MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M 6-Pin DIP Random-Phase Triac Driver Output Optocoupler (250/400 V Peak) www.onsemi.com Description The MOC301XM and MOC302XM series are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral switch, which functions like a triac. They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 VAC operations. PDIP6 8.51x6.35, 2.54P CASE 646BY PDIP6 8.51x6.35, 2.54P CASE 646BZ Features * Excellent IFT Stability - IR Emitting Diode Has Low Degradation * Peak Blocking Voltage 250 V, MOC301XM 400 V, MOC302XM Safety and Regulatory Approvals UL1577, 4,170 VACRMS for 1 Minute DIN EN/IEC60747-5-5 These are Pb-Free Devices PDIP6 8.51x6.35, 2.54P CASE 646BX * * ANODE 1 6 MAIN TERM. Applications * * * * * * * * * Industrial Controls Solenoid/Valve Controls Traffic Lights Static AC Power Switch Vending Machines Incandescent Lamp Dimmers Solid State Relay Motor Control Lamp Ballasts 5 NC* CATHODE 2 N/C 3 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) Figure 1. Schematic ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 May, 2018 - Rev. 1 1 Publication Order Number: MOC3023M/D MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Characteristics Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I-IV < 300 VRMS I-IV Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1275 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm Distance Through Insulation (Insulation Thickness) 0.5 mm VPR DTI RIO Parameter > Insulation Resistance at TS, VIO = 500 V www.onsemi.com 2 109 W MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Symbol Parameters Device Value Unit Total Device TSTG Storage Temperature All -40 to 150 C TOPR Operating Temperature All -40 to 85 C Junction Temperature Range All -40 to 100 C Lead Solder Temperature All 260 for 10 seconds C 330 mW 4.4 mW/C TJ TSOL PD Total Device Power Dissipation at 25C Ambient All Derate Above 25C Emitter IF Continuous Forward Current All 60 mA VR Reverse Voltage All 3 V PD Total Power Dissipation at 25C Ambient 100 mW 1.33 mW/C MOC3010M, MOC3011M, MOC3012M 250 V MOC3020M, MOC3021M, MOC3022M, MOC3023M 400 All 1 A 300 mW 4 mW/C All Derate Above 25C Detector VDRM ITSM PD Off-State Output Terminal Voltage Peak Repetitive Surge Current (PW = 100 ms, 120 pps) Total Power Dissipation at 25C Ambient All Derate Above 25C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M ELECTRICAL CHARACTERISTICS TA = 25C unless otherwise specified INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameters Test Conditions Device Min. Typ. Max. Unit Emitter VF Input Forward Voltage IF = 10 mA All 1.15 1.50 V IR Reverse Leakage Current VR = 3 V, TA = 25C All 0.01 100 mA IDRM Peak Blocking Current, Either Direction Rated VDRM, IF = 0(1) All 10 100 nA VTM Peak On-State Voltage, Either Direction ITM = 100 mA peak, IF = 0 All 1.8 3.0 V Typ. Max. Unit 30 mA Detector 1. Test voltage must be applied within dv/dt rating. TRANSFER CHARACTERISTICS Symbol IFT DC Characteristics LED Trigger Current Test Conditions Voltage = 3 V(2) Device Min. MOC3020M MOC3010M 15 MOC3021M MOC3011M 10 MOC3022M MOC3012M 5 MOC3023M IH Holding Current, Either Direction All mA 100 2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (30 mA for MOC3020M, 15 mA for MOC3010M and MOC3021M, 10 mA for MOC3011M and MOC3022M, 5 mA for MOC3012M and MOC3023M) and absolute maximum IF (60 mA). ISOLATION CHARACTERISTICS Symbol VISO Parameters Isolation Voltage (3) Test Conditions t = 1 Minute Device Min. All 4170 Typ. Max. Unit VACRMS 3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M TYPICAL PERFORMANCE CURVES 1.8 800 1.7 ITM - ON-STATE CURRENT (mA) 600 V F - FORWARD VOLTAGE (V) 1.6 1.5 1.4 o TA = -55 C 1.3 o TA = 25 C 1.2 o TA = 100 C 400 200 0 -200 -400 -600 1.1 -800 1.0 1 10 -3 100 -2 -1 Figure 2. LED Forward Voltage vs. Forward Current 2 3 25 IFT - TRIGGER CURRENT (NORMALIZED) ITM - TRIGGER CURRENT (NORMALIZED) 1 Figure 3. On-State Characteristics 1.4 1.3 1.2 1.1 1.0 0.9 0.8 NORMALIZED TO: PWin 100 ms 20 15 10 5 0 0.7 1 2 NORMALIZED TO TA = 25_C -40 -20 0 5 10 20 50 100 PWin - LED