLTS 100 0.05 15 1.5 2.0 1000 VBE(off) = 0 VOLTS 500 300 200 VBE(off) = 5.0 VOLTS VBE(off) = 2.0 VOLTS 100 50 f = 5 TC = 75C VCC = 20 VOLTS 20 10 1.5 2.0 7.0 3.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 500 VBE(off) = 0 VOLTS 300 200 VBE(off) = 2.0 VOLTS 100 50 f = 10 TC = 75C VCC = 20 VOLTS 20 10 15 1.5 t c , CROSSOVER TIME (ns) t c , CROSSOVER TIME (ns) VBE(off) = 0 VOLTS 300 200 VBE(off) = 5.0 VOLTS f = 5 TC = 75C VCC = 20 VOLTS 50 20 15 1.5 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) Figure 11. Crossover Time 3-4 10 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 15 1500 1000 VBE(off) = 2.0 VOLTS 100 2.0 VBE(off) = 5.0 VOLTS Figure 10. Collector Current Fall Time 1500 500 15 1000 Figure 9. Collector Current Fall Time 1000 10 Figure 8. Storage Time t fi , COLLECTOR CURRENT FALL TIME (ns) t fi , COLLECTOR CURRENT FALL TIME (ns) Figure 7. Storage Time 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 15 VBE(off) = 0 VOLTS 500 300 200 VBE(off) = 2.0 VOLTS 100 50 20 15 f = 10 TC = 75C VCC = 20 VOLTS 1.5 2.0 VBE(off) = 5.0 VOLTS 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 12. Crossover Time Motorola Bipolar Power Transistor Device Data 15 2N6836 10 VCE(pk) 90% VCE(pk) IC tsv I B2 , REVERSE BASE CURRENT (AMPS) IC pk 90% IC(pk) trv tfi tti tc VCE IB 90% IB1 10% 2% IC IC pk 10% VCE(pk) 9 8 IB1 = 2.0 AMPS 7 6 5 4 IB1 = 1.0 AMPS 3 IC = 10 AMPS TC = 25C 2 1 0 TIME 1.0 2.0 3.0 4.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 0 5.0 Figure 14. Peak Reverse Base Current Figure 13. Inductive Switching Measurements IC(pk) , PEAK COLLECTOR CURRENT (AMPS) GUARANTEED SAFE OPERATING AREA LIMITS IC, COLLECTOR CURRENT (AMPS) 20 10 s 10 5.0 1 ms 2.0 1.0 dc TC = 25C 0.50 0.10 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.05 0.02 5.0 200 300 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 450 Figure 15. Maximum Forward Bias Safe Operating Area 20 18 14 w4 v 100C VBE(off) = 1 to 5 V Bf TC 10 VBE(off) = 0 V 6.0 2.0 0 100 150 200 250 350 450 600 700 850 VCE, PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 16. Maximum Reverse Bias Safe Operating Area SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25 _C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 18. TJ(pk) may be calculated from the data in Figure 17. At high case temperatures, thermal limitations will reduce the power w Motorola Bipolar Power Transistor Device Data that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 16 gives the RBSOA characteristics. 3-5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6836 1.0 RJC(t) = r(t) RJC RJC = 1.0C/W TJ(pk) - TC = P(pk) RJC(t) 0.1 0.01 0.01 0.1 1.0 10 t, TIME (ms) 100 1k Figure 17. Thermal Response POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 40 THERMAL DERATING 20 0 0 40 80 120 160 TC, CASE TEMPERATURE (C) 200 Figure 18. Power Derating Table 1. Resistive Load Switching td and tr + Vdc ts and tf 0V [ - 35 V H.P. 214 OR EQUIV. P.G. TUT RB = 10 50 Vin 0V tr v 15 ns 10 F RB1 0.02 F A 0.02 F RB2 1.0 F VCC [ 11 V 2N6191 + - H.P. 214 OR EQUIV. P.G. RL 100 20 *IC *IB [ 11 Vdc 50 2N5337 500 VCC = 250 Vdc RL = 25 IC = 10 Adc IB = 1.0 Adc 100 -V +V 0V -5V A TUT *Tektronix P-6042 or equivalent. *IB 50 VCC = 250 RL = 25 IC = 10 Adc IB1 = 1.0 Adc IB2 = 2.6 Adc For VBE(off) = 5.0 V *IC RL VCC RB1 = 10 RB2 = 1.6 RB2 = 0 *NOTE: Adjust - V to obtain desired VBE(off) at Point A. 3-6 Motorola Bipolar Power Transistor Device Data 2N6836 Table 2. Inductive Load Switching 0.02 F H.P. 214 OR EQUIV. P.G. +V 100 [ 11 V 20 2N6191 + 0V RB1 - 10 F A - 35 V 0.02 F RB2 1.0 F + - 50 2N5337 500 -V 100 T1 +V L -V A T1 [ VCE(pk) *IC 0V Lcoil (ICpk) VCC IC(pk) IC T.U.T. *IB 50 VCE VCE(pk) = VCE(clamp) MR856 Vclamp VCC T1 adjusted to obtain IC(pk) IB1 IB V(BR)CEO L = 10 mH RB2 = VCC = 20 Volts Inductive Switching L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 *Tektronix *P-6042 or *Equivalent Scope -- Tektronix 7403 or Equivalent Note: Adjust - V to obtain desired VBE(off) at Point A. R IB2 TYPICAL INDUCTIVE SWITCHING WAVEFORMS tsv IC(pk) = 10 Amps IB1 = 1.0 Amp VBE(off) = 5.0 Volts VCE(pk) = 400 Volts TC = 25C Time Base = 100 ns/cm tfi, tc VCE(pk) 0 I B1 IC(pk) = 10 Amps IB1 = 1.0 Amp VBE(off) = 5.0 Volts VCE(pk) = 400 Volts TC = 25C Time Base = 20 ns/cm IC(pk) t fi = 20 ns VCE(pk) VCE(sat) t sv = 370 ns I B2 Motorola Bipolar Power Transistor Device Data VCE(sat) tc 24 ns 3-7 2N6836 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 3-8 Motorola Bipolar Power Transistor Device Data *2N6836/D* 2N6836/D