MOC211M, MOC212M, MOC213M Small Ouline Optocouplers Transistor Output Features Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for throughthe-board mounting. UL recognized (File #E90700, Volume 2) VDE recognized (File #136616) (add option `V' for VDE approval, e.g., MOC211VM) Convenient plastic SOIC-8 surface mountable package style Standard SOIC-8 footprint, with 0.050" lead spacing Compatible with dual wave, vapor phase and IR reflow soldering High input-output isolation of 2500 VAC(rms) guaranteed Minimum BVCEO of 30V guaranteed Applications General purpose switching circuits Interfacing and coupling systems of different potentials and impedances Regulation feedback circuits Monitor and detection circuits Schematic ANODE 1 CATHODE 2 8 N/C 7 BASE N/C 3 6 COLLECTOR N/C 4 5 EMITTER (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 www.fairchildsemi.com MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output April 2009 Symbol Rating Value Unit Forward Current - Continuous 60 mA Forward Current - Peak (PW = 100s, 120pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25C Derate above 25C 90 0.8 mW mW/C Collector-Emitter Voltage 30 V VECO Emitter-Collector Voltage 7.0 V VCBO Collector-Base Voltage 70 V IC Collector Current-Continuous 150 mA PD Detector Power Dissipation @ TA = 25C Derate above 25C 150 1.76 mW mW/C Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)(1)(2)(3) 2500 Vac(rms) PD Total Device Power Dissipation @ TA = 25C Derate above 25C 250 2.94 mW mW/C TA Ambient Operating Temperature Range -40 to +100 C Storage Temperature Range -40 to +150 C 260 C EMITTER IF IF (pk) DETECTOR VCEO TOTAL DEVICE VISO Tstg TL Lead Soldering Temperature (1/16" from case, 10 sec. duration) Notes: 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec. (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 www.fairchildsemi.com 2 MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output Absolute Maximum Ratings (TA = 25C Unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Test Conditions Min. Typ.* Max. Unit EMITTER VF Input Forward Voltage IF = 10mA 1.15 1.5 V IR Reverse Leakage Current VR = 6.0V 0.001 100 A CIN Input Capacitance 18 pF DETECTOR ICEO1 ICEO2 1.0 1.0 50 nA A Collector-Emitter Dark Current VCE = 10V, TA = 25C VCE = 10V, TA = 100C BVCEO Collector-Emitter Breakdown Voltage IC = 100A 30 100 V BVECO Emitter-Collector Breakdown Voltage IE = 100A 7.0 10 V CCE Collector-Emitter Capacitance f = 1.0MHz, VCE = 0 7.0 pF COUPLED CTR VISO RISO Collector-Output Current(4) MOC211M MOC212M MOC213M IF = 10mA, VCE = 10V Isolation Surge Voltage(1)(2)(3) f = 60 Hz AC Peak, t = 1 min. Isolation Resistance (2) V = 500V 20 50 100 % 2500 Vac(rms) 10 VCE (sat) Collector-Emitter Saturation Voltage IC = 2.0mA, IF = 10mA Isolation Capacitance(2) V = 0V, f = 1MHz CISO 11 0.4 V 0.2 pF ton Turn-On Time IC = 2.0mA, VCC = 10V, RL = 100 (Fig. 10) 7.5 s toff Turn-Off Time IC = 2.0mA, VCC = 10V, RL = 100 (Fig. 10) 5.7 s tr Rise Time IC = 2.0mA, VCC = 10V, RL = 100 (Fig. 10) 3.2 s tf Fall Time IC = 2.0mA, VCC = 10V, RL = 100 (Fig. 10) 4.7 s *Typical values at TA = 25C Notes: 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 www.fairchildsemi.com 3 MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output Electrical Characteristics (TA = 25C unless otherwise specified) Fig. 2 Output Curent vs. Input Current Fig. 1 LED Forward Voltage vs. Forward Current 1.8 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1.7 VF - FORWARD VOLTAGE (V) 1.6 1.5 1.4 TA = -55C 1.3 1.2 TA = 25C 1.1 TA = 100C 1.0 1 10 100 VCE = 5V NORMALIZED TO IF = 10mA 1 0.1 IF - LED FORWARD CURRENT (mA) 0.01 0.1 1 10 100 IF - LED INPUT CURRENT (mA) Fig. 3 Output Current vs. Ambient Temperature Fig. 4 Output Current vs. Collector-Emitter Voltage 1.6 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1 NORMALIZED TO TA = 25C 0.1 -80 -60 -40 -20 0 20 40 60 80 