FDS6912A - ON SEMICONDUCTOR

2003 Semiconductor Components Industries, LLC.

October-2017, Rev. 4 Publication Order Number:

FDS6912A/D

FDS6912A

Dual N-Channel Logic Level PowerTrench MOSFET

General Description

These N-Channel Logic Level MOSFETs are produced

using ON Semiconductor’s advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

•6 A, 30 V. RDS(ON) = 28 mΩ @ VGS = 10 V

RDS(ON) = 35 mΩ @ VGS = 4.5 V

•Fast switching speed

•Low gate charge

•High performance trench technology for extremely

low RDS(ON)

•High power and current handling capability

SO-8

D2 D2 D1 D1

S2G2S1G1

Pin 1

SO-8

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage ±20 V

IDDrain Current – Continuous (Note 1a) 6A

– Pulsed 20

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1.0

(Note 1c) 0.9

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6912A FDS6912A 13’’ 12mm 2500 units

FDS6912A

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Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C25 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

VDS = 24 V, VGS = 0 V, TJ = 55°C1

10 µA

IGSS Gate–Source Leakage VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)

VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250 µA11.9 3V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient ID = 250 µA, Referenced to 25°C–4.5mV/°C

RDS(on) Static Drain–Source

On–Resistance VGS = 10 V, ID = 6 A

VGS = 4.5 V, ID = 5 A

VGS = 10 V, ID = 6 A,TJ = 125°C

mΩ

ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A

gFS Forward Transconductance VDS = 10 V, ID = 6 A 25 S

Dynamic Characteristics

Ciss Input Capacitance 575 pF

Coss Output Capacitance 145 pF

Crss Reverse Transfer Capacitance

VDS = 15 V, V GS = 0 V,

f = 1.0 MHz

65 pF

RGGate Resistance VGS = 15 mV, f = 1.0 MHz 2.1 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time 8 16 ns

trTurn–On Rise Time 5 10 ns

td(off) Turn–Off Delay Time 23 37 ns

tfTurn–Off Fall Time

VDD = 15 V, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω

3 6 ns

QgTotal Gate Charge 5.8 8.1 nC

Qgs Gate–Source Charge 1.7 nC

Qgd Gate–Drain Charge

VDS = 15 V, ID = 6 A,

VGS = 5 V 2.1 nC

Drain–Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain–Source Diode Forward Current 1.3 A

VSD Drain–Source Diode Forward

Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.75 1.2 V

trr Diode Reverse Recovery Time 20 nS

Qrr Diode Reverse Recovery Charge IF = 6 A, diF/dt = 100 A/µs 10 nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when

mounted on a 0.5in2

pad of 2 oz copper

b) 125°C/W when

mounted on a 0.02

in2 pad of 2 oz

copper

c) 135°C/W when mounted on a

minimum mounting pad.

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS6912A

Typical Characteristics

00.5 11.5 2

, DRAIN-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

3.0V

4.5V

4.0V

VGS = 10.0V

3.5V

6.0V

0.6

1.4

1.8

2.2

0 4 8 12 16 20

, DRAIN CURRENT (A)

RDS(ON), NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = 3.5V

6.0V

5.0

4.5V

4.0

10.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

RDS(ON), NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

ID = 6A

VGS = 10.0V

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

246810

, GATE TO SOURCE VOLTAGE (V)

RDS(ON), ON-RESISTANCE (OHM)

ID = 3A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation with

Temperature. Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

1.5 22.5 33.5 4

VGS, GATE TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

TA = 125oC-55oC

VDS = 5V

25oC

0.0001

0.001

0.01

0.1

100

00.2 0.4 0.6 0.8 11.2

, BODY DIODE FORWARD VOLTAGE (V)

IS, REVERSE DRAIN CURRENT (A)

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6912A

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Typical Characteristics

0 2 4 6 8 10 12

Qg, GATE CHARGE (nC)

VGS, GATE-SOURCE VOLTAGE (V)

ID = 6A

VDS = 10V

15V

20V

200

400

600

800

0 5 10 15 20

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

Ciss

Crss

Coss

f = 1MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

100

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

DC10s 1s

100ms

100

RDS(ON) LIMIT

VGS = 10V

SINGLE PULSE

RθJA = 135oC/W

TA = 25oC

10ms1ms

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 135°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

RθJA(t) = r(t) * RθJA

RθJA = 135°C/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS6912A

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