BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 38 - 2
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BZT52C2V0 - BZT52C51
SURFACE MOUNT ZENER DIODE
Features
Planar Die Construction
500mW Power Dissipation
General Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOD123
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.010 grams (Approximate)
Ordering Information (Notes 5 & 6)
Part Number
Case
Packaging
(Type Number)-7-F
SOD123
3,000/Tape & Reel
(Type Number)Q-7-F
SOD123
3,000/Tape & Reel
(Type Number)-13-F
SOD123
10,000/Tape & Reel
(Type Number)Q-13-F
SOD123
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com.
6. For (Type Number), please see the Electrical Characteristics Table. Example: 6.2V Zener = BZT52C6V2Q-13-F.
Marking Information
Date Code Key
Year
2013
2014
2015
2016
2017
2020
2021
2022
2023
2024
Code
A
B
C
D
E
H
I
J
K
L
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
xx = Product Type Marking Code
(See Electrical Characteristics Table)
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
SOD123
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 38 - 2
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October 2017
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Forward Voltage @ IF = 10mA
VF
0.9
V
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 7) @TL = +75°C
PD
500
mW
Power Dissipation (Note 8) @TA = +25°C
PD
370
mW
Thermal Resistance, Junction to Ambient Air (Note 8)
RθJA
338
°C/W
Thermal Resistance, Junction to Lead (Note 9)
RθJL
150
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Type
Number
Marking
Codes
Zener Voltage Range
(Note 10)
Maximum Zener
Impedance
f = 1kHz
Maximum
Reverse
Current
(Note 10)
Temperature
Coefficient
@ IZTC
mV/C
Test
Current
IZTC
VZ @ IZT
IZT
ZZT @ IZT
ZZK @ IZK
IZK
IR
@ VR
Nom (V)
Min (V)
Max (V)
mA
mA
uA
V
Min
Max
mA
BZT52C2V0
WY
2.0
1.91
2.09
5
100
600
1.0
150
1.0
-3.5
0
5
BZT52C2V4
WX
2.4
2.2
2.6
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52C2V7
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3
W3
3.3
3.1
3.5
5
95
600
1.0
5.0
1.0
-3.5
0
5
BZT52C3V6
W4
3.6
3.4
3.8
5
90
600
1.0
5.0
1.0
-3.5
0
5
BZT52C3V9
W5
3.9
3.7
4.1
5
90
600
1.0
3.0
1.0
-3.5
0
5
BZT52C4V3
W6
4.3
4.0
4.6
5
90
600
1.0
3.0
1.0
-3.5
0
5
BZT52C4V7
W7
4.7
4.4
5.0
5
80
500
1.0
3.0
2.0
-3.5
0.2
5
BZT52C5V1
W8
5.1
4.8
5.4
5
60
480
1.0
2.0
2.0
-2.7
1.2
5
BZT52C5V6
W9
5.6
5.2
6.0
5
40
400
1.0
1.0
2.0
-2
2.5
5
BZT52C6V2
WA
6.2
5.8
6.6
5
10
150
1.0
3.0
4.0
0.4
3.7
5
BZT52C6V8
WB
6.8
6.4
7.2
5
15
80
1.0
2.0
4.0
1.2
4.5
5
BZT52C7V5
WC
7.5
7.0
7.9
5
15
80
1.0
1.0
5.0
2.5
5.3
5
BZT52C8V2
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
-
5
BZT52C24
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
-
5
BZT52C27
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
-
2
BZT52C30
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
-
2
BZT52C33
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
-
2
BZT52C36
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
-
2
BZT52C39
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
-
2
BZT52C43
WU
43
40.0
46.0
5
100
700
1.0
0.1
32.0
37.6
-
5
BZT52C47
WV
47
44.0
50.0
5
100
750
1.0
0.1
35.0
42.0
-
5
BZT52C51
WW
51
48.0
54.0
5
100
750
1.0
0.1
38.0
46.6
-
5
Notes: 7. RθJL = 132°C/W
8. Device mounted on FR-4 PCB with 1 inch copper pad layout.
9. Thermal Resistance measurement obtained via infrared scan method.
10. Short duration pulse test used to minimize self-heating effect.
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 38 - 2
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BZT52C2V0 - BZT52C51
0
0.1
0.2
0.3
0.4
25050 75 100 125 150
P , POWER DISSIPATION (W)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A°
R = 338°C/W
Note 8
JA
0
5
10
15
20
0 2 4 6 8 10
V , ZENER VOLTAGE (V)
Fig. 2 Typical Zener Breakdown Characteristics
Z
I , ZENER CURRENT (mA)
Z
C2V0
C2V4
C2V7
C3V0
C3V3
C3V6
C3V9 C4V3
C4V7
C5V1
C5V6
C6V2
C6V8
C7V5
0
10
20
30
0
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fig. 3 Typical Zener Breakdown Characteristics
Z
10 20 30 40
T = 25°C
J
Test Current I
5mA Z
Test Current I
2mA Z
C10
C12
C18
C22
C27
C33 C36
C15
0
2
4
6
8
10
10
020 30 40 50 60 70 80 90 100
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fig. 4 Typical Zener Breakdown Characteristics
Z
C , TOTAL CAPACITANCE (pF)
T
10
100
1,000
10 1001 V , NOMINAL ZENER VOLTAGE (V)
Fig. 5 Typical Total Capacitance vs. Nominal Zener Voltage
Z
T = 25 °C
f = 1MHz
J
V = 1V
R
V = 2V
R
V = 1V
R
V = 2V
R
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 38 - 2
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BZT52C2V0 - BZT52C51
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOD123
c
He
E
bD
All 7°
All R0.100
a
L
A
A1
All R0.100
All 7°
SOD123
Dim
Min
Max
Typ
A
1.00
1.35
1.05
A1
0.00
0.10
0.05
b
0.52
0.62
0.57
c
0.10
0.15
0.11
D
1.40
1.70
1.55
E
2.55
2.85
2.65
He
3.55
3.85
3.65
L
0.25
0.40
0.30
a
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOD123
Y
X
X1
Dimensions
Value (in mm)
X
0.900
X1
4.050
Y
0.950
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 38 - 2
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BZT52C2V0 - BZT52C51
IMPORTANT NOTICE
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