TRIGGER WIDTH (ms) 0.6 20 40 60 80 Figure 5. LED Current Required to Trigger vs. LED Pulse Width 100 AMBIENT TEMPERATURE - TA (oC) Figure 4. Trigger Current vs. Ambient Temperature IDRM - LEAKAGE CURRENT (nA) 10000 12 STATIC dv/dt CIRCUIT IN FIGURE 8 10 STATIC dv/dt (V/ms) 0 VTM - ON-STATE VOLTAGE (V) IF - LED FORWARD CURRENT (mA) 8 6 4 1000 100 10 1 2 0 25 30 40 50 60 70 80 90 0.1 100 -40 o -20 0 20 40 60 80 TA - AMBIENT TEMPERATURE ( C) TA - AMBIENT TEMPERATURE ( C) Figure 6. dv/dt vs. Temperature Figure 7. Leakage Current, IDRM vs. Temperature o www.onsemi.com 5 100 MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M 400 V (MOC302X) 250 V (MOC301X) Vdc 1. The mercury wetted relay provides a high speed repeated pulse to the D.U.T. RTEST 2. 100x scope probes are used, to allow high speeds and voltages. R = 10 kW CTEST PULSE INPUT MERCURY WETTED RELAY APPLIED VOLTAGE WAVEFORM 3. The worst-case condition for static dv/dt is established by triggering the DUT with a normal LED input current, then removing the current. The variable R TEST allows the dv/dt to be gradually increased until the DUT continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the DUT stops triggering. t RC is measured at this point and recorded. X100 SCOPE PROBE DUT Vmax = 400 V (MOC302X) = 250 V (MOC301X) 252 V (MOC302X) 158 V (MOC301X) dv/dt = 0 VOLTS 0.63 Vmax RC RC 252 = RC 158 = RC (MOC302X) (MOC301X) Note: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. Figure 8. Static dv/dt Test Circuit RL Rin VCC 1 2 180 W 6 MOC3010M MOC3011M MOC3012M 120 V 60 Hz 5 3 4 Figure 9. Resistive Load ZL VCC Rin 1 2 3 180 W 6 MOC3010M MOC3011M MOC3012M 5 0.1 mF 2.4 kW C1 4 Figure 10. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA) www.onsemi.com 6 120 V 60 Hz MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M ZL Rin VCC 1 2 180 W 6 MOC3010M MOC3011M MOC3012M 3 5 1.2 kW 0.2 mF 120 V 60 Hz C1 4 Figure 11. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA) Rin VCC 1 2 3 6 MOC3020M MOC3021M MOC3022M MOC3023M 360 W 5 470 W HOT 39 0.05 mF 240 VAC 4 0.01 mF LOAD In this circuit the "hot" side of the line is switched and the load connected to the cold or ground side. The 39 W resistor and 0.01 mF capacitor are for snubbing of the triac, and the 470 W resistor and 0.05 mF capacitor are for snubbing the coupler. These components may or may not be necessary depending upon the particular and load used. Figure 12. Typical Application Circuit Reflow Profile 300 260_C 280 260 >245_C = 42 s 240 220 200 180 _C 160 _C = 90 s 140 120 1.822_C/s Ramp-up Rate 100 80 60 40 33 s 20 0 0 60 120 180 Time (s) Figure 13. Reflow Profile www.onsemi.com 7 270 360 GROUND MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M ORDERING INFORMATION Part Number Package Shipping MOC3010M DIP 6-Pin 50 Units / Tube MOC3010SM SMT 6-Pin (Lead Bend) 50 Units / Tube MOC3010SR2M SMT 6-Pin (Lead Bend) 1000 Units / Tape & Reel MOC3010VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option 50 Units / Tube MOC3010SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option 50 Units / Tube MOC3010SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option 1000 Units / Tape & Reel MOC3010TVM DIP 6-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 Option 50 Units / Tube NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, and MOC3023M product families. MARKING INFORMATION ON MOC3010 2 X YY Q 6 V 3 1 5 4 Figure 14. Top Marking Top Mark Definitions 1 ON Semiconductor Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., `5' 5 Two-Digit Work Week, Ranging from `01' to `53' 6 Assembly Package Code www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DATE 31 JUL 2016 DOCUMENT NUMBER: STATUS: 98AON13449G ON SEMICONDUCTOR STANDARD NEW STANDARD: (c) Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 - Rev. 0 http://onsemi.com PDIP6 8.51X6.35, 2.54P 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON13449G PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM FAIRCHILD N06B TO ON SEMICONDUCTOR. REQ. BY I. CAMBALIZA. 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