SSM3K329R
2011-03-04
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K329R
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8-V drive
• Low ON-resistance: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V)
: RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)
: RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 30 V
Gate-source voltage VGSS ±12 V
DC ID (Note 1) 3.5
Drain current
Pulse IDP (Note 1) 7.0
A
PD (Note 2) 1
Power dissipation
t = 10s 2
W
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3Z1A
Weight: 11 mg (typ.)
1: Gate
2: Source
3: Drain
SOT-23F
http://store.iiic.cc/
SSM3K329R
2011-03-04
2
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditions Min Typ. Max Unit
V (BR) DSS ID = 1 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = 1 mA, VGS = −12 V 18 ⎯ ⎯
V
Drain cut-off current IDSS V
DS = 30 V, VGS = 0 V ⎯ ⎯ 1 μA
Gate leakage current IGSS V
GS = ± 12 V, VDS = 0 V ⎯ ⎯ ±1 μA
Gate threshold voltage Vth V
DS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V
Forward transfer admittance ⏐Yfs⏐ V
DS = 3 V, ID = 1.0 A (Note 3) 2.1 4.2 ⎯ S
ID = 1.0 A, VGS = 4.0 V (Note 3) ⎯ 96 126
ID = 0.8 A, VGS = 2.5 V (Note 3) ⎯ 118 170
Drain–source ON-resistance RDS (ON)
ID = 0.5 A, VGS = 1.8 V (Note 3) ⎯ 158 289
mΩ
Input capacitance Ciss ⎯ 123 ⎯
Output capacitance Coss ⎯ 43 ⎯
Reverse transfer capacitance Crss
VDS = 15V, VGS = 0 V, f = 1 MHz
⎯ 18 ⎯
pF
Total gate charge Qg ⎯ 1.5 ⎯
Gate-source charge Qgs1 ⎯ 0.3 ⎯
Gate-drain charge Qgd
VDS = 15V, ID = 2.0 A
VGS = 4 V ⎯ 0.6 ⎯
nC
Turn-on time ton ⎯ 9.2 ⎯
Switching time Turn-off time toff
VDD = 15 V, ID = 1.0 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 6.4 ⎯ ns
Drain-source forward voltage VDSF I
D = -3.5 A, VGS = 0 V (Note 3)
⎯ -0.90
-1.2 V
Note 3: Pulse test
http://store.iiic.cc/
SSM3K329R
2011-03-04
3
Switching Time Test Circuit
Marking Equivalent Circuit
(top view)
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the
SSM3K329R). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
2.5 V
ton t
off
(b) VIN
(c) VOUT
0 V
VDD
VDS (ON) tr t
f
10%
90%
90%
10%
(a) Test Circuit
VDD = 15 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
0
2.5 V IN OUT
VDD
10 μs
RG
KKH
1 2
3
1 2
3
http://store.iiic.cc/
SSM3K329R
2011-03-04
4
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Vth – Ta
Gate threshold voltage Vth (V)
1.0
0
−50 0 15050 100
RDS (ON) – Ta
Drain–source ON-resistance
RDS (ON) (mΩ)
0
−50 0 50 150
200
100
400
Drain–source ON-resistance
RDS (ON) (mΩ)
0
Gate–source voltage VGS (V)
4
0
RDS (ON) – VGS
400
200
12
− 25 °C
Ta = 100 °C
25 °C
0.5
Common Source
VDS = 3 V
ID = 1 mA
Common Source
Pulse test
ID = 0.5 A / VGS = 1.8 V
0.8 A / 2.5 V
300
100
300
100
8
1.0 A / 4.0 V
2 6 10
Drain–source voltage VDS (V)
ID – VDS
Drain current ID (A)
0
6
0 0.2 0.4 0.6
4
10 V
2
4.0 V
VGS = 1.8 V
7
0.8 1.0
2.5 V
Common Source
Ta = 25 °C
Pulse test
5
3
1
Gate–source voltage VGS (V)
ID – VGS
Drain current ID (A)
10
0
1
0.01
0.1
0.001
2.0
− 25 °C
Ta = 100 °C 25 °C
1.0
RDS (ON) – ID
Drain current ID (A)
Drain–source ON-resistance
RDS (ON) (mΩ)
0 1 25
0
400
200
7
300
100
3 4 6
VGS = 4.0V
2.5 V
Common Source
Ta = 25°C
Pulse test
1.8 V
Common Source
VDS = 3 V
Pulse test
1.5 V
ID =1.0A
Common Source
Pulse test
http://store.iiic.cc/
SSM3K329R
2011-03-04
5
Drain–source voltage VDS (V)
C – VDS
Capacitance C (pF)
1
0.1 1 10 100
10
100
30
50
3
5 Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
Drain current ID (A)
Switching time t (ns)
t – ID
1
0.01
100
0.1
1000
1 10
10
tf
ton
tr
Common Source
VDD = 15 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
toff
Ciss
Coss
Crss
500
300
1000
Drain current ID (A)
Forward transfer admittance
⎪
Yfs
⎪
(S)
|Yfs| – ID
0.001
10
0.1
0.01 1
1
0.01
0.001
10
0.1
Common Source
VDS = 3 V
Ta = 25°C
Pulse test
Drain current IDR (A)
Drain–source voltage VDS (V)
IDR – VDS
10
0
0.1
1
0.001
0.01
–0.5 –1.0 –1.5
−25 °C
Ta =100 °C
25 °C
Common Source
VGS = 0 V
Pulse test
G
D
S
IDR
Gate–source voltage VGS (V)
0 0 2
4
8
10
6
2
VDD = 24 V
4 1 3
Common Source
ID = 2.0 A
Ta = 25°C
VDD = 15 V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
http://store.iiic.cc/
SSM3K329R
2011-03-04
6
Pulse width tw (s)
rth – tw
Transient thermal impedance rth (°C/W )
0.001 10000.01 0.1 1 100
10
100
1000
1
10
Single pulse
a. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm2×3)
b
a
Ambient temperature Ta (°C)
PD – Ta
Power dissipation PD (mW)
1600
0
400
120100 140
800
160 80 60 40 20 0 -20 -40
a
1200
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 0.72 mm2 ×3)
b
http://store.iiic.cc/
SSM3K329R
2011-03-04
7
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
http://store.iiic.cc/