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I F = 10mA NORMALIZED TO VCE = 5V 0.0 0 120 1 2 3 4 5 6 7 8 9 10 VCE - COLLECTOR-EMITTER VOLTAGE (V) TA - AMBIENT TEMPERATURE (C) Fig. 5 Dark Current vs. Ambient Temperature Fig. 6 CTR vs. RBE (Unsaturated) 10000 0.9 VCE = 10V 1000 IF = 20mA 0.8 0.7 100 NORMALIZED CTR I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.0 10 IF = 10mA 0.6 0.5 IF = 5mA 0.4 0.3 0.2 1 VCE = 5V, TA = 25C Normalized to: CTR at RBE = Open 0.1 0.0 0.1 10 0 20 40 60 80 1000 RBE - BASE RESISTANCE (k) TA - AMBIENT TEMPERATURE (C) (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 100 100 www.fairchildsemi.com 4 MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output Typical Performance Curves Fig. 8 Normalized ton vs. RBE Fig. 7 CTR vs. RBE (Saturated) 1.0 4.0 0.9 3.5 0.8 3.0 0.7 NORMALIZED ton NORMALIZED CTR IF = 20mA IF = 10mA 0.6 0.5 IF = 5mA 0.4 0.3 VCC = 10V IC = 2mA RL = 100 NORMALIZED TO : ton AT RBE = OPEN 2.5 2.0 1.5 1.0 0.2 VCE = 0.3V, TA = 25C Normalized to: CTR at RBE = Open 0.1 0.0 10 0.5 100 0.0 0.01 1000 0.1 1 10 100 RBE - BASE RESISTANCE (M) RBE - BASE RESISTANCE (k) Fig. 9 Normalized toff vs. RBE 1.6 VCC = 10V IC = 2mA 1.4 RL = 100 NORMALIZED TO : tofff AT RBE = OPEN NORMALIZED tofff 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 100 RBE - BASE RESISTANCE (M) TEST CIRCUIT WAVEFORMS VCC = 10V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2mA Figure 10. Switching Time Test Circuit and Waveforms (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 www.fairchildsemi.com 5 MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output Typical Performance Curves (Continued) 8-pin SOIC Surface Mount 8 0.164 (4.16) 0.144 (3.66) SEATING PLANE 1 0.202 (5.13) 0.182 (4.63) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Typ. Lead Coplanarity: 0.004 (0.10) MAX Recommended Pad Layout 0.024 (0.61) 0.060 (1.52) 0.275 (6.99) 0.155 (3.94) 0.050 (1.27) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 www.fairchildsemi.com 6 MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output Package Dimensions MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output Ordering Information Option Order Entry Identifier V V R2 R2 R2V R2V Description VDE 0884 Tape and reel (2500 units per reel) VDE 0884, Tape and reel (2500 units per reel) Marking Information 1 211 V X YY S 3 4 2 6 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 One digit year code, e.g., `8' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 www.fairchildsemi.com 7 8.0 0.10 2.0 0.05 3.50 0.20 0.30 MAX O1.5 MIN 1.75 0.10 4.0 0.10 5.5 0.05 8.3 0.10 5.20 0.20 0.1 MAX 6.40 0.20 12.0 0.3 O1.5 0.1 User Direction of Feed Dimensions in mm (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 www.fairchildsemi.com 8 MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output Carrier Tape Specifications MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output Reflow Profile Temperature (C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3C/S Max. Ramp-down Rate = 6C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150C Temperature Max. (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3C/second max. Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60-150 seconds Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second max. Time 25C to Peak Temperature (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 8 minutes max. www.fairchildsemi.com 9 Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM* (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) (R) FAST FastvCoreTM FETBenchTM FlashWriter(R)* FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM (R) * The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 (c)2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.1 www.fairchildsemi.com 10 MOC211M, MOC212M, MOC213M -- Small Ouline Optocouplers Transistor Output TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.