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TOP
+ NC
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BACK
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate DIODE
MMBD4148E SWITCHING DIODE
DESCRIPTION
Epitaxial planar Silicon diode
FEATURES
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead Free Product
APPLICATION
High Conductance Ultra Fast Diode
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: A2
-
A2
+ NC
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Symbol Limite Unit
Non-Repetitive Peak re verse voltage VRM 100 V
Peak Repetitive Peak reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current IFM 300 mA
Averag e Rectified Outpu t Curren t IO 150 mA
Peak forward surg e current @=1.0µs
@=1.0s IFSM 2.0
1.0 A
Power Dissipation PD 150 mW
Thermal Resistance Junction to Ambient RθJA 625 ℃/W
Junction temperature Tj 125 ℃
Storage temperature TSTG -65~+150 ℃
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. ANODE
2. NC
3.CATHODE
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit. Conditions
VF1 0.715 V IF=1mA
VF2 0.855 V IF=10mA
VF3 1.0 V IF=50mA
Forward voltage
VF4 1.25 V IF=150mA
IR1 1 µA VR=75V
Reverse current IR2 25 nA VR=20V
Capacitance b etween terminals CT 2 pF VR=0V,f=1MHz
Reverse Recovery Time trr 4 ns IF=IR=10mA
Irr=0.1XIR,RL=100Ω
Typical Characteristics MMBD4148E
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.230 0.330 0.009 0.013
b1
D 1.550 1.650 0.061 0.065
E 1.550 1.650 0.061 0.065
D2
E2
e
L
L1
L2
L3
L4
k
z 0.320 RE F. 0.013 RE F.
0.160 RE F. 0.006 RE F.
Symbol D imensions In M illimeters D imensions In Inches
1.000 TYP. 0.040 TYP .
0.750 RE F.
1.000 REF. 0.030 RE F.
0.040 RE F.
0.320 REF. 0.013 RE F.
0.230 RE F.
0.180 RE F.
0.280 RE F. 0.011 RE F.
0.250 RE F.
0.200 RE F.
0.009 RE F.
0.007 RE F.
0.010 RE F.
0.008 RE F.
