©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE700/701/702/703
PNP Epitaxial Silicon Darli ngton Tran sistor
Absolute Maximu m Rating s TC=25°C u nless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Sym-
bol Parameter Value Unit
s
VCBO Collector- Base Voltage : MJE700/701
: MJE702/703 - 60
- 80 V
V
VCEO Collector-Emitter Voltage : MJE700/701
: MJE702/703 - 60
- 80 V
V
VEBO Emitter- Base Voltage - 5 V
IC Collector Current - 4 A
IB Base Current - 0.1 A
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG St orage Tem peratur e - 55 ~ 150 °C
Symbol Parame ter Test Cond ition Min. Max. Uni ts
BVCEO
Collector-Emitter Breakdown Vo ltage
: MJE700/701
: MJE702/703
IC = - 10mA, IB = 0 -60
-80 V
V
ICEO
Collector Cut-off Current
: MJE700/701
: MJE702/703
VCE = - 60V, IB = 0
VCE = - 80V, IB = 0 -100
-100 µA
µA
ICBO Collector Cut-off Current VCB = Rated BVCEO, IE = 0
VCB = Rated BVCEO, IE = 0
TC = 100°C
-100
-500
µA
µA
IEBO Emitt e r Cut- o ff Curr e nt VBE = - 5V, IC = 0 -2 mA
hFE DC Current Gain : MJE700/702
: MJE701/703
: ALL DEVICES
VCE = - 3V, IC = - 1.5A
VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 4A
750
750
100
VCE(sat) Collector-Emitter Saturation Voltage
: MJE700/702
: MJE701/703
: ALL DEVICES
IC = - 1.5A, IB = - 30mA
IC = - 2A, IB = - 40mA
IC = - 4A, IB = - 40mA
-2.5
-2.8
-3
V
V
V
VBE(on) Base-Emitter On Voltage
: MJE700/702
: MJE701/703
: ALL DEVICES
VCE = - 3V, IC = - 1.5A
VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 4A
-1.2
-2.5
-3
V
V
V
MJE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC
• Complement to MJE800/801/802/803
R
110
k
Ω≅
R
20.6
k
Ω≅
Equivalent Circuit
B
E
C
R1 R2
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
MJE700/701/702/703
Rev. A1, February 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
I
B
= -400
µ
s
IB= -1000µs
IB= -900µs
IB= -800µs
IB= -700µs
IB= -600µs
IB= -500µs
IB= -300
µ
s
IB= -200µs
IB= -100µs
IC(A),COLLECTOR CURRENT
VCE(V),COLLECTOR-EMITTER VOLTAGE
-0.01 -0.1 -1 -10
10
100
1k
10k VCE = -3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.1
-1
-10
-100
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10 -100
1
10
100
1000
f=0.1MHZ
IE=0
Cob[pF], CAPACI TANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
-0.1
-1
-10
-100
MJE702/703
D.C.
5ms
1ms
MJE700/701
100µs
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE700/701/702/703
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. G
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