F 2000A - Infineon Technologies

F 2000A

InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Optical Power)

InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power)

Vorläufige Date n / Preliminary Da ta

2002-07-10 1

Wesentliche Merkmale

• Optimierte Lichtauskopplung durch

Oberfläche nstrukturierung und Stromverteilung

• Chipgröße 300 x 300 µm2

• Wellenlänge: 617 nm

• Technologie:InGaAIP

• Typ. Lichtfluß: 3.5 lm @ 70 mA (gepulst, im

Power TOPLED® Gehäuse).

Anwendungen

•Ampeln

•Optischer Indikator

•Hinterleuchtung (LCD, Handy, Schalter,

Tasten, Displays, Werbebeleuchtung,

Allgemeinbeleuchtung)

•Beleuchtung im Automobilbereich

(z.B. Instrumentenbeleuchtung, Bremslichter

und Blinklichter)

•Ersatz von Kleinst-Glühlampen

•Markierungsbeleuchtung

•Signal- und Symbolleuchten

Typ

Type Bestellnummer

Ordering Code Beschreibung

Description

F 2000A Q-67220-C1447 Rot emittierender Chip mit optimierter Lichtauskopplung

durch Oberflächenstrukturierung, Oberseite Anodenan-

schluss

Red emitting chip with opti mize d light extracti on due to sur-

face structuring, top side anode connection

Feature

•Optimized light extraction due to surface

structuring and current distribution

•Chip size 300 x 300 µm2

•Wavelength (typ.): 617 nm

•Technology: InGaAIP

•Typ. luminous flux: 3.5 lm @ 70 mA (pulsed, i n

Power TOPLED® package)

Applications

•Traffic lights

•optical indicators

•Backlighting (LCD, cellular phones, switches,

keys, displays, illuminated advertising,general

lighting)

•Automotive lighting (e.g. dashboard

backlighting, brake lights, turn signal lamps,

etc.)

•Substitution of micro incandescent lamps

•Marker lights

•Signal and symbol luminaire

2002-07-10 2

F 2000A

Elektrische Werte (TA = 25 °C)

Electrical values1) (TA = 25 °C)

Bezeichnung

Parameter Symbol

Symbol Wert

Value2) Einheit

Unit

min. typ. max.

Dominantwellenlänge

Dominant wavelength

IF = 20 mA

λdom 613 623 nm

Spektrale Bandbreite bei 50% von Imax,

Spectral bandwidth at 50% of Imax

IF = 20 mA

∆λ 20 nm

Sperrspannung

Reverse voltage

IR = 10µA

VR12 V

Durchlaβspannung

Forward voltage

IF = 20 mA

VF2.3 V

Lichtstärke

Luminous Intensity 3)

IF = 20 mA

ΙV85 100 mcd

1) Measurement l i mit s d e scribe actual set tin gs an d do not in clu de measurement uncertain ti es. Each wafer a nd f r ag ment

of a wafer is subj ect to final testi ng. The wafer o r its pieces are i ndividually at tached on foils (ri ngs). Sample chips a re

picked from each foil and placed on a special carrier for measurement purposes.

Sample-test: Sampling density/samples per cm² (grid): 1,6/cm².

If a sample fails, the distance area to the next non- failure sample s is manually remove d by a vacuum t ool.

All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)

2) Typical (re fere d to as ty p.) dat a a re def i ned as l on g- te rm production me an va lu es and are only given for information .

This is no t a specified value

3) Measured in axial d irection

F 2000A

2002-07-10 3

Mechanische Werte

Mechanical values

Bezeichnung

Parameter Symbol

Symbol Wert

Value1) Einheit

Unit

min. typ. max.

Chipkantenlänge (x-Richtun g)

Length of chip edge (x-direction) Lx0.28 0.3 0.32 mm

Chipkantenlänge (y-Richtun g)

Length of chip edge (y-direction) Ly0.28 0.3 0.32 mm

Durchmesser des Wafers

Diameter of the wafer D100 mm

Chiphöhe

Die height H200 220 240 µm

Bondpaddurchmesser

Diameter of bondpad d109 114 119 µm

Weitere Informationen

Additional information2)

Vorderseitenmetallisierung

Metallization frontside Aluminium

Aluminum

Rückseitenmetallisierung

Metallization backside Goldlegierung

Gold alloy

Trennverfahren

Dicing Sägen

Sawing

Verbindung Chip - Träger

Die bonding Kleben

Epoxy bonding

1) Typical (ref ered t o a s typ.) d at a are def in ed a s long-term pro duc ti on mean values and a r e onl y g iv en f or inf orma tion.

This is no t a specified value

2) All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection

A63501-Q0013-N001-*-76G3:

The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The

visual inspection of chip backside is performed with stereo microscope with inciden t light with 40x-80x magnification.

Areas > ¼ cm² which have an amount of more than 3% failed dies will be removed. The visual inspection of chip

frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of

each wafer. Areas > 1 cm² which have an amount of more than 50% failed dies and areas > 2 cm² which have an

amount of more t ha n 2 5% failed dies will be removed. In areas wi th f ai l ure densi t y h ig her th an 1% each f ailu r e d ie i s

inked individually. The quality inspection (final visual inspection) is performed by production. An additional visual

inspection step as special release procedure by QM after the final visual inspection is not installed.

F 2000A

2002-07-10 4

Grenzwerte1)

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Maximaler Betriebstemperaturbereich

Maximum Operating temperature range Top -40...+100 °C

Maximaler Lagertemperaturbereich

Maximum storage temperature range Tstg -40...+100 °C

Maximaler Durchlaßstrom (TA = 25°C)

Maximum forward current (TA = 25°C) IF70 mA

Maximaler Pulsstrom (TA = 25°C)

Maximum surge Current (TA = 25°C)

tp = 10 µs, D = 0.05

Ipeak 0.1 A

Maximale Sperrschichttemperatur

Maximum junction temperature Tj125 °C

1)Maximum ratings are strongly package dependent and may differ between different packages. The values given

represent the chip in an OSRAM Opto Semico nductor’s Power TOPLED® package.

F 2000A

2002-07-10 5

Durchlassstrom1) IF = f (VF)

Forward Cu rrent

TA = 25 °C

Zulassige Impulsbelastbarkeit1) IF = f (tP)

Permissible Pulse Handling Capability

Duty cycle D = parameter, TA = 25 °C

1) Based on typ.(see page 2, footnote 2 for explanation)

data measured in OSRAM Opto Semiconductor’s

TOPLED® package.

Relativ e Lich tstärke1) IV/IV(50mA) = f (IF)

Relative Luminous Intensity

TA = 25 °C

Zulassige Impulsb el astbarkeit1) IF = f (tP)

Permissible Pulse Handling Capability

Duty cycle D = parameter, TA = 85 °C

OHL01382

1.3

1.5 1.7 1.9 2.1 2.3 2.5

102

-3

-2

10-1

100

101

OHL01505

0.02

0.04

0.06

0.08

0.1

0.12

-5

10 -4

10 -3

10 -2

10 -1

10 0

10 1

10 2

0.005

0.05

0.5

OHL00437

-1

V (50 mA)

-3

-2

-1

55mA

OHL01506

0.02

0.04

0.06

0.08

0.10

0.12

-5

-4

-3

-2

-1

0.005

0.05

0.5

2002-07-10 6

F 2000A

Maßzeichnung

Chip Outlines

Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as

follows: mm (inch).

Published by OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform ation gen erally descri bes the type of compone nt and shall not be considered as assured ch aracteristic s or

detaile d sp ec if ic at ion.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substanc es . For information on the types in question ple as e c ont ac t our s ales organization.

Handling and Storage Conditions:

The hermetically sealed shipment lot shall be opened under temperature and moisture controlled cleanroom

environment only. Customer has to follow the according rules for disposition of material that can be hazardous for

humans and environment.

Packing

Chips are placed on a blue foil, wh ic h is fixed in a yellow frame of 5” diameter.

For shipment the wafers of a shipment lot are arranged to stacks. The stacks are hermetically sealed in plastic bags to

achieve protection against environ m ent al influence (hum idit y & co nt am ination).

Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.

By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Further Conditions:

If not otherwise arranged, the “General Conditions for the supply of products and services of the electrical and

electronics industry” apply for any shipment, just as the Supplier Addendum " Chip business" to the “General Conditions

for the supply of products and services of the electrical and electronics industry”. If these documents are not familiar to

you, please request them at our nearest sales office.

Com pon en ts used in life-su pport device s or systems must be ex pressly autho r ized b y us for such purpose!

Critical components2), may only be used in life-support devices or systems3) with the express written approval of

OSRAM OS.

1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.

This is no t a specified val ue.

2)A critical comp onent is a component used in a life-supp ort device or system whose fail ure can reasonably be expec ted to

cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

3)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

0.3(0.0118)

0.114(0.0045)

0.22(0.0087)

n-contact

p-contact